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IKP08N65F5XKSA1

IKP08N65F5XKSA1
Mfr. #:
IKP08N65F5XKSA1
製造商:
Infineon Technologies
描述:
IGBT Transistors IGBT PRODUCTS
生命週期:
製造商新產品
數據表:
IKP08N65F5XKSA1 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
IKP08N65F5XKSA1 更多信息
產品屬性
屬性值
製造商：
英飛凌
產品分類：
IGBT晶體管
RoHS：
Y
技術：
矽
包裝/案例：
TO-220-3
安裝方式：
通孔
配置：
單身的
集電極-發射極電壓 VCEO 最大值：
650 V
集電極-發射極飽和電壓：
1.6 V
最大柵極發射極電壓：
20 V
25 C 時的連續集電極電流：
18 A
Pd - 功耗：
70 W
最低工作溫度：
- 40 C
最高工作溫度：
+ 175 C
系列：
TRENCHSTOP 5 F5
打包：
管子
品牌：
英飛凌科技
柵極-發射極漏電流：
100 nA
產品類別：
IGBT晶體管
出廠包裝數量：
500
子類別：
IGBT
商品名：
戰壕
第 # 部分別名：
IKP08N65F5 SP000973408
單位重量：
0.211644 oz
Tags
IKP08, IKP0, IKP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 650V 18A 70000mW 3-Pin(3+Tab) TO-220 Tube
***et Europe
Trans IGBT Chip N-CH 650V 18A 3-Pin TO-220 Tube
***i-Key
IGBT 650V 18A 70W PG-TO220-3
***ronik
IGBT 650V 8A 1,6V TO220-3
***ark
IGBT, 650V, 8A, TO220-3
***ukat
650V 18A 70W TO220
***ineon
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Co-packed with Infineons new Rapid Si-diode technology; Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
TRENCHSTOP™ 5 IGBTs
Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.
TRENCHSTOP™ 5 F5 Discrete IGBTs
Infineon TRENCHSTOP™ 5 F5 Discrete IGBTs are optimized for switching >60kHz to deliver optimum efficiency, bridging the gap between MOSFETs and IGBTs. The F5 series features significantly lower switching losses compared to currently leading solutions. Targeting topologies are boost stages, PFC (AC-DC) stages and high voltage DC-DC topologies commonly found in applications like Uninterruptible Power Supplies, UPS, Inverterized Welding Machines and Switch Mode Power Supplies (SMPS). The 650V TRENCHSTOP™ 5 F5 IGBTs are targeted for low inductance designs in combination with SiC diodes to offer 1% higher efficiency compared to 650V TRENCHSTOP™ 5 H5 family. The F5 products require higher design in effort, but rewards are higher.
型號 製造商 描述 庫存 價格
IKP08N65F5XKSA1
DISTI # IKP08N65F5XKSA1-ND		Infineon Technologies AGIGBT 650V 18A 70W PG-TO220-3
RoHS: Compliant
Min Qty: 1
Container: Tube		197In Stock
  • 100:$1.5040
  • 10:$1.8710
  • 1:$2.0800
IKP08N65F5XKSA1
DISTI # IKP08N65F5XKSA1		Infineon Technologies AGTrans IGBT Chip N-CH 650V 18A 3-Pin TO-220 Tube - Rail/Tube (Alt: IKP08N65F5XKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube		Americas - 0
  • 500:$0.9689
  • 1000:$0.9339
  • 2000:$0.8999
  • 3000:$0.8689
  • 5000:$0.8539
IKP08N65F5XKSA1
DISTI # SP000973408		Infineon Technologies AGTrans IGBT Chip N-CH 650V 18A 3-Pin TO-220 Tube (Alt: SP000973408)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1:€1.0549
  • 10:€0.9589
  • 25:€0.8789
  • 50:€0.8439
  • 100:€0.8109
  • 500:€0.7809
  • 1000:€0.7529
IKP08N65F5
DISTI # 726-IKP08N65F5-ES		Infineon Technologies AGIGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
RoHS: Compliant		367
  • 1:$1.9300
  • 10:$1.6400
  • 100:$1.3200
  • 500:$1.1500
  • 1000:$0.9600
  • 2500:$0.8900
  • 5000:$0.8600
IKP08N65F5XKSA1
DISTI # 726-IKP08N65F5XKSA1		Infineon Technologies AGIGBT Transistors IGBT PRODUCTS
RoHS: Compliant		314
  • 1:$1.9800
  • 10:$1.6900
  • 100:$1.3500
  • 500:$1.1800
  • 1000:$0.9760
  • 2500:$0.9080
  • 5000:$0.8750
IKP08N65F5XKSA1
DISTI # IKP08N65F5		Infineon Technologies AG650V 18A 70W TO220
RoHS: Compliant		0
  • 1:€4.9300
  • 10:€1.9300
  • 50:€0.9300
  • 100:€0.8500
IKP08N65F5XKSA1
DISTI # 2363285		Infineon Technologies AGIGBT, 650V, 8A, TO220-3
RoHS: Compliant		0
  • 5:£1.3900
  • 25:£1.2800
  • 100:£1.0200
  • 250:£0.9550
  • 500:£0.8900
圖片 型號 描述
IRGB4060DPBF

Mfr.#: IRGB4060DPBF

OMO.#: OMO-IRGB4060DPBF-INFINEON-TECHNOLOGIES

 IGBT Transistors 600V UltraFast Trench IGBT
可用性
庫存:
314
訂購:
2297
輸入數量:
IKP08N65F5XKSA1的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$1.97
US$1.97
10
US$1.68
US$16.80
100
US$1.34
US$134.00
500
US$1.17
US$585.00
1000
US$0.98
US$976.00
2500
US$0.91
US$2 270.00
5000
US$0.88
US$4 375.00
10000
US$0.84
US$8 410.00
從...開始
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