T2G6000528-Q3

T2G6000528-Q3
Mfr. #:
T2G6000528-Q3
製造商:
Qorvo
描述:
RF JFET Transistors DC-6GHz 28V P3dB 10W @3.3GHz
生命週期:
製造商新產品
數據表:
T2G6000528-Q3 數據表
交貨:
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ECAD Model:
更多信息:
T2G6000528-Q3 更多信息
產品屬性
屬性值
製造商
TriQuint (Qorvo)
產品分類
晶體管 - FET、MOSFET - 單
系列
T2G
打包
托盤
部分別名
1099997
技術
氮化鎵碳化矽
晶體管型
HEMT
Tags
T2G6000528-Q, T2G6000, T2G6, T2G
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor, DC to 6 GHz, 10W, 13.5 dB, 28 V, GaN
T2G GaN HEMT Transistors
QorvoT2G GaN HEMT Transistors are 15W to 30W (P3dB) discrete GaN on SiC HEMT which operate from DC to 3.5GHz and 6.0GHz. These devices are constructed with Qorvo's proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.Learn More
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
型號 製造商 描述 庫存 價格
T2G6000528-Q3
DISTI # 772-T2G6000528-Q3
QorvoRF JFET Transistors DC-6GHz 28V P3dB 10W @3.3GHz
RoHS: Compliant
291
  • 1:$80.4000
  • 25:$68.0500
  • 100:$57.6000
T2G6000528-Q3 28V
DISTI # 772-T2G6000528-Q328V
QorvoRF JFET Transistors DC-6.0GHz 10 Watt 28V GaN
RoHS: Compliant
75
  • 1:$80.4000
  • 25:$68.0500
  • 100:$57.6000
T2G6000528-Q3EVB3
DISTI # 772-T2G6000528-Q3EV
QorvoRF Development Tools 3-3.3GHz Eval Board
RoHS: Compliant
2
  • 1:$875.0000
T2G6000528-Q3, EVAL BOARD
DISTI # 772-T2G6000528-Q3EB
QorvoRF Development Tools DC-6.0GHz 10 Watt 28V GaN Eval Brd
RoHS: Compliant
0
  • 1:$875.0000
圖片 型號 描述
T2G6003028-FL

Mfr.#: T2G6003028-FL

OMO.#: OMO-T2G6003028-FL

RF JFET Transistors DC-6.0GHz 30 Watt 28V GaN Flanged
T2G6000528-Q3

Mfr.#: T2G6000528-Q3

OMO.#: OMO-T2G6000528-Q3

RF JFET Transistors DC-6GHz 28V P3dB 10W @3.3GHz
T2G6001528-Q3

Mfr.#: T2G6001528-Q3

OMO.#: OMO-T2G6001528-Q3

RF JFET Transistors DC-6.0GHz 18 Watt 28V GaN
T2G6001528-Q3

Mfr.#: T2G6001528-Q3

OMO.#: OMO-T2G6001528-Q3-318

RF JFET Transistors DC-6.0GHz 18 Watt 28V GaN
T2G6003028-FL

Mfr.#: T2G6003028-FL

OMO.#: OMO-T2G6003028-FL-318

RF JFET Transistors DC-6.0GHz 30 Watt 28V GaN Flanged
T2G6001528-SG-EVB

Mfr.#: T2G6001528-SG-EVB

OMO.#: OMO-T2G6001528-SG-EVB-1152

RF Development Tools
T2G6001528-SG, EVAL BOAR

Mfr.#: T2G6001528-SG, EVAL BOAR

OMO.#: OMO-T2G6001528-SG-EVAL-BOAR-1190

全新原裝
T2G6003028

Mfr.#: T2G6003028

OMO.#: OMO-T2G6003028-1190

全新原裝
T2G6003028-FL-EVB

Mfr.#: T2G6003028-FL-EVB

OMO.#: OMO-T2G6003028-FL-EVB-1190

全新原裝
T2G6003028-FS-EVB1

Mfr.#: T2G6003028-FS-EVB1

OMO.#: OMO-T2G6003028-FS-EVB1-1190

全新原裝
可用性
庫存:
Available
訂購:
2000
輸入數量:
T2G6000528-Q3的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
1
US$86.40
US$86.40
10
US$82.08
US$820.80
100
US$77.76
US$7 776.00
500
US$73.44
US$36 720.00
1000
US$69.12
US$69 120.00
由於2021年半導體供不應求,低於2021年之前的正常價格,請發詢價確認。
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