BGA7H1BN6E6327XTSA1

Mfr. #:: BGA7H1BN6E6327XTSA1
製造商:: Infineon Technologies
描述:: RF Amplifier RF SILICON MMIC
生命週期:: 製造商新產品
數據表:: BGA7H1BN6E6327XTSA1 數據表
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更多信息:: BGA7H1BN6E6327XTSA1 更多信息

產品屬性
屬性值

製造商：: 英飛凌

產品分類：: 射頻放大器

RoHS：: Y

打包：: 捲軸

品牌：: 英飛凌科技

產品類別：: 射頻放大器

出廠包裝數量：: 15000

子類別：: 無線和射頻集成電路

第 # 部分別名：: 7H1BN6 BGA E6327 SP001402778

Tags: BGA7H1B, BGA7H, BGA7, BGA

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BGA7H1BN6E6327XTSA1 描述

***et Europe: RF SILICON MMIC Low Noise Amplifier (LNA) > LTE / 3G LNAs

***ical: Low Noise Amplifier MMICs for mobile cellular systems: UMTS, HSPA/+ and LTE

***ineon: BGA7H1BN6 is a front-end low noise amplifier for LTE which covers a wide frequency range from 1805 MHz to 2690 Mhz and operates from1.5 V to 3.3 V supply voltage. The device features a single-line two-state control (Bypass- and High gain-Mode) and OFF-state can be enabled by powering down Vcc | Summary of Features: Insertion power gain: 12.3 dB; Low noise figure: 0.85 dB; Low current consumption: 4.3 mA; Insertion loss in bypass mode: -3.1 dB; Operating frequencies: 1805 - 2690 MHz; Two-state control: Bypass- and high gain-mode; Supply voltage: 1.5 V to 3.6 V; Digital on/off switch (1V logic high level); Ultra small TSNP-6-2 leadless package (footprint: 0.7 x 1.1 mm2); B7HF Silicon Germanium technology; RF output internally matched to 50 ; Only 1 external SMD component necessary; Pb-free (RoHS compliant) package | Target Applications: LNA for LTE reception in smart phones, feature phones, tablet PCs and RF front-end modules.

BGA7H1BN6E6327XTSA1 更多信息

RF Solutions: Infineon RF Solutions provide RF products for numerous applications with high-performance, cost-effective devices. RF solutions include transistors, low-noise amplifiers, GPS/GLONASS/COMPASS LNA, switches, modules and tuners.

Market price

型號	製造商	描述	庫存	價格
BGA7H1BN6E6327XTSA1 DISTI # BGA7H1BN6E6327XTSA1-ND	Infineon Technologies AG	IC RF AMP LTE 1.805GHZ-2.69GHZ RoHS: Compliant Min Qty: 15000 Container: Tape & Reel (TR)	Temporarily Out of Stock	15000:$0.2145
BGA7H1BN6E6327XTSA1 DISTI # BGA7H1BN6E6327XTSA1	Infineon Technologies AG	RF SILICON MMIC Low Noise Amplifier (LNA) > LTE / 3G LNAs - Tape and Reel (Alt: BGA7H1BN6E6327XTSA1) RoHS: Compliant Min Qty: 15000 Container: Reel	Americas - 0	150000:$0.2089 90000:$0.2129 60000:$0.2199 30000:$0.2289 15000:$0.2369
BGA7H1BN6E6327XTSA1 DISTI # 726-BGA7H1BN6E6327XT	Infineon Technologies AG	RF Amplifier RF SILICON MMIC RoHS: Compliant	0	1:$0.6200 10:$0.5120 100:$0.3300 1000:$0.2640 2500:$0.2230 10000:$0.2150 15000:$0.2070

相關產品

圖片	型號	描述
	Mfr.#: BGA7H1BN6E6327XTSA1 OMO.#: OMO-BGA7H1BN6E6327XTSA1	RF Amplifier RF SILICON MMIC
	Mfr.#: BGA7H1BN6E6327 OMO.#: OMO-BGA7H1BN6E6327-INFINEON-TECHNOLOGIES	全新原裝
	Mfr.#: BGA7H1BN6E6327XTSA1INFIN OMO.#: OMO-BGA7H1BN6E6327XTSA1INFIN-INFINEON-TECHNOLOGIES	全新原裝
	Mfr.#: BGA7H1BN6E6327XTSA1 OMO.#: OMO-BGA7H1BN6E6327XTSA1-INFINEON-TECHNOLOGIES	IC RF AMP LTE 1.805GHZ-2.69GHZ