MJ21196G

Mfr. #:: MJ21196G
製造商:: ON Semiconductor
描述:: Bipolar Transistors - BJT 16A 250V 250W NPN
生命週期:: 製造商新產品
數據表:: MJ21196G 數據表
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HTML Datasheet:: MJ21196G Datasheet MJ21196G Datasheet (P4-P6)
ECAD Model:

產品屬性
屬性值

製造商：: 安森美半導體

產品分類：: 雙極晶體管 - BJT

RoHS：: Y

安裝方式：: 通孔

包裝/案例：: TO-204-2

晶體管極性：: NPN

配置：: 單身的

集電極-發射極電壓 VCEO 最大值：: 250 V

集電極-基極電壓 VCBO：: 400 V

發射極基極電壓 VEBO：: 5 V

集電極-發射極飽和電壓：: 1.4 V

最大直流集電極電流：: 16 A

增益帶寬積 fT：: 4 MHz

最低工作溫度：: - 65 C

最高工作溫度：: + 150 C

系列：: MJ21196

高度：: 8.51 mm

長度：: 39.37 mm

打包：: 托盤

寬度：: 26.67 mm

品牌：: 安森美半導體

連續集電極電流：: 16 A

DC 集電極/基極增益 hfe 最小值：: 25

Pd - 功耗：: 250 W

產品類別：: BJT - 雙極晶體管

出廠包裝數量：: 100

子類別：: 晶體管

Tags: MJ21196, MJ211, MJ21, MJ2

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MJ21196G 評級和評論

L***v

Good

2019-05-30

S***r

2019-04-22

MJ21196G 描述

***emi: Bipolar Transistor, NPN, 250 V, 16 A

***Yang: Trans GP BJT NPN 250V 16A 3-Pin(2+Tab) TO-204 Tray - Trays

***S.I.T. Europe - USA - Asia: Power Bipolar Transistor, 16A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin

***ure Electronics: MJ Series 250 V 16 A Screw Mount NPN Silicon Power Transistor - TO-204AA

***th Star Micro: The MJ21195 and MJ21196 utilize Perforated Emitter technology and a specifically designed for high power audio output disk head positioners and linear applications.

***ment14 APAC: BIPOLAR TRANSISTOR, NPN, 250V; Transisto; BIPOLAR TRANSISTOR, NPN, 250V; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:250V; Transition Frequency Typ ft:4MHz; Power Dissipation Pd:250W; DC Collector Current:16A; DC Current Gain hFE:25; No. of Pins:2

***hard Electronics: Transistor; Bipolar; Si; NPN; Power; VCEO 250VDC; IC 16A; PD 250W; TO-204AA (TO-3)

***emi: Bipolar Transistor, NPN, 250 V, 16 A

***ical: Trans GP BJT NPN 250V 16A 250000mW 3-Pin(2+Tab) TO-3 Tray

***r Electronics: Power Bipolar Transistor, 16A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin

***enic: 250V 250W 16A NPN TO-3 Bipolar Transistors - BJT ROHS

***ure Electronics: MJ Series 250 V 16 A Screw Mount NPN Silicon Power Transistor - TO-204AA

***nell: TRANSISTOR, NPN, TO-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 250V; Transition Frequency ft: 4MHz; Power Dissipation Pd: 250W; DC Collector Current: 16A; DC Current Gain hFE: 75hFE; Transistor Case Style

***th Star Micro: The MJ21193 and MJ21194 utilize Perforated Emitter technology and a specifically designed for high power audio output disk head positioners and linear applications.

***ark: BIPOLAR TRANSISTOR, NPN, 250V, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage Max:250V; Continuous Collector Current:16A; Power Dissipation:250W; Transistor Mounting:Through Hole; No. of Pins:2Pins; Product Range:-; MSL:- RoHS Compliant: Yes

***(Formerly Allied Electronics): Transistor, Bipolar,Si,NPN,Power,VCEO 250VDC,IC 16A,PD 250W,TO-204AA (TO-3)

***emi: Bipolar Transistor, NPN, 250 V, 16 A

***Yang: Trans GP BJT NPN 250V 16A 3-Pin(2+Tab) TO-204 Tray - Trays

***enic: 250V 250W 16A 15@8A4V 4MHz [email protected] NPN -65¡Í~+200¡Í@(Tj) TO-3 Bipolar Transistors - BJT ROHS

***nell: TRANSISTOR, NPN, 250V, 16A, TO-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 250V; Transition Frequency ft: 4MHz; Power Dissipation Pd: 250W; DC Collector Current: 16A; DC Current Gain hFE: 60hFE; Transistor

***th Star Micro: The MJ15022 and MJ15024 are PowerBase power transistors designed for high power audio disk head positioners and other linear applications.

***emi: 16 A, 200 V, NPN Bipolar Power Transistor

***Yang: Trans GP BJT NPN 200V 16A 3-Pin(2+Tab) TO-204 Tray - Trays

***r Electronics: Power Bipolar Transistor, 16A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin

***ure Electronics: MJ Series 200 V 16 A Screw Mount NPN Silicon Power Transistor - TO-204AA

***(Formerly Allied Electronics): ON Semi MJ15022G NPN Bipolar Transistor16 A 200 V 3-Pin TO-204

***nell: TRANSISTOR, NPN, TO-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 200V; Transition Frequency ft: 4MHz; Power Dissipation Pd: 250W; DC Collector Current: 16A; DC Current Gain hFE: 60hFE; Transistor Case Style

***th Star Micro: The MJ15022 and MJ15024 are PowerBase power transistors designed for high power audio disk head positioners and other linear applications.

***ark: BIPOLAR TRANSISTOR, NPN, 200V, 16A, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage Max:200V; Continuous Collector Current:16A; Power Dissipation:250W; Transistor Mounting:Through Hole; No. of Pins:2Pins; Product Range:- RoHS Compliant: Yes

Market price

型號	製造商	描述	庫存	價格
MJ21196G DISTI # V99:2348_07289871	ON Semiconductor	Trans GP BJT NPN 250V 16A 3-Pin(2+Tab) TO-3 Tray RoHS: Compliant	86	500:$2.6850 200:$2.9930 100:$2.9960
MJ21196G DISTI # V36:1790_07289871	ON Semiconductor	Trans GP BJT NPN 250V 16A 3-Pin(2+Tab) TO-3 Tray RoHS: Compliant	66	500:$2.6850 200:$2.9930 100:$2.9960
MJ21196G DISTI # MJ21196GOS-ND	ON Semiconductor	TRANS NPN 250V 16A TO3 RoHS: Compliant Min Qty: 1 Container: Tray	467In Stock	1000:$3.3663 500:$3.9915 100:$4.6888 10:$5.7230 1:$6.3700
MJ21196G DISTI # 30680136	ON Semiconductor	Trans GP BJT NPN 250V 16A 3-Pin(2+Tab) TO-3 Tray RoHS: Compliant	86	2:$2.9960
MJ21196G DISTI # 29063979	ON Semiconductor	Trans GP BJT NPN 250V 16A 3-Pin(2+Tab) TO-3 Tray RoHS: Compliant	66	66:$2.9960
MJ21196G DISTI # MJ21196G	ON Semiconductor	Trans GP BJT NPN 250V 16A 3-Pin(2+Tab) TO-204 Tray (Alt: MJ21196G) RoHS: Compliant Min Qty: 1 Container: Tray	Europe - 0	1:€3.5900 10:€3.2900 25:€3.1900 50:€3.0900 100:€2.9900 500:€2.8900 1000:€2.6900
MJ21196G DISTI # MJ21196G	ON Semiconductor	Trans GP BJT NPN 250V 16A 3-Pin(2+Tab) TO-204 Tray - Trays (Alt: MJ21196G) RoHS: Compliant Min Qty: 1 Container: Tray	Americas - 0	1:$2.7900 10:$2.7900 25:$2.7900 50:$2.7900 100:$2.7900 500:$2.7900 1000:$2.7900
MJ21196G DISTI # 26K4525	ON Semiconductor	Trans GP BJT NPN 250V 16A 3-Pin(2+Tab) TO-204 Tray - Bulk (Alt: 26K4525) RoHS: Compliant Min Qty: 1 Container: Bulk	Americas - 0	1:$6.0700 10:$5.1600 25:$4.9300 50:$4.7000 100:$4.4700 250:$4.2400 500:$3.8100
MJ21196G DISTI # 26K4525	ON Semiconductor	BIPOLAR TRANSISTOR, NPN, 250V,Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:250V,Transition Frequency ft:4MHz,Power Dissipation Pd:250W,DC Collector Current:16A,DC Current Gain hFE:25hFE,No. of Pins:2Pins,MSL:- , RoHS Compliant: Yes	152	1:$5.4700 10:$4.6500 25:$4.4400 50:$4.2300 100:$4.0300 250:$3.8200 500:$3.4300
MJ21196G DISTI # 863-MJ21196G	ON Semiconductor	Bipolar Transistors - BJT 16A 250V 250W NPN RoHS: Compliant	2356	1:$6.0700 10:$5.1600 100:$4.4700 200:$4.2400 500:$3.8100 1000:$3.2100 2000:$3.0500
MJ21196 DISTI # 863-MJ21196	ON Semiconductor	Bipolar Transistors - BJT 16A 250V 250W NPN RoHS: Not compliant	0
MJ21196G	ON Semiconductor	RoHS: Not Compliant	45328	1000:$2.4700 500:$2.6000 100:$2.7100 25:$2.8200 1:$3.0400
MJ21196G	ON Semiconductor		6
MJ21196G	ON Semiconductor	RoHS: Not Compliant	Europe - 84
MJ21196G DISTI # MJ21196G	ON Semiconductor	BJT 16A 250V 250W NPN RoHS: Compliant	440	50:€2.7100 100:€2.3100 300:€2.1100 500:€2.0300
MJ21196G	ON Semiconductor	Silicon Power Transistors	20	1:$8.2600 100:$5.2700 500:$4.3500 1000:$4.0000

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