FF200R12KT3HOSA1

Mfr. #:: FF200R12KT3HOSA1
製造商:: Infineon Technologies
描述:: Trench and Field Stop IGBT4un
生命週期:: 製造商新產品
數據表:: FF200R12KT3HOSA1 數據表
交貨:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: FF200R12KT3HOSA1 Datasheet FF200R12KT3HOSA1 Datasheet (P4-P6)FF200R12KT3HOSA1 Datasheet (P7-P8)
ECAD Model:

產品屬性
屬性值

Tags: FF200R12KT3, FF200R12KT, FF200R12K, FF200R12, FF200R1, FF200R, FF200, FF20, FF2

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FF200R12KT3HOSA1 描述

***et Europe: Trans IGBT Module N-CH 1.2KV 295A 7-pin 62MM-1

***ark: Igbt, Module, N-Ch, 1.2Kv, 295A; Transistor Polarity:n Channel; Dc Collector Current:295A; Collector Emitter Saturation Voltage Vce(On):1.7V; Power Dissipation Pd:1.05Kw; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Rohs Compliant: Yes

***ineon: Our well-known 62 mm 1200V dual IGBT modules with fast trench/fieldstop IGBT3 and Emitter Controlled High Efficiency diode are the right choice for your design. | Summary of Features: Superior solution for frequency controlled inverter drives; UL/CSA Certification with UL1557 E83336; Operating temperature up to 125 C (max 150 C); Optimized switching characteristic like softness and reduced switching losses; Existing packages with higher current capability; RoHS compliant | Benefits: Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; cav; ups; induction-heating; welding

Market price

型號	製造商	描述	庫存	價格
FF200R12KT3HOSA1 DISTI # V99:2348_18205860	Infineon Technologies AG	Trench and Field Stop IGBT4un RoHS: Compliant	0	10:$88.3300
FF200R12KT3HOSA1 DISTI # FF200R12KT3HOSA1-ND	Infineon Technologies AG	IGBT MODULE VCES 1200V 200A RoHS: Not compliant Min Qty: 10 Container: Bulk	Temporarily Out of Stock	10:$103.6880
FF200R12KT3HOSA1 DISTI # FF200R12KT3HOSA1	Infineon Technologies AG	MEDIUM POWER 62MM - Trays (Alt: FF200R12KT3HOSA1) RoHS: Compliant Min Qty: 10 Container: Tray	Americas - 0	100:$84.8900 60:$86.9900 40:$89.1900 20:$91.5900 10:$92.7900
FF200R12KT3HOSA1 DISTI # 13AC8640	Infineon Technologies AG	IGBT, MODULE, N-CH, 1.2KV, 295A,Transistor Polarity:N Channel,DC Collector Current:295A,Collector Emitter Saturation Voltage Vce(on):1.7V,Power Dissipation Pd:1.05kW,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case RoHS Compliant: Yes	10	100:$84.3400 50:$89.7300 25:$91.0600 10:$92.4300 5:$95.1700 1:$97.7900
FF200R12KT3 DISTI # 641-FF200R12KT3	Infineon Technologies AG	IGBT Modules N-CH 1.2KV 295A	14	1:$112.8500 5:$110.7800 10:$105.7900
FF200R12KT3HOSA1 DISTI # 2726124	Infineon Technologies AG	IGBT, MODULE, N-CH, 1.2KV, 295A RoHS: Compliant	10	50:$144.0600 25:$144.2900 10:$146.6900 5:$151.7500 2:$157.1700 1:$162.9900
FF200R12KT3HOSA1 DISTI # 2726124	Infineon Technologies AG	IGBT, MODULE, N-CH, 1.2KV, 295A	8	10:£79.9900 5:£81.6500 1:£83.3200

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	Mfr.#: FF200R12KT3HOSA1 OMO.#: OMO-FF200R12KT3HOSA1-INFINEON-TECHNOLOGIES	Trench and Field Stop IGBT4un