SI2306BDS-T1-GE3

SI2306BDS-T1-GE3
Mfr. #:
SI2306BDS-T1-GE3
製造商:
Vishay / Siliconix
描述:
MOSFET 30V 4.0A 1.25W 47mohm @ 4.5V
生命週期:
製造商新產品
數據表:
SI2306BDS-T1-GE3 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI2306BDS-T1-GE3 DatasheetSI2306BDS-T1-GE3 Datasheet (P4-P6)SI2306BDS-T1-GE3 Datasheet (P7-P8)
ECAD Model:
更多信息:
SI2306BDS-T1-GE3 更多信息
產品屬性
屬性值
製造商:
威世
產品分類:
MOSFET
RoHS:
Y
技術:
安裝方式:
貼片/貼片
包裝/案例:
SOT-23-3
商品名:
溝槽場效應晶體管
打包:
捲軸
系列:
SI2
品牌:
威世 / Siliconix
產品類別:
MOSFET
出廠包裝數量:
3000
子類別:
MOSFET
第 # 部分別名:
SI2306BDS-GE3
單位重量:
0.000282 oz
Tags
SI2306BDS-T1, SI2306BDS-T, SI2306B, SI2306, SI230, SI23, SI2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 30V 3.16A 3-Pin SOT-23 T/R
***ronik
N-CHANNEL-FET 4A 30V SOT23 RoHSconf
***ment14 APAC
N CHANNEL MOSFET, 30V, 4A, TO-236; Trans; N CHANNEL MOSFET, 30V, 4A, TO-236; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:30V; On Resistance Rds(on):65mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:3V; No. of Pins:3
SI2 Series TrenchFET® Power MOSFETs
Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.
型號 製造商 描述 庫存 價格
SI2306BDS-T1-GE3
DISTI # V72:2272_09216787
Vishay IntertechnologiesTrans MOSFET N-CH 30V 3.16A 3-Pin SOT-23 T/R
RoHS: Compliant
2468
  • 1000:$0.2567
  • 500:$0.3246
  • 250:$0.3731
  • 100:$0.4146
  • 25:$0.5007
  • 10:$0.6120
  • 1:$0.7921
SI2306BDS-T1-GE3
DISTI # V36:1790_09216787
Vishay IntertechnologiesTrans MOSFET N-CH 30V 3.16A 3-Pin SOT-23 T/R
RoHS: Compliant
0
  • 3000:$0.2127
SI2306BDS-T1-GE3
DISTI # SI2306BDS-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CH 30V 3.16A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
3520In Stock
  • 1000:$0.2390
  • 500:$0.3093
  • 100:$0.3937
  • 10:$0.5270
  • 1:$0.6200
SI2306BDS-T1-GE3
DISTI # SI2306BDS-T1-GE3DKR-ND
Vishay SiliconixMOSFET N-CH 30V 3.16A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
3520In Stock
  • 1000:$0.2390
  • 500:$0.3093
  • 100:$0.3937
  • 10:$0.5270
  • 1:$0.6200
SI2306BDS-T1-GE3
DISTI # SI2306BDS-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CH 30V 3.16A SOT23-3
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 30000:$0.1747
  • 15000:$0.1843
  • 6000:$0.1979
  • 3000:$0.2116
SI2306BDS-T1-GE3
DISTI # 32400643
Vishay IntertechnologiesTrans MOSFET N-CH 30V 3.16A 3-Pin SOT-23 T/R
RoHS: Compliant
3000
  • 3000:$0.1770
SI2306BDS-T1-GE3
DISTI # 33599494
Vishay IntertechnologiesTrans MOSFET N-CH 30V 3.16A 3-Pin SOT-23 T/R
RoHS: Compliant
3000
  • 327:$0.2354
SI2306BDS-T1-GE3
DISTI # 31084367
Vishay IntertechnologiesTrans MOSFET N-CH 30V 3.16A 3-Pin SOT-23 T/R
RoHS: Compliant
2468
  • 39:$0.7921
SI2306BDS-T1-GE3
DISTI # SI2306BDS-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 30V 3.16A 3-Pin TO-236 T/R (Alt: SI2306BDS-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Europe - 0
  • 30000:€0.1729
  • 18000:€0.1859
  • 12000:€0.2009
  • 6000:€0.2339
  • 3000:€0.3429
SI2306BDS-T1-GE3
DISTI # SI2306BDS-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 30V 3.16A 3-Pin TO-236 T/R (Alt: SI2306BDS-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Asia - 0
    SI2306BDS-T1-GE3
    DISTI # SI2306BDS-T1-GE3
    Vishay IntertechnologiesTrans MOSFET N-CH 30V 3.16A 3-Pin TO-236 T/R - Tape and Reel (Alt: SI2306BDS-T1-GE3)
    RoHS: Not Compliant
    Min Qty: 3000
    Container: Reel
    Americas - 0
    • 30000:$0.1659
    • 18000:$0.1709
    • 12000:$0.1759
    • 6000:$0.1829
    • 3000:$0.1889
    SI2306BDS-T1-GE3
    DISTI # 16P3706
    Vishay IntertechnologiesTrans MOSFET N-CH 30V 3.16A 3-Pin TO-236 T/R - Product that comes on tape, but is not reeled (Alt: 16P3706)
    RoHS: Not Compliant
    Min Qty: 1
    Container: Ammo Pack
    Americas - 0
    • 1000:$0.2220
    • 500:$0.2870
    • 250:$0.3180
    • 100:$0.3490
    • 50:$0.4100
    • 25:$0.4700
    • 1:$0.6200
    SI2306BDS-T1-GE3
    DISTI # 16P3706
    Vishay IntertechnologiesN CHANNEL MOSFET, 30V, 4A, TO-236,Transistor Polarity:N Channel,Continuous Drain Current Id:4A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.065ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:3V,No. of Pins:3PinsRoHS Compliant: Yes3000
    • 1:$0.1530
    • 25:$0.1530
    • 50:$0.1530
    • 100:$0.1530
    • 250:$0.1530
    • 500:$0.1530
    • 1000:$0.1530
    SI2306BDS-T1-GE3.
    DISTI # 30AC0137
    Vishay IntertechnologiesTransistor Polarity:N Channel,Continuous Drain Current Id:3.16A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.038ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation Pd:750mW,No. of Pins:3Pins RoHS Compliant: No0
    • 30000:$0.1660
    • 18000:$0.1710
    • 12000:$0.1760
    • 6000:$0.1830
    • 1:$0.1890
    SI2306BDS-T1-GE3
    DISTI # 781-SI2306BDS-T1-GE3
    Vishay IntertechnologiesMOSFET 30V 4.0A 1.25W 47mohm @ 4.5V
    RoHS: Compliant
    8400
    • 1:$0.6100
    • 10:$0.4690
    • 100:$0.3480
    • 500:$0.2860
    • 1000:$0.2210
    • 3000:$0.2010
    • 6000:$0.1880
    • 9000:$0.1750
    SI2306BDS-T1-GE3Vishay Intertechnologies 9000
      圖片 型號 描述
      PWD13F60

      Mfr.#: PWD13F60

      OMO.#: OMO-PWD13F60

      Gate Drivers High-density power driver - high voltage full bridge with integrated gate driver
      SMA4F12AY

      Mfr.#: SMA4F12AY

      OMO.#: OMO-SMA4F12AY

      TVS Diodes / ESD Suppressors DFD PROTECTION
      ZXTP2012GTA

      Mfr.#: ZXTP2012GTA

      OMO.#: OMO-ZXTP2012GTA

      Bipolar Transistors - BJT 60V PNP Low Sat
      BYG10Y-E3/TR

      Mfr.#: BYG10Y-E3/TR

      OMO.#: OMO-BYG10Y-E3-TR

      Rectifiers 1.5 Amp 1600 Volt
      IRLML2803TRPBF

      Mfr.#: IRLML2803TRPBF

      OMO.#: OMO-IRLML2803TRPBF

      MOSFET MOSFT 30V 1.2A 250mOhm 3.3nC LogLvl
      GRM155R60J106ME47D

      Mfr.#: GRM155R60J106ME47D

      OMO.#: OMO-GRM155R60J106ME47D

      Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 10uF 6.3volts *Derate Voltage/Temp
      C1S 5

      Mfr.#: C1S 5

      OMO.#: OMO-C1S-5

      Surface Mount Fuses 1206 SMT Fuse Slow Blow, 5A
      IRLML2803TRPBF

      Mfr.#: IRLML2803TRPBF

      OMO.#: OMO-IRLML2803TRPBF-INFINEON-TECHNOLOGIES

      MOSFET N-CH 30V 1.2A SOT-23
      WSK1206R0400FEA18

      Mfr.#: WSK1206R0400FEA18

      OMO.#: OMO-WSK1206R0400FEA18-VISHAY-DALE

      RES 0.04 OHM 1% 1/2W 1206
      GRM155R60J106ME47D

      Mfr.#: GRM155R60J106ME47D

      OMO.#: OMO-GRM155R60J106ME47D-MURATA-ELECTRONICS

      Cap Ceramic 10uF 6.3V X5R 20% Pad SMD 0402 85C T/R
      可用性
      庫存:
      Available
      訂購:
      1991
      輸入數量:
      SI2306BDS-T1-GE3的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
      參考價格(美元)
      數量
      單價
      小計金額
      1
      US$0.61
      US$0.61
      10
      US$0.47
      US$4.69
      100
      US$0.35
      US$34.80
      500
      US$0.29
      US$143.00
      1000
      US$0.22
      US$221.00
      由於2021年半導體供不應求,低於2021年之前的正常價格,請發詢價確認。
      從...開始
      最新產品
      Top