SQS460ENW-T1_GE3

SQS460ENW-T1_GE3
Mfr. #:
SQS460ENW-T1_GE3
製造商:
Vishay / Siliconix
描述:
MOSFET 60V Vds -/+20V Vgs AEC-Q101 Qualified
生命週期:
製造商新產品
數據表:
SQS460ENW-T1_GE3 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SQS460ENW-T1_GE3 DatasheetSQS460ENW-T1_GE3 Datasheet (P4-P6)SQS460ENW-T1_GE3 Datasheet (P7-P8)
ECAD Model:
更多信息:
SQS460ENW-T1_GE3 更多信息
產品屬性
屬性值
製造商:
威世
產品分類:
MOSFET
RoHS:
Y
技術:
安裝方式:
貼片/貼片
包裝/案例:
PowerPAK-1212-8W-8
通道數:
1 Channel
晶體管極性:
N通道
Vds - 漏源擊穿電壓:
60 V
Id - 連續漏極電流:
8 A
Rds On - 漏源電阻:
36 mOhms
Vgs th - 柵源閾值電壓:
2 V
Vgs - 柵源電壓:
20 V
Qg - 門電荷:
13 nC
最低工作溫度:
- 55 C
最高工作溫度:
+ 175 C
Pd - 功耗:
39 W
配置:
單身的
資質:
AEC-Q101
打包:
捲軸
系列:
質量
品牌:
威世 / Siliconix
秋季時間:
8 ns
產品類別:
MOSFET
上升時間:
8 ns
出廠包裝數量:
3000
子類別:
MOSFET
典型關斷延遲時間:
19 ns
典型的開啟延遲時間:
5 ns
Tags
SQS460, SQS46, SQS4, SQS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 60V 8A Automotive 8-Pin PowerPAK 1212-W EP T/R
***i-Key
MOSFET N-CH 60V AEC-Q101 1212-8W
***et
N-CHANNEL 60-V (D-S) 175C MOSFET
***ark
Mosfet, N-Ch, Aec-Q101, 60V, 8A; Transistor Polarity:n Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.03Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, AEC-Q101, 60V, 8A; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.03ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:39W; Transistor Case Style:PowerPAK 1212; No. of Pins:8Pins; Operating Temperature Max:175°C; Product Range:TrenchFET Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (07-Jul-2017)
***nell
MOSFET, CA-N, AEC-Q101, 60V, 8A; Polarità Transistor:Canale N; Corrente Continua di Drain Id:8A; Tensione Drain Source Vds:60V; Resistenza di Attivazione Rds(on):0.03ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2V; Dissipazione di Potenza Pd:39W; Modello Case Transistor:PowerPAK 1212; No. di Pin:8Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:TrenchFET Series; Standard di Qualifica Automotive:AEC-Q101; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (07-Jul-2017)
SQ Automotive Power MOSFETs
Vishay / Siliconix SQ Automotive Power MOSFETs are AEC-Q101 qualified that are produced using a special process design that is optimized for use in the automotive industry. These SQ MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. The SQ MOSFETs are available in a wide variety of packages for design flexibility. Packages include the TO-252, TO-262, TO-263, PowerPAK SO-8, D2PAK (TO-263), DPAK, and PowerPAK 1212-8W as well as several space-saving, small-outline options. A full range of polarity options is also available, including N-channel and P-Channel co-packages.
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可用性
庫存:
Available
訂購:
1989
輸入數量:
SQS460ENW-T1_GE3的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
1
US$0.93
US$0.93
10
US$0.75
US$7.46
100
US$0.57
US$56.60
500
US$0.47
US$234.00
1000
US$0.37
US$374.00
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