FDU6N50TU

Mfr. #:: FDU6N50TU
製造商:: ON Semiconductor / Fairchild
描述:: MOSFET 500V N-Channel MOSFET
生命週期:: 製造商新產品
數據表:: FDU6N50TU 數據表
交貨:: DHL FedEx Ups TNT EMS
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ECAD Model:

產品屬性
屬性值

製造商：: 安森美半導體

產品分類：: MOSFET

RoHS：: Y

技術：: 矽

安裝方式：: 通孔

包裝/案例：: TO-220-3

通道數：: 1 Channel

晶體管極性：: N通道

Vds - 漏源擊穿電壓：: 500 V

Id - 連續漏極電流：: 6 A

Rds On - 漏源電阻：: 900 mOhms

Vgs - 柵源電壓：: 30 V

最低工作溫度：: - 55 C

最高工作溫度：: + 150 C

Pd - 功耗：: 89 W

配置：: 單身的

頻道模式：: 增強

打包：: 管子

高度：: 16.3 mm

長度：: 10.67 mm

系列：: FDU6N50

晶體管類型：: 1 N-Channel

寬度：: 4.7 mm

品牌：: 安森美半導體/飛兆半導體

秋季時間：: 35 ns

產品類別：: MOSFET

上升時間：: 55 ns

出廠包裝數量：: 5040

子類別：: MOSFET

典型關斷延遲時間：: 25 ns

典型的開啟延遲時間：: 6 ns

單位重量：: 0.012102 oz

Tags: FDU6N5, FDU6N, FDU6, FDU

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDU6N50TU 描述

***emi: N-Channel Power MOSFET, UniFETTM, 500 V, 6 A, 900 mΩ, IPAK

***et: Trans MOSFET N-CH 500V 6A 3-Pin(3+Tab) IPAK Rail

***r Electronics: Power Field-Effect Transistor, 6A I(D), 500V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***ark: MOSFET, N-CH, 500V, 6A, IPAK; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:6A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; No. of Pins:3Pins RoHS Compliant: Yes

***icroelectronics: N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh M2 Power MOSFET in IPAK package

***ark: Power Mosfet, N Channel, 7 A, 650 V, 0.6 Ohm, 10 V, 3 V Rohs Compliant: Yes

*** Electronics: STMICROELECTRONICS STU11N65M2 Power MOSFET, N Channel, 7 A, 650 V, 0.6 ohm, 10 V, 3 V

***nell: MOSFET, N CHANNEL, 650V, 7A, TO-251-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 7A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.6ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; P

***emi: Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 4.6 A, 950 mΩ, IPAK

***nell: MOSFET, N, 600V, I-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:4.6A; Resistance, Rds On:0.95ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:I-PAK; Termination Type:Through Hole; Alternate Case Style:TO-251AA; Current, Idm Pulse:13.8A; No. of Pins:3; Power Dissipation:54W; Power, Pd:54W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Voltage, Vds:600V; Voltage, Vds Max:600V; Voltage, Vgs th Max:5V; dv/dt:10V/µs

***rchild Semiconductor: SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

***i-Key: MOSFET N-CH 400V 4.5A IPAK

***ser: MOSFETs 400V N-Channel Adv Q-FET C-Series

***icroelectronics: N-channel 600 V, 0.72 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in IPAK package

***ure Electronics: N-Channel 600 V 780 mOhm Through Hole Mdmesh II Plus Mosfet - IPAK

***r Electronics: Power Field-Effect Transistor, 5.5A I(D), 600V, 0.78ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251

***icroelectronics: N-channel 650 V, 0.79 Ohm typ., 5 A MDmesh M2 Power MOSFET in IPAK package

***el Electronic: STMICROELECTRONICS STU9N65M2 Power MOSFET, N Channel, 5 A, 650 V, 0.79 ohm, 10 V, 3 V

***nell: MOSFET, N CHANNEL, 650V, 5A, TO-251-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 5A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.79ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V;

***emi: Power MOSFET 600V 6.8A 745 mOhm Single N-Channel DPAK

***ical: Trans MOSFET N-CH 600V 6.6A 3-Pin(2+Tab) DPAK Tube

***ark: TUBE / NFET DPAK 600V 6.8A 745

***nell: NDD60N745U1-35G, SHIFT REGISTERS;

Market price

型號	製造商	描述	庫存	價格
FDU6N50TU DISTI # FDU6N50TU-ND	ON Semiconductor	MOSFET N-CH 500V 6A IPAK RoHS: Compliant Min Qty: 5040 Container: Tube	Temporarily Out of Stock	5040:$0.5265
FDU6N50TU DISTI # FDU6N50TU	ON Semiconductor	Trans MOSFET N-CH 500V 6A 3-Pin(3+Tab) IPAK Rail - Rail/Tube (Alt: FDU6N50TU) RoHS: Compliant Min Qty: 5040 Container: Tube	Americas - 0	5040:$0.3849 10080:$0.3819 20160:$0.3769 30240:$0.3729 50400:$0.3629
FDU6N50TU DISTI # FDU6N50TU	ON Semiconductor	Trans MOSFET N-CH 500V 6A 3-Pin(3+Tab) IPAK Rail - Bulk (Alt: FDU6N50TU) RoHS: Compliant Min Qty: 472 Container: Bulk	Americas - 0	472:$0.4959 474:$0.4929 946:$0.4869 2360:$0.4809 4720:$0.4689
FDU6N50TU DISTI # 86K1401	ON Semiconductor	TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,6A I(D),TO-251AA	0	10000:$0.4760 2500:$0.4910 1000:$0.6080 500:$0.6960 100:$0.7880 10:$1.0300 1:$1.2000
FDU6N50TU DISTI # 512-FDU6N50TU	ON Semiconductor	MOSFET 500V N-Channel MOSFET RoHS: Compliant	4015	1:$1.2100 10:$1.0300 100:$0.7880 500:$0.6960 1000:$0.5500 2500:$0.4880 10000:$0.4690
FDU6N50TU	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 6A I(D), 500V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	9586	1000:$0.5000 500:$0.5300 100:$0.5500 25:$0.5700 1:$0.6200

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