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STGW35NB60SD

STGW35NB60SD
Mfr. #:
STGW35NB60SD
製造商:
STMicroelectronics
描述:
IGBT Transistors N Ch 35A 600V
生命週期:
製造商新產品
數據表:
STGW35NB60SD 數據表
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HTML Datasheet:
STGW35NB60SD DatasheetSTGW35NB60SD Datasheet (P4-P6)STGW35NB60SD Datasheet (P7-P9)STGW35NB60SD Datasheet (P10-P12)STGW35NB60SD Datasheet (P13)
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STGW35NB60SD 更多信息 STGW35NB60SD Product Details
產品屬性
屬性值
製造商：
意法半導體
產品分類：
IGBT晶體管
RoHS：
Y
技術：
矽
包裝/案例：
TO-247-3
安裝方式：
通孔
配置：
單身的
集電極-發射極電壓 VCEO 最大值：
600 V
最大柵極發射極電壓：
20 V
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
系列：
STGW35NB60SD
打包：
管子
連續集電極電流 Ic 最大值：
70 A
高度：
20.15 mm
長度：
15.75 mm
寬度：
5.15 mm
品牌：
意法半導體
產品類別：
IGBT晶體管
出廠包裝數量：
600
子類別：
IGBT
商品名：
網狀網
單位重量：
1.340411 oz
Tags
STGW35NB, STGW35N, STGW35, STGW3, STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 70A 200000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
STGW35 Series 600 V 70 A Through Hole N-Channel Silicon IGBT - TO-247-3
***ment14 APAC
IGBT, TO-247; Transistor Type:IGBT; DC Collector Current:70A; Collector Emitter Voltage Vces:1.7V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:70A; Package / Case:TO-247; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:250A; Rise Time:70ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***ical
Trans IGBT Chip N-CH 600V 60A 200000mW 3-Pin(3+Tab) TO-247 Tube
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247AC
***el Electronic
STMICROELECTRONICS STGW30NC60WD IGBT Single Transistor, 60 A, 2.5 V, 200 W, 600 V, TO-247, 3 Pins
***ser
IGBTs Insulated Gate Bipolar Transistor PowerMESH" IGBT
***nell
IGBT, TO-247; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 200W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Te
***(Formerly Allied Electronics)
STGW30NC60WD,IGBT Ultrafast 600V 30A
*** Electronic Components
IGBT Transistors PowerMESH" IGBT
***p One Stop Global
Trans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Rail
***ment14 APAC
IGBT, TO-247; Transistor Type:IGBT; DC Collector Current:70A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:290W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:70A; Current Temperature:25°C; Device Marking:HGTG20N60A4D; Fall Time Typ:32ns; Fall Time tf:32ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:290W; Power Dissipation Pd:290W; Power Dissipation Pd:290W; Pulsed Current Icm:280A; Rise Time:12ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***rchild Semiconductor
The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49339. The diode used in anti-parallel is the development type TA49372.This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies.
***p One Stop Global
Trans IGBT Chip N-CH 600V 80A 250000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
STGW Series Ultra Fast Free Wheeling Diode Through Hole IGBT - TO-247-3
***nell
IGBT, TO-247; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 250W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Te
***p One Stop Global
Trans IGBT Chip N-CH 600V 70A 250000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
STGW45HF Series 600 V 45 A Ultra Fast IGBT Flange Mount - TO-247
***icroelectronics
45 A, 600 V ultrafast IGBT with ultrafast diode
***nell
IGBT, SINGLE, 600V, 70A, TO-247; DC Collector Current: 70A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 250W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: HF Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (07-Jul-2017)
***ark
IGBT Single Transistor, 60 A, 1.9 V, 208 W, 600 V, TO-247, 3 RoHS Compliant: Yes
***ical
Trans IGBT Chip N=-CH 600V 60A 208000mW 3-Pin(3+Tab) TO-247 Rail
***ource
60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode60A, 600V, UFS N
***nell
IGBT,N CH,600V,30A,TO-247.; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.9V; Power Dissipation Pd: 208W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins
***rchild Semiconductor
The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49170. The diode used in anti-parallel with the IGBT is the development type TA49053.The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.Formerly Developmental Type TA49172.
***ical
Trans IGBT Chip N-CH 600V 70A 290000mW 3-Pin(3+Tab) TO-247 Rail
***ark
Insulated-Gate Bipolar Transistor (IGBT); Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:70A; Collector Emitter Saturation Voltage, Vce(sat):1.8V; Power Dissipation, Pd:290W ;RoHS Compliant: Yes
***rchild Semiconductor
The HGTG20N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS, welder and induction heating.
***ment14 APAC
IGBT, N, TO-247; Transistor Type:IGBT; DC Collector Current:70A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:290W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Alternate Case Style:SOT-249; Current Ic Continuous a Max:70A; Current Temperature:25°C; Device Marking:HGTG20N60A4; Fall Time tf:32ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Pin Format:GCE; Power Dissipation Max:290W; Power Dissipation Pd:290W; Power Dissipation Pd:290W; Power Dissipation Ptot Max:290W; Pulsed Current Icm:280A; Rise Time:12ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
型號 製造商 描述 庫存 價格
STGW35NB60SD
DISTI # 497-16202-5-ND		STMicroelectronicsIGBT 600V 70A 200W TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 1020:$3.4860
  • 510:$4.0593
  • 120:$4.6988
  • 30:$5.3603
  • 1:$6.2400
STGW35NB60SD
DISTI # STGW35NB60SD		STMicroelectronicsTrans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Tube (Alt: STGW35NB60SD)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 138
  • 1:€4.6900
  • 10:€3.9900
  • 25:€3.9900
  • 50:€3.9900
  • 100:€3.2900
  • 500:€2.8900
  • 1000:€2.4900
STGW35NB60SD
DISTI # STGW35NB60SD		STMicroelectronicsTrans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Tube - Rail/Tube (Alt: STGW35NB60SD)
RoHS: Compliant
Min Qty: 600
Container: Tube		Americas - 0
  • 600:$3.0900
  • 1200:$2.9900
  • 2400:$2.7900
  • 3600:$2.6900
  • 6000:$2.5900
STGW35NB60SD
DISTI # 511-STGW35NB60SD		STMicroelectronicsIGBT Transistors N Ch 35A 600V
RoHS: Compliant		0
  • 1:$5.5500
  • 10:$4.7200
  • 100:$4.0900
  • 250:$3.8800
  • 500:$3.4800
  • 1000:$2.9400
STGW35NB60SD
DISTI # STGW35NB60SD		STMicroelectronicsTransistor: IGBT,600V,35A,200W,TO247-348
  • 1:$4.9500
  • 3:$4.2600
  • 10:$3.4300
  • 30:$3.0800
STGW35NB60SD
DISTI # 1293658		STMicroelectronicsIGBT, TO-247
RoHS: Compliant		18
  • 2500:$4.4400
  • 1000:$4.6600
  • 500:$5.5300
  • 250:$6.1600
  • 100:$6.4900
  • 10:$7.4900
  • 1:$8.8000
STGW35NB60SD
DISTI # 1293658		STMicroelectronicsIGBT, TO-247
RoHS: Compliant		18
  • 100:£3.6800
  • 10:£4.2500
  • 1:£5.5400
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可用性
庫存:
Available
訂購:
1984
輸入數量:
STGW35NB60SD的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$5.55
US$5.55
10
US$4.72
US$47.20
100
US$4.09
US$409.00
250
US$3.88
US$970.00
500
US$3.48
US$1 740.00
1000
US$2.94
US$2 940.00
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