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| 型號 | 製造商 | 描述 | 庫存 | 價格 |
|---|---|---|---|---|
| BSC090N03LSGATMA1 DISTI # V72:2272_06390968 | Infineon Technologies AG | Trans MOSFET N-CH 30V 13A 8-Pin TDSON T/R RoHS: Compliant | 3300 |
|
| BSC090N03LSGATMA1 DISTI # BSC090N03LSGATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 30V 48A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 3140In Stock |
|
| BSC090N03LSGATMA1 DISTI # BSC090N03LSGATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 30V 48A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 3140In Stock |
|
| BSC090N03LSGATMA1 DISTI # BSC090N03LSGATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 30V 48A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | On Order |
|
| BSC090N03LSGATMA1 DISTI # 26195689 | Infineon Technologies AG | Trans MOSFET N-CH 30V 13A 8-Pin TDSON T/R RoHS: Compliant | 3300 |
|
| BSC090N03LSGATMA1 DISTI # BSC090N03LSGATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 30V 13A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC090N03LSGATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 10000 |
|
| BSC090N03LS G DISTI # BSC090N03LS G | Infineon Technologies AG | Trans MOSFET N-CH 30V 13A 8-Pin TDSON T/R (Alt: BSC090N03LS G) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel | Asia - 0 | |
| BSC090N03LSGATMA1. DISTI # 31AC8219 | Infineon Technologies AG | Transistor Polarity:N Channel,Continuous Drain Current Id:48A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0075ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:-,Power Dissipation Pd:32W,No. of Pins:8Pins | 0 |
|
| BSC090N03LSG | Infineon Technologies AG | Power Field-Effect Transistor, 13A I(D), 30V, 0.0133ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 240 |
|
| BSC090N03LSGATMA1 | Infineon Technologies AG | Single N-Channel 30 V 9 mOhm 14 nC OptiMOS Power Mosfet - TDSON-8 RoHS: Not Compliant | 200Cut Tape/Mini-Reel |
|
| BSC090N03LSGATMA1 DISTI # 726-BSC090N03LSGATMA | Infineon Technologies AG | MOSFET N-Ch 30V 47A TDSON-8 OptiMOS 3 RoHS: Compliant | 4950 |
|
| BSC090N03LS G DISTI # 726-BSC090N03LSG | Infineon Technologies AG | MOSFET N-Ch 30V 47A TDSON-8 OptiMOS 3 RoHS: Compliant | 25374 |
|
| BSC090N03LS-G | Infineon Technologies AG | 195 |
| |
| BSC090N03LS-G | Infineon Technologies AG | 156 |
| |
| BSC090N03LSGATMA1 DISTI # 1775458 | Infineon Technologies AG | MOSFET, N CH, 48A, 30V, PG-TDSON-8 RoHS: Compliant | 4553 |
|
| BSC090N03LSGATMA1 DISTI # C1S322000595899 | Infineon Technologies AG | MOSFETs RoHS: Compliant | 3300 |
|
| 圖片 | 型號 | 描述 |
|---|---|---|
|
Mfr.#: BSC0901NSI OMO.#: OMO-BSC0901NSI |
MOSFET N-Ch 30V 100A TDSON-8 |
|
|
Mfr.#: BSC0901NSATMA1 OMO.#: OMO-BSC0901NSATMA1 |
MOSFET N-Ch 30V 100A TDSON-8 OptiMOS |
|
Mfr.#: BSC0910NDIATMA1 OMO.#: OMO-BSC0910NDIATMA1 |
MOSFET LV POWER MOS |
|
|
Mfr.#: BSC0924NDI OMO.#: OMO-BSC0924NDI |
MOSFET N-Ch 30V,30V 40A,40A TISON-8 |
|
Mfr.#: BSC0904NSIATMA1 |
MOSFET N-CH 30V 20A 8TDSON |
|
Mfr.#: BSC090N03LS G OMO.#: OMO-BSC090N03LS-G-1190 |
Trans MOSFET N-CH 30V 13A 8-Pin TDSON T/R (Alt: BSC090N03LS G) |
|
|
Mfr.#: BSC091N03MSCGATMA1 OMO.#: OMO-BSC091N03MSCGATMA1-1190 |
Power Field-Effect Transistor, 12A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
|
Mfr.#: BSC094N03SG OMO.#: OMO-BSC094N03SG-1190 |
全新原裝 |
|
|
Mfr.#: BSC090N03LSGATMA1-CUT TAPE |
全新原裝 |
|
Mfr.#: BSC0910NDIATMA1 |
MOSFET LV POWER MOS |