IPP60R080P7XKSA1

IPP60R080P7XKSA1
Mfr. #:
IPP60R080P7XKSA1
製造商:
Infineon Technologies
描述:
MOSFET N-CH 600V 37A TO220-3
生命週期:
製造商新產品
數據表:
IPP60R080P7XKSA1 數據表
交貨:
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支付:
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ECAD Model:
產品屬性
屬性值
Tags
IPP60R0, IPP60R, IPP60, IPP6, IPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 600 V 80 mOhm 51 nC CoolMOS™ Power Mosfet - TO-220-3
***ical
Trans MOSFET N-CH 600V 37A 3-Pin(3+Tab) TO-220 Tube
***i-Key
MOSFET N-CH 600V 37A TO220-3
***ronik
N-CH 600V 37A 80mOhm TO220-3
***et Europe
HIGH POWER_NEW
***ark
Mosfet, N-Ch, 600V, 37A, 129W, To-220; Transistor Polarity:n Channel; Continuous Drain Current Id:37A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.069Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 600V, 37A, 129W, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:37A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.069ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation Pd:129W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS P7 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET CAN N, 600V, 37A, 129W, TO-220; Polarità Transistor:Canale N; Corrente Continua di Drain Id:37A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.069ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.5V; Dissipazione di Potenza Pd:129W; Modello Case Transistor:TO-220; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS P7 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
The 600V CoolMOS P7 is the successor to the 600V CoolMOS P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS 7th generation platform ensure its high efficiency. | Summary of Features: 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G | Benefits: Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency | Target Applications: TV power supply; Industrial SMPS; Server; Telecom; Lighting
型號 製造商 描述 庫存 價格
IPP60R080P7XKSA1
DISTI # V36:1790_18203760
Infineon Technologies AGIPP60R080P7XKSA10
    IPP60R080P7XKSA1
    DISTI # IPP60R080P7XKSA1-ND
    Infineon Technologies AGMOSFET N-CH 600V 37A TO220-3
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    On Order
    • 1000:$3.3346
    • 500:$3.8858
    • 100:$4.7127
    • 10:$5.6670
    • 1:$6.3100
    IPP60R080P7XKSA1
    DISTI # SP001647034
    Infineon Technologies AGHIGH POWER_NEW (Alt: SP001647034)
    RoHS: Compliant
    Min Qty: 1
    Europe - 450
    • 1:€2.8900
    • 10:€2.5900
    • 25:€2.4900
    • 50:€2.3900
    • 100:€2.2900
    • 500:€2.1900
    • 1000:€2.0900
    IPP60R080P7XKSA1
    DISTI # IPP60R080P7XKSA1
    Infineon Technologies AGHIGH POWER_NEW - Rail/Tube (Alt: IPP60R080P7XKSA1)
    RoHS: Compliant
    Min Qty: 500
    Container: Tube
    Americas - 0
    • 500:$2.6900
    • 1000:$2.5900
    • 2000:$2.4900
    • 3000:$2.3900
    • 5000:$2.3900
    IPP60R080P7XKSA1
    DISTI # 93AC7133
    Infineon Technologies AGMOSFET, N-CH, 600V, 37A, 129W, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:37A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.069ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes0
    • 500:$3.2000
    • 250:$3.5600
    • 100:$3.7500
    • 50:$3.9400
    • 25:$4.1400
    • 10:$4.3300
    • 1:$5.1000
    IPP60R080P7XKSA1
    DISTI # 726-IPP60R080P7XKSA1
    Infineon Technologies AGMOSFET HIGH POWER_NEW
    RoHS: Compliant
    0
    • 1:$5.1000
    • 10:$4.3300
    • 100:$3.7500
    • 250:$3.5600
    • 500:$3.2000
    • 1000:$2.6900
    • 2500:$2.5600
    IPP60R080P7XKSA1
    DISTI # 2986483
    Infineon Technologies AGMOSFET, N-CH, 600V, 37A, 129W, TO-220
    RoHS: Compliant
    0
    • 1000:$3.9000
    • 500:$4.4500
    • 250:$4.9200
    • 100:$5.1900
    • 10:$5.9500
    • 1:$7.6200
    IPP60R080P7XKSA1
    DISTI # XSKDRABV0033064
    Infineon Technologies AG 
    RoHS: Compliant
    400 in Stock0 on Order
    • 400:$4.0080
    • 116:$4.2960
    IPP60R080P7XKSA1
    DISTI # 2986483
    Infineon Technologies AGMOSFET, N-CH, 600V, 37A, 129W, TO-220
    RoHS: Compliant
    0
    • 500:£2.5100
    • 250:£2.7800
    • 100:£2.9300
    • 10:£3.3600
    • 1:£4.3000
    圖片 型號 描述
    IPP60R080P7XKSA1

    Mfr.#: IPP60R080P7XKSA1

    OMO.#: OMO-IPP60R080P7XKSA1

    MOSFET HIGH POWER_NEW
    IPP60R080P7XKSA1

    Mfr.#: IPP60R080P7XKSA1

    OMO.#: OMO-IPP60R080P7XKSA1-INFINEON-TECHNOLOGIES

    MOSFET N-CH 600V 37A TO220-3
    可用性
    庫存:
    Available
    訂購:
    4000
    輸入數量:
    IPP60R080P7XKSA1的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格(美元)
    數量
    單價
    小計金額
    1
    US$3.56
    US$3.56
    10
    US$3.38
    US$33.84
    100
    US$3.21
    US$320.63
    500
    US$3.03
    US$1 514.05
    1000
    US$2.85
    US$2 850.00
    由於2021年半導體供不應求,低於2021年之前的正常價格,請發詢價確認。
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