BSZ050N03MSGATMA1

Mfr. #:: BSZ050N03MSGATMA1
製造商:: Infineon Technologies
描述:: MOSFET N-CH 30V 40A TSDSON-8
生命週期:: 製造商新產品
數據表:: BSZ050N03MSGATMA1 數據表
交貨:: DHL FedEx Ups TNT EMS
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ECAD Model:

產品屬性
屬性值

Tags: BSZ050N03MSG, BSZ050N03MS, BSZ050N03M, BSZ050N, BSZ050, BSZ05, BSZ0, BSZ

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSZ050N03MSGATMA1 描述

***Components: In a Pack of 25, N-Channel MOSFET, 40 A, 30 V, 8-Pin TSDSON Infineon BSZ050N03MSGATMA1

***ure Electronics: Single N-Channel 30 V 4.5 mOhm 34 nC OptiMOS Power Mosfet - TSDSON-8

***ical: Trans MOSFET N-CH 30V 15A 8-Pin TSDSON EP T/R

***et Europe: Trans MOSFET N-CH 30V 15A 8-Pin TSDSON T/R

***an P&S: 30V,40A,N Channel Power MOSFET

***i-Key: MOSFET N-CH 30V 40A TSDSON-8

***ronik: N-CH 30V 40A 5mOhm S3O8

***ark: MOSFET, N CH, 40A, 30V, PG-TSDSON-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):3.8mohm; Rds(on) Test Voltage Vgs:10V; Operating Temperature Range:-55°C to +150°C; Transistor Case ;RoHS Compliant: Yes

***nell: MOSFET, N CH, 40A, 30V, PG-TSDSON-8; Transistor Polarity:N; Current Id Max:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):3.8mohm; Rds(on) Test Voltage Vgs:10V; Voltage Vgs Max:20V; Power Dissipation:48W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON-8; No. of Pins:8; Transistor Type:Power MOSFET

***ment14 APAC: MOSFET, N CH, 40A, 30V, PG-TSDSON-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):3.8mohm; Rds(on) Test Voltage Vgs:10V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; Current Id Max:40A; Power Dissipation Pd:48W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ineon: With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED

Market price

型號	製造商	描述	庫存	價格
BSZ050N03MSGATMA1 DISTI # V72:2272_06390906	Infineon Technologies AG	Trans MOSFET N-CH 30V 15A 8-Pin TSDSON EP T/R RoHS: Compliant	5790	3000:$0.3807 1000:$0.3847 500:$0.4849 250:$0.6180 100:$0.6243 25:$0.8192 10:$0.9101 1:$1.0379
BSZ050N03MSGATMA1 DISTI # V36:1790_06390906	Infineon Technologies AG	Trans MOSFET N-CH 30V 15A 8-Pin TSDSON EP T/R RoHS: Compliant	0	5000000:$0.2767 2500000:$0.2769 500000:$0.2968 50000:$0.3310 5000:$0.3367
BSZ050N03MSGATMA1 DISTI # BSZ050N03MSGATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 30V 40A TSDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	619In Stock	1000:$0.4110 500:$0.5137 100:$0.6499 10:$0.8480 1:$0.9600
BSZ050N03MSGATMA1 DISTI # BSZ050N03MSGATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 30V 40A TSDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	619In Stock	1000:$0.4110 500:$0.5137 100:$0.6499 10:$0.8480 1:$0.9600
BSZ050N03MSGATMA1 DISTI # BSZ050N03MSGATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 30V 40A TSDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	Temporarily Out of Stock	25000:$0.3159 10000:$0.3242 5000:$0.3367
BSZ050N03MSGATMA1 DISTI # 33953428	Infineon Technologies AG	Trans MOSFET N-CH 30V 15A 8-Pin TSDSON EP T/R RoHS: Compliant	510000	5000:$0.3059
BSZ050N03MSGATMA1 DISTI # 26195659	Infineon Technologies AG	Trans MOSFET N-CH 30V 15A 8-Pin TSDSON EP T/R RoHS: Compliant	5790	24:$1.0379
BSZ050N03MSGATMA1 DISTI # 32825626	Infineon Technologies AG	Trans MOSFET N-CH 30V 15A 8-Pin TSDSON EP T/R RoHS: Compliant	5000	5000:$0.2485
BSZ050N03MSGATMA1 DISTI # BSZ050N03MSGATMA1	Infineon Technologies AG	MOSFET N-CH 30V 40A TSDSON-8 - Bulk (Alt: BSZ050N03MSGATMA1) RoHS: Compliant Min Qty: 1389 Container: Bulk	Americas - 0	13890:$0.2279 6945:$0.2319 4167:$0.2399 2778:$0.2499 1389:$0.2589
BSZ050N03MSGATMA1 DISTI # BSZ050N03MSGATMA1	Infineon Technologies AG	MOSFET N-CH 30V 40A TSDSON-8 - Tape and Reel (Alt: BSZ050N03MSGATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	50000:$0.2409 30000:$0.2449 20000:$0.2539 10000:$0.2629 5000:$0.2729
BSZ050N03MSGATMA1 DISTI # SP000311518	Infineon Technologies AG	MOSFET N-CH 30V 40A TSDSON-8 (Alt: SP000311518) RoHS: Compliant Min Qty: 5000	Europe - 0	50000:€0.2359 30000:€0.2539 20000:€0.2749 10000:€0.2999 5000:€0.3669
BSZ050N03MS G DISTI # 726-BSZ050N03MSG	Infineon Technologies AG	MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M RoHS: Compliant	4082	1:$0.8800 10:$0.7370 100:$0.4750 1000:$0.3800 5000:$0.3210 10000:$0.3090 25000:$0.2970
BSZ050N03MSGATMA1	Infineon Technologies AG	Power Field-Effect Transistor, 40A I(D), 30V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	5000	1000:$0.2400 500:$0.2500 100:$0.2600 25:$0.2700 1:$0.2900
BSZ050N03MSGATMA1 DISTI # 8275246P	Infineon Technologies AG	MOSFET N-CH 15A 30V OPTIMOS3 TSDSON8EP, RL	1650	1250:£0.3140 500:£0.3520 125:£0.3910

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