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| 型號 | 製造商 | 描述 | 庫存 | 價格 |
|---|---|---|---|---|
| SI6473DQ-T1-E3 DISTI # SI6473DQ-T1-E3-ND | Vishay Siliconix | MOSFET P-CH 20V 6.2A 8-TSSOP RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| SI6473DQ-T1-GE3 DISTI # SI6473DQ-T1-GE3-ND | Vishay Siliconix | MOSFET P-CH 20V 6.2A 8-TSSOP RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| SI6473DQ-T1-E3 DISTI # 70026253 | Vishay Siliconix | MOSFET,TSSOP8 20V P-CH 2.5V (GS) Rated RoHS: Compliant | 0 |
|
| SI6473DQ-T1-GE3 DISTI # 781-SI6473DQ-GE3 | Vishay Intertechnologies | MOSFET RECOMMENDED ALT 78-SIS407ADN-T1-GE3 RoHS: Compliant | 0 | |
| SI6473DQ-T1-E3 DISTI # 781-SI6473DQ-E3 | Vishay Intertechnologies | MOSFET RECOMMENDED ALT 78-SIS407ADN-T1-GE3 RoHS: Compliant | 0 | |
| SI6473DQ | Vishay Siliconix | 6200 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET | 49 |
|
| SI6473DQ-T1 | Vishay Siliconix | 6200MA, 20V, P-CHANNEL, SI, SMALL SIGNAL, MOSFET | 2275 |
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| 圖片 | 型號 | 描述 |
|---|---|---|
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Mfr.#: SI6433BDQ-T1-GE3 OMO.#: OMO-SI6433BDQ-T1-GE3-VISHAY |
IGBT Transistors MOSFET 12V 4.8A 1.5W 40mohm @ 4.5V |
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Mfr.#: SI6463BDQ-T1-GE3 OMO.#: OMO-SI6463BDQ-T1-GE3-VISHAY |
IGBT Transistors MOSFET 20V 7.4A 1.5W 15mohm @ 4.5V |
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Mfr.#: SI6433DQ-T1 OMO.#: OMO-SI6433DQ-T1-1190 |
MOSFET 12V 4A 1.5W |
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Mfr.#: SI6447DQ-T1 OMO.#: OMO-SI6447DQ-T1-1190 |
MOSFET RECOMMENDED ALT 78-SI7619DN-T1-GE3 |
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Mfr.#: SI6459BDQ OMO.#: OMO-SI6459BDQ-1190 |
全新原裝 |
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Mfr.#: SI6463DQ OMO.#: OMO-SI6463DQ-1190 |
Small Signal Field-Effect Transistor, 8.8A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET |
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Mfr.#: SI6463DQT1 OMO.#: OMO-SI6463DQT1-1190 |
6.5 A, 20 V, 0.02 ohm, P-CHANNEL, Si, POWER, MOSFET (Also Known As: SI6463DQ-T1) |
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Mfr.#: SI6466DQ.. OMO.#: OMO-SI6466DQ--1190 |
全新原裝 |
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Mfr.#: SI6467BDQ-T1 OMO.#: OMO-SI6467BDQ-T1-1190 |
MOSFET RECOMMENDED ALT 78-SIS407ADN-T1-GE3 |
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Mfr.#: SI6467DY-T1 OMO.#: OMO-SI6467DY-T1-1190 |
全新原裝 |