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| 型號 | 製造商 | 描述 | 庫存 | 價格 |
|---|---|---|---|---|
| IRG4BC30KDPBF DISTI # V36:1790_13892392 | Infineon Technologies AG | Trans IGBT Chip N-CH 600V 28A 3-Pin(3+Tab) TO-220AB Tube | 1456 |
|
| IRG4BC30KDPBF DISTI # V99:2348_13892392 | Infineon Technologies AG | Trans IGBT Chip N-CH 600V 28A 3-Pin(3+Tab) TO-220AB Tube | 349 |
|
| IRG4BC30KDPBF DISTI # IRG4BC30KDPBF-ND | Infineon Technologies AG | IGBT 600V 28A 100W TO220AB RoHS: Compliant Min Qty: 1000 Container: Tube | Limited Supply - Call |
|
| IRG4BC30KDPBF DISTI # 26194547 | Infineon Technologies AG | Trans IGBT Chip N-CH 600V 28A 3-Pin(3+Tab) TO-220AB Tube | 1456 |
|
| IRG4BC30KDPBF DISTI # 30701753 | Infineon Technologies AG | Trans IGBT Chip N-CH 600V 28A 3-Pin(3+Tab) TO-220AB Tube | 1022 |
|
| IRG4BC30KDPBF DISTI # 26198378 | Infineon Technologies AG | Trans IGBT Chip N-CH 600V 28A 3-Pin(3+Tab) TO-220AB Tube | 349 |
|
| IRG4BC30KDPBF DISTI # IRG4BC30KDPBF | Infineon Technologies AG | Trans IGBT Chip N-CH 600V 28A 3-Pin(3+Tab) TO-220AB - Bulk (Alt: IRG4BC30KDPBF) RoHS: Compliant Min Qty: 220 Container: Bulk | Americas - 0 |
|
| IRG4BC30KDPBF DISTI # 63J7487 | Infineon Technologies AG | SINGLE IGBT, 600V, 28A,DC Collector Current:28A,Collector Emitter Saturation Voltage Vce(on):2.88V,Power Dissipation Pd:100W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes | 17 |
|
| IRG4BC30KDPBF DISTI # 70017507 | Infineon Technologies AG | 600V ULTRAFAST 8-25 KHZ COPACK IGBT IN A TO-220AB PACKAGE RoHS: Compliant | 92 |
|
| IRG4BC30KDPBF DISTI # 942-IRG4BC30KDPBF | Infineon Technologies AG | IGBT Transistors 600V UltraFast 8-25kHz RoHS: Compliant | 437 |
|
| IRG4BC30KDPBF | International Rectifier | Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, TO-220AB RoHS: Compliant | 2175 |
|
| IRG4BC30KDPBF DISTI # 5430153 | Infineon Technologies AG | TRANSISTOR IGBT N-CH 600V 28A TO220AB, EA | 307 |
|
| IRG4BC30KDPBF DISTI # 5430153P | Infineon Technologies AG | TRANSISTOR IGBT N-CH 600V 28A TO220AB, TU | 544 |
|
| IRG4BC30KDPBF DISTI # IRG4BC30KDPBF | Infineon Technologies AG | Transistor: IGBT,600V,28A,100W,TO220AB | 64 |
|
| IRG4BC30KDPBF DISTI # 8650390 | Infineon Technologies AG | IGBT, 600V, 28A, TO-220 RoHS: Compliant | 684 |
|
| IRG4BC30KDPBF DISTI # 8650390 | Infineon Technologies AG | IGBT, 600V, 28A, TO-220 | 675 |
|
| IRG4BC30KDPBF DISTI # XSKDRABV0021546 | Infineon Technologies AG | Power Field-Effect Transistor,120AI(D),75V,0.0041ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET,TO-263AB RoHS: Compliant | 1000 in Stock0 on Order |
|
| 圖片 | 型號 | 描述 |
|---|---|---|
|
Mfr.#: IRG4BC30KDPBF OMO.#: OMO-IRG4BC30KDPBF |
IGBT Transistors 600V UltraFast 8-25kHz |
|
Mfr.#: IRG4BC30KDPBF |
IGBT Transistors 600V UltraFast 8-25kHz |
|
Mfr.#: IRG4BC30KDPBF,IRG4BC30KD |
全新原裝 |
|
|
Mfr.#: IRG4BC30KDPBF. OMO.#: OMO-IRG4BC30KDPBF--1190 |
全新原裝 |