OMO ElectronicOMO Electronic
Expand menu
您好，登錄我的帳戶
0 購物車

FQU12N20TU

FQU12N20TU
Mfr. #:
FQU12N20TU
製造商:
ON Semiconductor / Fairchild
描述:
MOSFET 200V N-Channel QFET
生命週期:
製造商新產品
數據表:
FQU12N20TU 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
產品屬性
屬性值
製造商：
安森美半導體
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
通孔
包裝/案例：
TO-251-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
200 V
Id - 連續漏極電流：
9 A
Rds On - 漏源電阻：
280 mOhms
Vgs - 柵源電壓：
30 V
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
2.5 W
配置：
單身的
頻道模式：
增強
打包：
管子
高度：
6.3 mm
長度：
6.8 mm
系列：
FQU12N20
晶體管類型：
1 N-Channel
類型：
MOSFET
寬度：
2.5 mm
品牌：
安森美半導體/飛兆半導體
正向跨導 - 最小值：
7.3 S
秋季時間：
55 ns
產品類別：
MOSFET
上升時間：
120 ns
出廠包裝數量：
5040
子類別：
MOSFET
典型關斷延遲時間：
30 ns
典型的開啟延遲時間：
13 ns
第 # 部分別名：
FQU12N20TU_NL
單位重量：
0.012102 oz
Tags
FQU12N2, FQU12, FQU1, FQU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel QFET® MOSFET 200V, 9.0A, 280mΩ
***ark
Transistor,mosfet,n-Channel,200V V(Br)Dss,9A I(D),to-251Aa Rohs Compliant: Yes |Onsemi FQU12N20TU
***r Electronics
Power Field-Effect Transistor, 9A I(D), 200V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts..
***i-Key
MOSFET N-CH 200V 7.6A IPAK
***ser
MOSFETs 200V N-Channel QFET
***el Nordic
Contact for details
***i-Key
MOSFET N-CH 200V 7.6A IPAK
***ser
MOSFETs 200V N-Ch QFET Logic Level
***-Wing Technology
N-CHANNEL POWER MOSFET
***ure Electronics
Single N-Channel 200 V 0.235 Ohm 38 nC HEXFET® Power Mosfet - IPAK
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS
*** Stop Electro
Power Field-Effect Transistor, 13A I(D), 200V, 0.235ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:13A; On Resistance, Rds(on):235mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:I-PAK ;RoHS Compliant: Yes
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
***emi
Power MOSFET, N-Channel, QFET®, 250 V, 7.4 A, 420 mΩ, IPAK
***r Electronics
Power Field-Effect Transistor, 7.4A I(D), 250V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***emi
Power MOSFET, N-Channel, QFET®, 200 V, 7.8 A, 360 mΩ, IPAK
***et
Trans MOSFET N-CH 200V 7.8A 3-Pin(3+Tab) IPAK Rail
***r Electronics
Power Field-Effect Transistor, 7.8A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ark
N-Ch/200V/10A/Qfet Rohs Compliant: Yes |Onsemi FQU10N20CTU
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***emi
Power MOSFET, P-Channel, QFET®, -200 V, -3.7 A, 1.4 Ω, IPAK
*** Stop Electro
Power Field-Effect Transistor, 3.7A I(D), 200V, 1.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***rchild Semiconductor
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
型號 製造商 描述 庫存 價格
FQU12N20TU
DISTI # FQU12N20TU-ND		ON SemiconductorMOSFET N-CH 200V 9A IPAK
RoHS: Compliant
Min Qty: 5040
Container: Tube		Temporarily Out of Stock
  • 5040:$0.5709
FQU12N20TU
DISTI # FQU12N20TU		ON SemiconductorTrans MOSFET N-CH 200V 9A 3-Pin(3+Tab) IPAK Rail (Alt: FQU12N20TU)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€0.8019
  • 10:€0.7129
  • 25:€0.6409
  • 50:€0.5829
  • 100:€0.5339
  • 500:€0.4929
  • 1000:€0.4579
FQU12N20TU
DISTI # FQU12N20TU		ON SemiconductorTrans MOSFET N-CH 200V 9A 3-Pin(3+Tab) IPAK Rail - Rail/Tube (Alt: FQU12N20TU)
RoHS: Compliant
Min Qty: 5040
Container: Tube		Americas - 0
  • 5040:$0.4429
  • 10080:$0.4399
  • 20160:$0.4349
  • 30240:$0.4289
  • 50400:$0.4179
FQU12N20TU
DISTI # 82C4388		ON SemiconductorTRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,9A I(D),TO-251AA ROHS COMPLIANT: YES0
  • 10000:$0.5080
  • 2500:$0.5230
  • 1000:$0.6480
  • 500:$0.7420
  • 100:$0.8390
  • 10:$1.1000
  • 1:$1.2800
FQU12N20TU
DISTI # 512-FQU12N20TU		ON SemiconductorMOSFET 200V N-Channel QFET
RoHS: Compliant		3569
  • 1:$1.4000
  • 10:$1.1900
  • 100:$0.9130
  • 500:$0.8070
  • 1000:$0.6370
  • 2500:$0.5650
  • 10000:$0.5440
FQU12N20TUFairchild Semiconductor Corporation 
RoHS: Not Compliant		15120
  • 1000:$0.8200
  • 500:$0.8600
  • 100:$0.8900
  • 25:$0.9300
  • 1:$1.0000
圖片 型號 描述
SKY65723-81

Mfr.#: SKY65723-81

OMO.#: OMO-SKY65723-81

 RF Front End GPS/GNSS/BDS Pre-Filter
OPA2180IDGKR

Mfr.#: OPA2180IDGKR

OMO.#: OMO-OPA2180IDGKR

 Operational Amplifiers - Op Amps Lo Noise RL-RL Outpt 36V 0-Drift Op Amp
LDL1117S33R

Mfr.#: LDL1117S33R

OMO.#: OMO-LDL1117S33R

 LDO Voltage Regulators POWER MANAGEMENT
GRM21BR61E106KA73L

Mfr.#: GRM21BR61E106KA73L

OMO.#: OMO-GRM21BR61E106KA73L

 Multilayer Ceramic Capacitors MLCC - SMD/SMT 0805 X5R 25V 10uF
SF-0603S600M-2

Mfr.#: SF-0603S600M-2

OMO.#: OMO-SF-0603S600M-2

 Surface Mount Fuses 6A Slow Blow 0603 SinglFuse
OPA2180IDGKR

Mfr.#: OPA2180IDGKR

OMO.#: OMO-OPA2180IDGKR-TEXAS-INSTRUMENTS

 Operational Amplifiers - Op Amps Lo Noise RL-RL Outpt 36V 0-Drift Op Amp
LDL1117S33R

Mfr.#: LDL1117S33R

OMO.#: OMO-LDL1117S33R-STMICROELECTRONICS

 IC REG LINEAR 3.3V 1.2A SOT223
VOF-85-24

Mfr.#: VOF-85-24

OMO.#: OMO-VOF-85-24-CUI

 Switching Power Supplies ac-dc, 85 W, 24 Vdc, single output, open PCB
SKY65723-81

Mfr.#: SKY65723-81

OMO.#: OMO-SKY65723-81-SKYWORKS-SOLUTIONS

 IC RF AMP LNA GPS/GNSS SPFS
CRCW040212K1FKEDC

Mfr.#: CRCW040212K1FKEDC

OMO.#: OMO-CRCW040212K1FKEDC-VISHAY-DALE

 STANDARD THICK FILM CHIP RESISTORS WITH TOLERANCE 1 %
可用性
庫存:
Available
訂購:
1986
輸入數量:
FQU12N20TU的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$1.10
US$1.10
10
US$0.94
US$9.44
100
US$0.72
US$72.50
500
US$0.64
US$320.50
1000
US$0.51
US$506.00
2500
US$0.45
US$1 120.00
10000
US$0.43
US$4 320.00
25000
US$0.42
US$10 450.00
由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
從...開始
最新產品
More Newest Products
Top