IPI086N10N3 G

Mfr. #:: IPI086N10N3 G
製造商:: Infineon Technologies
描述:: Darlington Transistors MOSFET N-Ch 100V 80A I2PAK-3 OptiMOS 3
生命週期:: 製造商新產品
數據表:: IPI086N10N3 G 數據表
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ECAD Model:

產品屬性
屬性值

製造商: 英飛凌科技

產品分類: 晶體管 - FET、MOSFET - 單

系列: OptiMOS 3

打包: 管子

部分別名: IPI086N10N3GXK IPI086N10N3GXKSA1 SP000683070

單位重量: 0.073511 oz

商品名: 優化MOS

包裝盒: TO-262-3

技術: 矽

通道數: 1 Channel

配置: 單身的

晶體管型: 1 N-Channel

鈀功耗: 125 W

最高工作溫度: + 175 C

最低工作溫度: - 55 C

秋季時間: 8 ns

上升時間: 42 ns

VGS-柵極-源極-電壓: 20 V

Id 連續漏極電流: 80 A

Vds-漏-源-擊穿電壓: 100 V

Rds-On-Drain-Source-Resistance: 8.2 mOhms

晶體管極性: N通道

典型關斷延遲時間: 31 ns

典型開啟延遲時間: 18 ns

通道模式: 增強

Tags: IPI086N10N3G, IPI086N10N3, IPI086, IPI08, IPI0, IPI

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

Market price

型號	製造商	描述	庫存	價格
IPI086N10N3GXKSA1 DISTI # IPI086N10N3GXKSA1-ND	Infineon Technologies AG	MOSFET N-CH 100V 80A TO262-3 RoHS: Compliant Min Qty: 1 Container: Tube	609In Stock	1000:$0.7219 500:$0.9144 100:$1.1791 10:$1.4920 1:$1.6800
IPI086N10N3GXK DISTI # IPI086N10N3GXKSA1	Infineon Technologies AG	Trans MOSFET N-CH 100V 80A 3-Pin(3+Tab) TO-262 - Rail/Tube (Alt: IPI086N10N3GXKSA1) RoHS: Compliant Min Qty: 1000 Container: Tube	Americas - 1000	1000:$0.5039 2000:$0.4859 3000:$0.4679 5000:$0.4519 10000:$0.4439
IPI086N10N3G DISTI # SP000683070	Infineon Technologies AG	Trans MOSFET N-CH 100V 80A 3-Pin TO-262 Tube (Alt: SP000683070) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	1:€0.9089 10:€0.7089 25:€0.6329 50:€0.5759 100:€0.5589 500:€0.5479 1000:€0.5399
IPI086N10N3GXKSA1 DISTI # 34AC1700	Infineon Technologies AG	MOSFET, N-CH, 100V, 80A, TO-262,Transistor Polarity:N Channel,Continuous Drain Current Id:80A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0074ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.7V,Power RoHS Compliant: Yes	361	1:$1.6800 10:$1.4900 100:$1.1800 500:$0.9140 1000:$0.7210
IPI086N10N3G	Infineon Technologies AG	Power Field-Effect Transistor, 80A I(D), 100V, 0.0086ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Compliant	15500	1000:$0.5800 500:$0.6100 100:$0.6300 25:$0.6600 1:$0.7100
IPI086N10N3GXKSA1	Infineon Technologies AG	Power Field-Effect Transistor, 80A I(D), 100V, 0.0086ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Compliant	800	1000:$0.6500 500:$0.6800 100:$0.7100 25:$0.7400 1:$0.7900
IPI086N10N3 G DISTI # 726-IPI086N10N3G	Infineon Technologies AG	MOSFET N-Ch 100V 80A I2PAK-3 OptiMOS 3 RoHS: Compliant	398	1:$1.4400 10:$1.2300 100:$0.9410
IPI086N10N3G	Infineon Technologies AG		2000
IPI086N10N3GXKSA1 DISTI # 8922166	Infineon Technologies AG	MOSFET N-CHANNEL 100V 80A OPTIMOS TO262, PK	340	5:£1.1120 10:£0.8900 100:£0.6800 500:£0.6020 1250:£0.4740
IPI086N10N3GXKSA1 DISTI # IPI086N10N3GXKSA1	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,100V,80A,125W,PG-TO262-3	206	1:$1.2370 3:$1.0655 10:$0.8559 100:$0.7432 1000:$0.6920
IPI086N10N3GXKSA1 DISTI # 2781092	Infineon Technologies AG	MOSFET, N-CH, 100V, 80A, TO-262 RoHS: Compliant	361	5:£0.8900 25:£0.7850 100:£0.6800 250:£0.6410 500:£0.6020
IPI086N10N3GXKSA1 DISTI # 2781092	Infineon Technologies AG	MOSFET, N-CH, 100V, 80A, TO-262 RoHS: Compliant	361	5:$2.5000 25:$2.1800 100:$1.7700 250:$1.5000 500:$1.3000 1000:$1.2300 5000:$1.1600

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