FFSM1065A

Mfr. #:: FFSM1065A
製造商:: ON Semiconductor
描述:: Schottky Diodes & Rectifiers 650V 10A SIC SBD
生命週期:: 製造商新產品
數據表:: FFSM1065A 數據表
交貨:: DHL FedEx Ups TNT EMS
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ECAD Model:
更多信息:: FFSM1065A 更多信息

產品屬性
屬性值

製造商：: 安森美半導體

產品分類：: 肖特基二極管和整流器

RoHS：: Y

產品：: 肖特基碳化矽二極管

安裝方式：: 貼片/貼片

包裝/案例：: PQFN-4

如果 - 正向電流：: 10 A

Vrrm - 重複反向電壓：: 650 V

Vf - 正向電壓：: 1.5 V

Ifsm - 正向浪湧電流：: 56 A

配置：: 單身的

技術：: 碳化矽

Ir - 反向電流：: 200 uA

最低工作溫度：: - 55 C

最高工作溫度：: + 175 C

打包：: 捲軸

品牌：: 安森美半導體

Pd - 功耗：: 42 W

產品類別：: 肖特基二極管和整流器

出廠包裝數量：: 3000

子類別：: 二極管和整流器

Vr - 反向電壓：: 650 V

Tags: FFSM, FFS

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FFSM1065A 更多信息

Wide Bandgap SiC Devices: ON Semiconductor Wide Bandgap Silicon Carbide (SiC) Devices incorporate a completely new technology that provides superior switching performance and higher reliability compared to silicon. The system benefits include the highest efficiency, faster-operating frequency, increased power density, reduced EMI, and reduced system size and cost. ON Semiconductor’s SiC portfolio includes 650V and 1200V diodes, 650V and 1200V IGBT and SiC diode Power Integrated Modules (PIMs), 1200V MOSFETs and SiC MOSFET drivers, and AEC-Q100 qualified devices.

650V SiC Schottky Diodes: ON Semiconductor 650V Silicon Carbide (SiC) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. These SiC Schottky diodes feature no reverse recovery current, temperature-independent switching, and excellent thermal performance. The system benefits include high-efficiency, fast operating frequency, high-power density, low EMI, and reduced system size and cost.

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