IPD60R520CP

Mfr. #:: IPD60R520CP
製造商:: Rochester Electronics, LLC
描述:: IGBT Transistors MOSFET N-Ch 600V 6.8A DPAK-2 CoolMOS CP
生命週期:: 製造商新產品
數據表:: IPD60R520CP 數據表
交貨:: DHL FedEx Ups TNT EMS
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ECAD Model:

產品屬性
屬性值

製造商: 英飛凌

產品分類: FET - 單

Tags: IPD60R520CP, IPD60R5, IPD60R, IPD60, IPD6, IPD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPD60R520CP 描述

***et: Trans MOSFET N-CH 600V 6.8A 3-Pin TO-252 T/R

***i-Key: MOSFET N-CH 650V 6.8A TO-252

***ark: MOSFET, N, TO-252; Transistor Type:Power MOSFET; Transistor Polarity:N Channel; Voltage, Vds Typ:650V; Current, Id Cont:6.8A; On State Resistance:0.52ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case ;RoHS Compliant: Yes

***ment14 APAC: MOSFET, N, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:6.8A; Drain Source Voltage Vds:650V; On Resistance Rds(on):520mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:66W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:6.8A; Package / Case:TO-252; Power Dissipation Pd:66W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***nell: MOSFET, N, TO-252; Biegunowość tranzystora:Kanał N; Prąd ciągły Id drenu:6.8A; Napięcie drenu / źródła Vds:650V; Rezystancja przewodzenia Rds(on):0.47ohm; Napięcie Vgs pomiaru Rds(on):10V; Napięcie progowe Vgs:3V; Straty mocy Pd:66W; Rodzaj obudowy tranzystora:TO-252; Liczba pinów:3piny/-ów; Temperatura robocza, maks.:150°C; Asortyment produktów:-; Kwalifikacja motoryzacyjna:-; Wskaźnik wrażliwości na wilgoć MSL:MSL 1 - nieograniczone; Substancje SVHC:No SVHC (27-Jun-2018); Maks. prąd Id:6.8A; Napięcie Vds, typ.:650V; Napięcie Vgs pomiaru Rds on:10V; Napięcie Vgs, maks.:20V; Rodzaj tranzystora:Mocy MOSFET; Temperatura robocza, min.:-55°C; Typ zakończenia:Do montażu powierzchniowego; Zakres temperatury roboczej:-55°C do +150°C

Market price

型號	製造商	描述	庫存	價格
IPD60R520CPBTMA1 DISTI # IPD60R520CPBTMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 600V 6.8A TO-252 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call
IPD60R520CPBTMA1 DISTI # IPD60R520CPBTMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 600V 6.8A TO-252 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
IPD60R520CPBTMA1 DISTI # IPD60R520CPBTMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 600V 6.8A TO-252 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
IPD60R520CPATMA1 DISTI # IPD60R520CPATMA1-ND	Infineon Technologies AG	MOSFET N-CH 600V 6.8A TO-252 RoHS: Compliant Container: Tape & Reel (TR)	Limited Supply - Call
IPD60R520CP	Infineon Technologies AG	Power Field-Effect Transistor, 6.8A I(D), 600V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Compliant	4840	1000:$0.7500 500:$0.7900 100:$0.8200 25:$0.8600 1:$0.9200
IPD60R520CPATMA1	Infineon Technologies AG	Power Field-Effect Transistor, 6.8A I(D), 600V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-252 RoHS: Compliant	17500	1000:$0.9000 500:$0.9400 100:$0.9800 25:$1.0300 1:$1.1000
IPD60R520CPBTMA1	Infineon Technologies AG	Power Field-Effect Transistor, 6.8A I(D), 600V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Not Compliant	7500	1000:$0.7500 500:$0.7900 100:$0.8200 25:$0.8600 1:$0.9200

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