FZ1200R33HE3BPSA1

Mfr. #:: FZ1200R33HE3BPSA1
製造商:: Infineon Technologies
描述:: MODULE IGBT IHVB190-3
生命週期:: 製造商新產品
數據表:: FZ1200R33HE3BPSA1 數據表
交貨:: DHL FedEx Ups TNT EMS
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ECAD Model:

產品屬性
屬性值

Tags: FZ1200R33H, FZ1200R3, FZ1200R, FZ1200, FZ120, FZ12, FZ1

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FZ1200R33HE3BPSA1 描述

***ineon SCT: 3300 V, 1200 A single-switch IGBT module, AG-IHVB190-3, RoHS

***nell: IGBT, MODULE, N-CH, 3.3KV, 1.2KA; Transistor Polarity: N Channel; DC Collector Current: 1.2kA; Collector Emitter Saturation Voltage Vce(on): 2.7V; Power Dissipation Pd: 13kW; Collector Emitter Voltage V(br)ceo: 3.3kV; Transis

***ark: IGBT MOD, 3.3KV, 1.2KA, 13KW; Continuous Collector Current:1.2kA; Collector Emitter Saturation Voltage:2.7V; Power Dissipation:13kW; Operating Temperature Max:150°C; IGBT Termination:Tab; Collector Emitter Voltage Max:3.3kV RoHS Compliant: Yes

***ineon: 3300V IHV B 190mm single switch IGBT Module with IGBT3 - The best solution for your medium voltage and drives applications. | Summary of Features: High DC Stability; High Short Circuit Capability; Self Limiting short Circuit Current; Low switching Losses; Unbeatable Robustness; T(vj op) = 150C; Low V(cesat) with positive Temperature coefficient; AlSiC Base Plate for increased Thermal Cycling Capability; Package with CTI > 600; Isolated Base Plate | Benefits: Standardized housing | Target Applications: drives; wind; traction; cav

Market price

型號	製造商	描述	庫存	價格
FZ1200R33HE3BPSA1 DISTI # FZ1200R33HE3BPSA1-ND	Infineon Technologies AG	MODULE IGBT IHVB190-3 RoHS: Compliant Min Qty: 1 Container: Tray	Temporarily Out of Stock	1:$1,664.2800
FZ1200R33HE3BPSA1 DISTI # FZ1200R33HE3BPSA1	Infineon Technologies AG	IGBTs - Trays (Alt: FZ1200R33HE3BPSA1) RoHS: Compliant Min Qty: 1 Container: Tray	Americas - 0	1000:$1,665.0000 500:$1,695.0000 100:$1,754.0000 50:$1,820.0000 25:$1,845.0000 10:$1,872.0000 1:$1,899.0000
FZ1200R33HE3BPSA1 DISTI # 49AC0229	Infineon Technologies AG	IGBT, MODULE, N-CH, 3.3KV, 1.2KA,Transistor Polarity:N Channel,DC Collector Current:1.2kA,Collector Emitter Saturation Voltage Vce(on):2.7V,Power Dissipation Pd:13kW,Collector Emitter Voltage V(br)ceo:3.3kV,Transistor Case RoHS Compliant: Yes	3	25:$1,660.4000 10:$1,766.3800 5:$1,792.6000 1:$1,819.6200
FZ1200R33HE3 DISTI # 641-FZ1200R33HE3	Infineon Technologies AG	IGBT Modules IGBT Module 1200A 3300V RoHS: Compliant	2	1:$1,638.0800
FZ1200R33HE3BPSA1 DISTI # 2839519	Infineon Technologies AG	IGBT, MODULE, N-CH, 3.3KV, 1.2KA	3	1:£1,245.0000

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