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S25FL128SDPBHB303

S25FL128SDPBHB303
Mfr. #:
S25FL128SDPBHB303
製造商:
Cypress Semiconductor
描述:
NOR Flash IC 128 Mb FLASH MEMORY
生命週期:
製造商新產品
數據表:
S25FL128SDPBHB303 數據表
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更多信息:
S25FL128SDPBHB303 更多信息 S25FL128SDPBHB303 Product Details
產品屬性
屬性值
製造商：
賽普拉斯半導體
產品分類：
NOR閃存
RoHS：
Y
安裝方式：
貼片/貼片
包裝/案例：
BGA-24
系列：
S25FL128S
內存大小：
128 Mbit
最大時鐘頻率：
66 MHz
接口類型：
SPI
組織：
16 M x 8
計時類型：
異步
數據總線寬度：
8 bit
電源電壓 - 最小值：
2.7 V
電源電壓 - 最大值：
3.6 V
電源電流 - 最大值：
100 mA
最低工作溫度：
- 40 C
最高工作溫度：
+ 105 C
資質：
AEC-Q100
打包：
捲軸
速度：
66 MHz
品牌：
賽普拉斯半導體
濕氣敏感：
是的
產品類別：
NOR閃存
出廠包裝數量：
2500
子類別：
內存和數據存儲
商品名：
鏡像位
Tags
S25FL128SDPBHB, S25FL128SDPB, S25FL128SDP, S25FL128SD, S25FL128S, S25FL128, S25FL12, S25FL1, S25FL, S25F, S25
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
IC 128 MB FLASH MEMORY
S25FL128S NOR Flash Memory Devices
Cypress S25FL128S FL-S NOR is a 2.7V - 3.6V / 1.65V - 3.6V VIO Volt Flash Non-volatile Memory Device using 65nm MirrorBit technology. Designed using the Eclipse architecture with a Page Programming Buffer, the 128-Mb S25FL128S FL-S NOR allows users to program up to 128 words (256 bytes) in one operation, resulting in faster effective programming and erase than prior generation SPI program or erase algorithms. The device connects to a host system via a Serial Peripheral Interface (SPI) and supports traditional SPI single bit serial input and output (Single I/O or SIO), optional two bit (Dual I/O or DIO), and four bit (Quad I/O or QIO) serial commands. As part of the FL-S family, S25FL128S FL-S NOR provides support for Double Data Rate (DDR) read commands for SIO, DIO, and QIO that transfer address and read data on both edges of the clock. Using FL-S devices at the supported higher clock rates with QIO or DDR-QIO commands, the instruction read transfer rate can match or exceed traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. S25FL128S FL-S NOR offers high-density performance capabilities coupled with the flexibility and speed required by a variety of embedded applications. Cypress S25FL128S FL-S NOR is ideal for code shadowing, XIP, and data storage.
S25FL MirroBit Flash Non-Volatile Memory
Cypress S25FL128S / S25FL256S MirroBit® Flash Non-Volatile Memory devices employ MirrorBit technology that stores two data bits in each memory array transistor. These Cypress devices feature 65nm process lithography as well as Eclipse architecture that dramatically improves program and erase performance. S25FL128S and S25FL256S Flash Non-Volatile Memory devices offer high densities coupled with the flexibility and fast performance required by a variety of embedded applications. They are ideal for code shadowing, XIP, and data storage.
S25FLxS FL-S NOR Flash Memory Devices
Cypress S25FLxS FL-S NOR Flash Memory Devices are 2.7V-3.6V or 1.65V-3.6V VIO Volt Flash Non-volatile Memory Devices. The S25FLxS FL-S NOR Flash Memory Devices use 65nm MirrorBit® technology. Featuring the Eclipse™ architecture with a Page Programming Buffer, 256-Mb S25FLxS FL-S NOR allows users to program up to 256-words. This results in faster effective programming and erase than prior generation SPI program or erase algorithms. The devices connect to a host system via an SPI and support traditional SPI single bit serial input and output.The S25FLxS FL-S NOR provides support for Double Data Rate read commands for SIO, DIO, and QIO. The S25FLxS FL-S NOR transfer address and read data on both edges of the clock. Using FL-S devices at the supported higher clock rates with QIO or DDR-QIO commands. The S25FLxS NOR instruction read transfer rate can match a traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. S25FLxS FL-S NOR offers high-density performance capabilities coupled with the flexibility and speed required by a variety of embedded applications. S25FLxS FL-S NOR memory devices are ideal for code shadowing, XIP, and data storage.
型號 製造商 描述 庫存 價格
S25FL128SDPBHB303
DISTI # S25FL128SDPBHB303-ND		Cypress SemiconductorIC 128 MB FLASH MEMORY
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2500:$2.9730
S25FL128SDPBHB303
DISTI # 47AC6072		Cypress SemiconductorS25FL128SDPBHB3030
  • 30000:$2.4000
  • 18000:$2.4400
  • 12000:$2.5400
  • 6000:$2.7300
  • 3000:$2.9300
  • 1:$3.0700
S25FL128SDPBHB303
DISTI # 727-S25FL128SDPHB303		Cypress SemiconductorNOR Flash IC 128 Mb FLASH MEMORY
RoHS: Compliant		0
  • 2500:$2.5900
圖片 型號 描述
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OMO.#: OMO-S25FL128SDSNFI000-CYPRESS-SEMICONDUCTOR

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S25FL128SAIH30

Mfr.#: S25FL128SAIH30

OMO.#: OMO-S25FL128SAIH30-1190

 全新原裝
可用性
庫存:
Available
訂購:
4000
輸入數量:
S25FL128SDPBHB303的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
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