IXYH20N120C3

Mfr. #:: IXYH20N120C3
製造商:: Littelfuse
描述:: IGBT Transistors GenX3 1200V XPT IGBT
生命週期:: 製造商新產品
數據表:: IXYH20N120C3 數據表
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HTML Datasheet:: IXYH20N120C3 Datasheet IXYH20N120C3 Datasheet (P4-P6)
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更多信息:: IXYH20N120C3 更多信息

產品屬性
屬性值

製造商：: IXYS

產品分類：: IGBT晶體管

技術：: 矽

包裝/案例：: TO-247AD-3

安裝方式：: 通孔

配置：: 單身的

集電極-發射極電壓 VCEO 最大值：: 1200 V

集電極-發射極飽和電壓：: 4 V

最大柵極發射極電壓：: 30 V

25 C 時的連續集電極電流：: 40 A

Pd - 功耗：: 278 W

最低工作溫度：: - 55 C

最高工作溫度：: + 175 C

系列：: IXYH20N120

打包：: 管子

連續集電極電流 Ic 最大值：: 40 A

品牌：: IXYS

柵極-發射極漏電流：: 100 nA

產品類別：: IGBT晶體管

出廠包裝數量：: 30

子類別：: IGBT

商品名：: XPT

單位重量：: 1.340411 oz

Tags: IXYH20, IXYH2, IXYH, IXY

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IXYH20N120C3 描述

***i-Key: IGBT 1200V 40A 278W TO-247AD

***ure Electronics: IGBT Transistors GenX3 1200V XPT IGBT

***(Formerly Allied Electronics): Transistor; IGBT; TO-247AC; 45 A (Max.); 1200 V (Min.); 200 W (Max.); -55 degC

***p One Stop Global: Trans IGBT Chip N-CH 1200V 45A 200000mW 3-Pin(3+Tab) TO-247AC Tube

***ure Electronics: IRG4PH50U Series N-Channel 1.2 kV 45 A Ultrafast Speed IGBT - TO-247AC

***trelec: IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 1200 V Collector-emitter saturation voltage: 2.78 V Current release time: 280 ns Power dissipation: 200 W

***ment14 APAC: SINGLE IGBT, 1.2KV, 45A; Transistor Type; Transistor Type:IGBT; DC Collector Current:45A; Collector Emitter Voltage Vces:3.7V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Ic Continuous a Max:45A; Current Temperature:25°C; Fall Time Max:500ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:180A; Rise Time:15ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV

***ical: Trans IGBT Chip N-CH 1200V 45A 200000mW 3-Pin(3+Tab) TO-247AC Tube

***eco: Transistor IGBT Chip Negative Channel 1.2K Volt 45A 3-Pin(3+Tab) TO-247AC

***ineon SCT: 1200V UltraFast 5-40 kHz Copack IGBT in a TO-247AC package, TO247COPAK-3, RoHS

***ure Electronics: IRG4PH50U series 1200 V 45 A Through Hole N-Channel UltraFast IGBT - TO-247AC

***trelec: IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 1200 V Collector-emitter saturation voltage: 2.56 V Current release time: 180 ns Power dissipation: 200 W

***nell: IGBT, 1200V, 45A, TO-247AC; Transistor Type:IGBT; Transistor Polarity:N Channel; Voltage, Vces:1200V; Current Ic Continuous a Max:45A; Voltage, Vce Sat Max:3.7V; Power Dissipation:200W; Case Style:TO-247AC; Termination Type:Through Hole; Collector-to-Emitter Breakdown Voltage:1200V; Current, Icm Pulsed:180A; No. of Pins:3; Power, Pd:200W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall Max:260ns; Time, Rise:24ns; Transistors, No. of:1

***ical: Trans IGBT Chip N-CH 1200V 45A 200000mW 3-Pin(3+Tab) TO-247AC Tube

***ineon SCT: 1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package, TO247-3, RoHS

***trelec: IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 1200 V Collector-emitter saturation voltage: 3.5 V Current release time: 280 ns Power dissipation: 200 W

***nell: IGBT, 1.2KV, 45A, TO-247AC-3; DC Collector Current: 45A; Collector Emitter Saturation Voltage Vce(on): 3.28V; Power Dissipation Pd: 200W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247AC; No. of Pins

***ure Electronics: FGA20N120FTD Series 1200 V 40 A Field Stop Trench IGBT-TO-3PN

***ow.cn: Trans IGBT Chip N-CH 1200V 40A 298000mW 3-Pin(3+Tab) TO-3P Tube

***emi: IGBT, 1200V, 20A, Field Stop Trench

***ark: Igbt, 1.2Kv, 40A, 150Deg C, 298W Rohs Compliant: Yes

***r Electronics: Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel

*** Electronic Components: IGBT Transistors 1200V N-Chan Trench

***rchild Semiconductor: Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche ruggedness. This device is designed for induction heating and microwave oven.

***ical: Trans IGBT Chip N-CH 1200V 30A 333000mW 3-Pin(3+Tab) TO-247 Tube

*** Stop Electro: Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, TO-247AB

***emi: IGBT, 1200V, 15A, Field Stop Trench

***ark: RAIL/1200V 15A FS2 Trench IGBT

***el Electronic: IC REG LINEAR 24V 500MA TO252-3

***rchild Semiconductor: Using innovative field stop trench IGBT technology, Fairchild’s new series of field stop trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications.

***ical: Trans IGBT Chip N-CH 1200V 40A 180000mW 3-Pin(3+Tab) TO-247

***i-Key: IGBT 1200V 40A 180W TO247

***el Nordic: Contact for details

***ment14 APAC: IGBT,1200V,20A,TO-247; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:2.5V; Power Dissipation Pd:180W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +150°C; Power Dissipation Max:180W

IXYH20N120C3 更多信息

1200V XPT High Speed IGBTs: IXYS 1200V XPT™ High Speed IGBTs are high speed, high-gain 1200V Insulated Gate Bipolar Transistor products. The 1200V XPT™ High Speed IGBTs feature high current ratings (105A - 160A, Tc = 25 degrees Centigrade) and are specifically optimized for reduced switching losses in high voltage applications that require hard-switching frequencies of up to 50 kHz. IXYS's 1200V XPT™ High Speed IGBTs have high-speed switching capabilities that allow customers to boost the power conversion efficiency of their designs and to use smaller, lighter and more cost-effective passive components. The resultant effect is a reduction in total system cost of ownership for these 1200V XPT™ High Speed IGBTs and a reduced PCB layout area.Learn More

Electrical Vehicle DC Fast Chargers: DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

Market price

型號	製造商	描述	庫存	價格
IXYH20N120C3D1 DISTI # 29499152	IXYS Corporation	Trans IGBT Chip N-CH 1.2KV 36A Automotive 3-Pin(3+Tab) TO-247AD RoHS: Compliant	120	500:$6.4613 250:$7.0862 100:$7.4189 50:$7.9834 25:$8.5378 10:$8.9510 2:$9.9086
IXYH20N120C3D1 DISTI # IXYH20N120C3D1-ND	IXYS Corporation	IGBT 1200V 36A 230W TO-247AD RoHS: Compliant Min Qty: 1 Container: Tube	60In Stock	510:$6.7216 270:$7.3720 120:$8.0225 30:$8.8897 10:$9.7570 1:$10.8400
IXYH20N120C3 DISTI # IXYH20N120C3-ND	IXYS Corporation	IGBT 1200V 40A 278W TO-247AD RoHS: Compliant Min Qty: 30 Container: Tube	Temporarily Out of Stock	30:$5.3867
IXYH20N120C3D1 DISTI # C1S331700091707	IXYS Corporation	Trans IGBT Chip N-CH 1200V 36A 230000mW Automotive 3-Pin(3+Tab) TO-247AD RoHS: Compliant	120	100:$7.2100 50:$9.4200 10:$10.2000 5:$12.4000 1:$14.0000
IXYH20N120C3 DISTI # 747-IXYH20N120C3	IXYS Corporation	IGBT Transistors GenX3 1200V XPT IGBT	0	30:$5.3900 60:$5.1300 120:$5.0600 270:$4.5600 510:$3.5900 1020:$3.3500
IXYH20N120C3D1 DISTI # 747-IXYH20N120C3D1	IXYS Corporation	IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT RoHS: Compliant	31	1:$10.8400 10:$9.7600 25:$8.8900 50:$8.1200 100:$8.0200 250:$7.3100 500:$6.7200 1000:$5.8600
IXYH20N120C3 DISTI # 8080265P	IXYS Corporation	IGBT N-CH 1200V 20A XPT GENX3 TO247AD, TU	64	10:£4.1100 20:£3.9900 60:£3.8650 180:£3.3500
IXYH20N120C3D1 DISTI # 8080269P	IXYS Corporation	IGBT 1200V 17A XPT GENX3 W/DIODE TO247AD, TU	42	5:£7.7300 10:£7.3300 30:£6.6700 90:£6.3500
IXYH20N120C3 DISTI # IXYH20N120C3	IXYS Corporation	1200V 40A 278W TO247AD RoHS: Compliant	13	1:€7.0000 5:€4.0000 30:€3.0000 60:€2.9000
IXYH20N120C3D1 DISTI # 2782977	IXYS Corporation	IGBT, SINGLE, 1.2KV, 36A, TO-247AD RoHS: Compliant	16	1:$14.0000 5:$13.0900 10:$11.5800 50:$10.9500 100:$10.3800 250:$9.8700
IXYH20N120C3D1 DISTI # 2782977	IXYS Corporation	IGBT, SINGLE, 1.2KV, 36A, TO-247AD RoHS: Compliant	16	1:£8.7600 5:£8.2000 10:£6.7300 50:£6.1400 100:£6.0700
IXYH20N120C3 DISTI # XSFP00000104374	IXYS Corporation	RoHS: Compliant	404	30:$4.9600 404:$4.6500