FZ600R12KE3

Mfr. #:: FZ600R12KE3
製造商:: Infineon Technologies
描述:: IGBT Modules 1200V 600A SINGLE
生命週期:: 製造商新產品
數據表:: FZ600R12KE3 數據表
交貨:: DHL FedEx Ups TNT EMS
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ECAD Model:

產品屬性
屬性值

製造商: 英飛凌/歐盟

產品分類: 集成電路芯片

產品: IGBT 矽模塊

安裝方式: 擰緊

包裝盒: 62 mm

配置: 單身的

鈀功耗: 2800 W

最高工作溫度: + 125 C

最低工作溫度: - 40 C

集電極-發射極-電壓-VCEO-Max: 1200 V

集電極-發射極-飽和-電壓: 1.7 V

25-C 時的連續集電極電流: 900 A

柵極-發射極-漏電流: 400 nA

最大柵極發射極電壓: +/- 20 V

Tags: FZ600R12KE3, FZ600R12KE, FZ600R12, FZ600R1, FZ600, FZ60, FZ6

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FZ600R12KE3 描述

***ser: IGBT - Standard Modules 1200V,600A,SINGLE

***omponent: IGBT Modules 1200V 600A SINGLE

***nell: IGBT MODULE, 1200V; Transistor type:Single IGBT; Voltage, Vces:1200V; Current, Ic continuous a max:600A; Voltage, Vce sat max:2.15V; Power dissipation:2800W; Case style:Custom; Current, Icm pulsed:1200A; Power, Pd:2800W; Temperature, current:80°C; Temperature, full power rating:25°C; Termination Type:Screw; Time, rise:90ns; Voltage, Vce sat typ:1.7V; Voltage, Vceo:1200V

Market price

型號	製造商	描述	庫存	價格
FZ600R12KE3HOSA1 DISTI # FZ600R12KE3HOSA1-ND	Infineon Technologies AG	IGBT MODULE 1200V 600A RoHS: Compliant Min Qty: 1 Container: Bulk	65In Stock	1:$139.6900
FZ600R12KE3 DISTI # FZ600R12KE3	Infineon Technologies AG	Trans IGBT Module N-CH 1.2KV 900A 4-pin 62MM-2 (Alt: FZ600R12KE3) RoHS: Compliant Min Qty: 10	Asia - 0
FZ600R12KE3 DISTI # SP000100724	Infineon Technologies AG	Trans IGBT Module N-CH 1.2KV 900A 4-pin 62MM-2 (Alt: SP000100724) RoHS: Compliant Min Qty: 1	Europe - 0	1:€123.1900 10:€119.4900 25:€118.1900 50:€112.2900 100:€110.3900 500:€109.0900 1000:€107.5900
FZ600R12KE3HOSA1 DISTI # FZ600R12KE3HOSA1	Infineon Technologies AG	MEDIUM POWER 62MM - Trays (Alt: FZ600R12KE3HOSA1) RoHS: Compliant Min Qty: 10 Container: Tray	Americas - 0	10:$129.4900 20:$124.7900 40:$120.2900 60:$116.1900 100:$114.1900
FZ600R12KE3 DISTI # 641-FZ600R12KE3	Infineon Technologies AG	IGBT Modules 1200V 600A SINGLE RoHS: Compliant	110	1:$137.5300 5:$134.8300 10:$128.5400 25:$125.8400
FZ600R12KE3S DISTI # 641-FZ600R12KE3S	Infineon Technologies AG	IGBT Transistors 1200V 600A SINGLE RoHS: Not compliant	0
FZ600R12KE3B1 DISTI # 641-FZ600R12KE3B1	Infineon Technologies AG	IGBT Modules N-CH 1.2KV 900A	0
FZ600R12KE3HOSA1	Infineon Technologies AG	Insulated Gate Bipolar Transistor, 900A I(C), 1200V V(BR)CES, N-Channel RoHS: Compliant	1	1000:$99.4700 500:$104.7100 100:$109.0100 25:$113.6800 1:$122.4300
FZ600R12KE3HOSA1 DISTI # 2726202	Infineon Technologies AG	TRANSISTOR, IGBT MODULE, 1.2KV, 900A RoHS: Compliant	11	10:£105.0000 5:£107.0000 1:£109.0000
FZ600R12KE3 DISTI # 1496961	Infineon Technologies AG	RoHS: Compliant	0	1:$247.6800
FZ600R12KE3HOSA1 DISTI # 2726202	Infineon Technologies AG	TRANSISTOR, IGBT MODULE, 1.2KV, 900A RoHS: Compliant	11	1:$221.0400

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