FFSP1265A

Mfr. #:: FFSP1265A
製造商:: ON Semiconductor
描述:: Schottky Diodes & Rectifiers 650V 12A SIC SBD
生命週期:: 製造商新產品
數據表:: FFSP1265A 數據表
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HTML Datasheet:: FFSP1265A Datasheet FFSP1265A Datasheet (P4-P5)
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更多信息:: FFSP1265A 更多信息

產品屬性
屬性值

製造商：: 安森美半導體

產品分類：: 肖特基二極管和整流器

RoHS：: Y

產品：: 肖特基碳化矽二極管

安裝方式：: 通孔

包裝/案例：: TO-220-2L

如果 - 正向電流：: 12 A

Vrrm - 重複反向電壓：: 650 V

Vf - 正向電壓：: 1.5 V

Ifsm - 正向浪湧電流：: 70 A

配置：: 單身的

技術：: 碳化矽

Ir - 反向電流：: 200 uA

最低工作溫度：: - 55 C

最高工作溫度：: + 175 C

打包：: 管子

品牌：: 安森美半導體

Pd - 功耗：: 115 W

產品類別：: 肖特基二極管和整流器

出廠包裝數量：: 800

子類別：: 二極管和整流器

Tags: FFSP1, FFSP, FFS

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FFSP1265A 描述

***et Europe: Silicon Carbide Schottky Diode 650 V 12 A 2-Pin TO-220 Through Hole Tube

***ure Electronics: FFSP1265A Series 650 V 12 A Through Hole Silicon Carbide Schottky Diode-TO-220-2

***Components: In a Pack of 2, SiC MOSFET, 2 + Tab-Pin TO-220-2L ON Semiconductor FFSP1265A

***ical: Diode Schottky SiC 650V 15A 2-Pin(2+Tab) TO-220 Tube

***Semiconductor: SiC Diode - 650V, 12A, TO-220-2

***i-Key: DIODE SCHOTTKY 650V 15A TO220-2

***an P&S: 650V,12A,Silicon Carbide Schottky Diode

***ark: Sic Schottky Diode, 650V, 12A, To-220-2; Product Range:-; Diode Configuration:single; Repetitive Reverse Voltage Vrrm Max:650V; Continuous Forward Current If:12A; Total Capacitive Charge Qc:40Nc; Diode Case Style:to-220; No. Of Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. SIC SCHOTTKY DIODE, 650V, 12A, TO-220-2; Product Range:-; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:650V; Continuous Forward Current If:12A; Total Capacitive Charge Qc:40nC; Diode Case Style:TO-220; No. of Pins:2 Pin; Junction Temperature Tj Max:175°C; Automotive Qualification Standard:-; SVHC:Lead (27-Jun-2018)

***nell: DIODO SCHOTTKY SIC, 650V, 12A, TO-220-2; Gamma Prodotti:-; Configurazione Diodo:Singolo; Tensione Inversa Ripetitiva Vrrm Max:650V; Corrente Diretta Continua If:12A; Potenza Reattiva Capacitiva Qc:40nC; Modello Involucro Diodo:TO-220; Numero di Pin:2 Pin; Temperatura di Giunzione Tj Max:175°C; Standard di Qualifica Automotive:-; Sostanze Estremamente Preoccupanti (SVHC):Lead (27-Jun-2018)

FFSP1265A 更多信息

FFSP SiC Schottky Diodes: ON Semiconductor FFSP SiC (Silicon Carbide) Schottky Diodes are designed to leverage the advantages of Silicon Carbide over Silicon (Si) devices. FFSP SiC Schottky Diodes feature drastically higher forward surge capability, lower reverse leakage, and no reverse recovery current. These SiC Schottky Diodes also feature temperature independent switching characteristics and excellent thermal performance. This results in improved system efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

Wide Bandgap SiC Devices: ON Semiconductor Wide Bandgap Silicon Carbide (SiC) Devices incorporate a completely new technology that provides superior switching performance and higher reliability compared to silicon. The system benefits include the highest efficiency, faster-operating frequency, increased power density, reduced EMI, and reduced system size and cost. ON Semiconductor’s SiC portfolio includes 650V and 1200V diodes, 650V and 1200V IGBT and SiC diode Power Integrated Modules (PIMs), 1200V MOSFETs and SiC MOSFET drivers, and AEC-Q100 qualified devices.

Silicon Carbide Schottky Diodes: ON Semiconductor Silicon Carbide (SiC) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. SiC Schottky Diodes feature no reverse recovery current, temperature independent switching, and excellent thermal performance. System benefits include high efficiency, fast operating frequency, high power density, low EMI, and reduced system size and cost. ON Semiconductor offers 650V and 1200V devices in a range of current and package options, ideal for next-generation power system designs.

650V SiC Schottky Diodes: ON Semiconductor 650V Silicon Carbide (SiC) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. These SiC Schottky diodes feature no reverse recovery current, temperature-independent switching, and excellent thermal performance. The system benefits include high-efficiency, fast operating frequency, high-power density, low EMI, and reduced system size and cost.

Market price

型號	製造商	描述	庫存	價格
FFSP1265A DISTI # V99:2348_18845032	ON Semiconductor	650V 12A SIC SBD	787	2500:$2.5339 1000:$2.5670 500:$2.9539 250:$3.3170 100:$3.4080 10:$4.0010 1:$5.1810
FFSP1265A DISTI # FFSP1265AOS-ND	ON Semiconductor	DIODE SCHOTTKY 650V 15A TO220-2 RoHS: Compliant Min Qty: 1 Container: Tube	775In Stock	3200:$2.5088 800:$2.9747 100:$3.4944 25:$4.0320 10:$4.2650 1:$4.7500
FFSP1265A DISTI # 28992767	ON Semiconductor	650V 12A SIC SBD	787	3:$5.1810
FFSP1265A DISTI # FFSP1265A	ON Semiconductor	Silicon Carbide Schottky Diode 650 V 12 A 2-Pin TO-220 Through Hole Tube - Rail/Tube (Alt: FFSP1265A) RoHS: Compliant Min Qty: 800 Container: Tube	Americas - 0	8000:$2.1900 1600:$2.2900 3200:$2.2900 4800:$2.2900 800:$2.3900
FFSP1265A DISTI # FFSP1265A	ON Semiconductor	Silicon Carbide Schottky Diode 650 V 12 A 2-Pin TO-220 Through Hole Tube - Bulk (Alt: FFSP1265A) RoHS: Compliant Min Qty: 123 Container: Bulk	Americas - 0	615:$2.4900 1230:$2.4900 123:$2.5900 246:$2.5900 369:$2.5900
FFSP1265A DISTI # 48AC1686	ON Semiconductor	SIC SCHOTTKY DIODE, 650V, 12A, TO-220-2,Product Range:-,Diode Configuration:Single,Repetitive Reverse Voltage Vrrm Max:650V,Continuous Forward Current If:12A,Total Capacitive Charge Qc:40nC,Diode Case Style:TO-220,No. of RoHS Compliant: Yes	800	500:$3.0100 250:$3.3500 100:$3.5400 50:$3.7200 25:$3.9000 10:$4.0800 1:$4.8000
FFSP1265A DISTI # 863-FFSP1265A	ON Semiconductor	Schottky Diodes & Rectifiers 650V 12A SIC SBD RoHS: Compliant	748	1:$4.7400 10:$4.0200 100:$3.4800 250:$3.4000 500:$2.9600 1000:$2.5700 2500:$2.4400
FFSP1265A	ON Semiconductor	RoHS: Not Compliant	800	1000:$2.6800 500:$2.8300 100:$2.9400 25:$3.0700 1:$3.3000
FFSP1265A DISTI # 1723396	ON Semiconductor	MOSFET 650V 12ASIC SBD, TU	798	800:£6.1980
FFSP1265A	ON Semiconductor	650V,12A,Silicon Carbide Schottky Diode	500	1:$6.7100 100:$5.0300 500:$4.3100 1000:$4.0300
FFSP1265A DISTI # 2835588	ON Semiconductor	SIC SCHOTTKY DIODE, 650V, 12A, TO-220-2 RoHS: Compliant	800	1600:$3.8400 800:$4.5500 100:$5.3400 10:$6.5100 1:$7.2600
FFSP1265A DISTI # 2835588	ON Semiconductor	SIC SCHOTTKY DIODE, 650V, 12A, TO-220-2	735	500:£2.1800 250:£2.4200 100:£2.5700 10:£2.9600 1:£3.8800

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