OMO ElectronicOMO Electronic
Expand menu
您好，登錄我的帳戶
0 購物車

IRFB4410PBF

IRFB4410PBF
Mfr. #:
IRFB4410PBF
製造商:
Infineon Technologies
描述:
MOSFET MOSFT 100V 96A 10mOhm 120nC
生命週期:
製造商新產品
數據表:
IRFB4410PBF 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
產品屬性
屬性值
製造商：
英飛凌
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
通孔
包裝/案例：
TO-220-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
100 V
Id - 連續漏極電流：
96 A
Rds On - 漏源電阻：
8 mOhms
Vgs - 柵源電壓：
20 V
Qg - 門電荷：
120 nC
Pd - 功耗：
250 W
配置：
單身的
打包：
管子
高度：
15.65 mm
長度：
10 mm
晶體管類型：
1 N-Channel
寬度：
4.4 mm
品牌：
英飛凌科技
產品類別：
MOSFET
出廠包裝數量：
1000
子類別：
MOSFET
第 # 部分別名：
SP001556060
單位重量：
0.211644 oz
Tags
IRFB4410P, IRFB4410, IRFB44, IRFB4, IRFB, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 8 Milliohms;ID 88A;TO-220AB;PD 200W;VF 1.3V
***ure Electronics
Single N-Channel 100 V 10 mOhm 120 nC HEXFET® Power Mosfet - TO-220-3
***klin Elektronik
INFINEON THT MOSFET NFET 100V 88A 10mΩ 175°C TO-220 IRFB4410PBF
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***p One Stop Global
Trans MOSFET N-CH 100V 88A 3-Pin(3+Tab) TO-220AB Tube
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 1210 8200pF 630volts U2J +/-5%
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: AC-DC
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:96A; On Resistance Rds(On):0.008Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:20V; Threshold Voltage Vgs:4V; Product Range:- Rohs Compliant: Yes
***ment14 APAC
MOSFET, N, 100V, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:96A; Drain Source Voltage Vds:100V; On Resistance Rds(on):10mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:250W; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-78B; Avalanche Single Pulse Energy Eas:220mJ; Capacitance Ciss Typ:5150pF; Current Id Max:88A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; On State resistance @ Vgs = 10V:10mohm; Package / Case:TO-220; Pin Configuration:a; Pin Format:1G, (2+Tab)D, 3S; Power Dissipation Pd:250W; Power Dissipation Pd:250W; Power Dissipation Ptot Max:250W; Pulse Current Idm:380A; Reverse Recovery Time trr Typ:38ns; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
***(Formerly Allied Electronics)
IRFB4410ZPBF N-channel MOSFET Transistor, 97 A, 100 V, 3-Pin TO-220AB
*** Source Electronics
MOSFET N-CH 100V 97A TO-220AB / Trans MOSFET N-CH Si 100V 97A 3-Pin(3+Tab) TO-220AB Tube
***ure Electronics
Single N-Channel 100 V 9 mOhm 120 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 230 W
***roFlash
Power Field-Effect Transistor, 97A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
Benefits: RoHS Compliant | Target Applications: AC-DC; Battery Operated Drive; Consumer Full-Bridge; Full-Bridge; Push-Pull
***ment14 APAC
MOSFET, N, 100V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:97A; Drain Source Voltage Vds:100V; On Resistance Rds(on):9mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:230W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:4410; Current Id Max:96A; N-channel Gate Charge:83nC; Package / Case:TO-220AB; Power Dissipation Pd:230W; Power Dissipation Pd:230mW; Pulse Current Idm:390A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
***eco
Transistor MOSFET Negative Channel 100 Volt 12A 3-Pin(3+Tab) TO-220AB Tube
***emi
N-Channel PowerTrench® MOSFET 100V, 80A, 9mΩ. Recommended replacement is FDP090N10
***Yang
Trans MOSFET N-CH 100V 12A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube
***ure Electronics
N-Channel 100 V 9 mOhm PowerTrench Mosfet - TO-220AB
***r Electronics
Power Field-Effect Transistor, 12A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0075ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 310W; Transistor Case Style: TO-220AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Current Id Max: 80A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Pulse Current Idm: 820A; SMD Marking: FDP3632; Voltage Vgs Max: 4V
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 12Milliohms;ID 80A;TO-220AB;PD 260W;-55deg
***eco
Transistor MOSFET N Channel 100 Volt 80a 3-Pin 3+ Tab TO-220AB
***ure Electronics
Single N-Channel 100 V 15 mOhm 81 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***Yang
Trans MOSFET N-CH 100V 80A 3-Pin(3+Tab) TO-220AB - Rail/Tube
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 260 W
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ment14 APAC
MOSFET, N, 100V, 80A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:100V; On Resistance Rds(on):15mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:260W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:80A; Junction to Case Thermal Resistance A:0.57°C/W; On State resistance @ Vgs = 10V:15ohm; Package / Case:TO-220AB; Power Dissipation Pd:260W; Power Dissipation Pd:260W; Pulse Current Idm:320A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 7.34 Milliohms;ID 80A;TO-220AB;PD 140W;-55de
***ure Electronics
Single N-Channel 75 V 9 mOhm 84 nC HEXFET® Power Mosfet - TO-220-3
***klin Elektronik
INFINEON THT MOSFET NFET 75V 80A 9mΩ 175°C TO-220 IRFB3607PBF
***ineon SCT
75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***Yang
Trans MOSFET N-CH 75V 80A 3-Pin(3+Tab) TO-220AB - Rail/Tube
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 140 W
***ineon
Benefits: RoHS Compliant | Target Applications: AC-DC; Battery Operated Drive
***ment14 APAC
MOSFET, N, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:75V; On Resistance Rds(on):7.34mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:140W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:80A; Package / Case:TO-220AB; Power Dissipation Pd:140W; Pulse Current Idm:310A; Termination Type:Through Hole; Voltage Vds Typ:75V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***(Formerly Allied Electronics)
Fairchild HUF75545P3 N-channel MOSFET Transistor; 75 A; 55 V; 3-Pin TO-220AB
***ure Electronics
N-Channel 80 V 0.01 Ohm Flange Mount UltraFET Power Mosfet - TO-220AB
***emi
N-Channel UltraFET Power MOSFET 80V, 75A, 10mΩ
***Yang
Trans MOSFET N-CH 80V 75A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube
***nell
MOSFET,N CH,80V,75A,TO220AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 75A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.01ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Diss
***r Electronics
Power Field-Effect Transistor, 75A I(D), 80V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***emi
N-Channel PowerTrench® MOSFET 75V, 80A, 6mΩ
***ure Electronics
N-Channel 75 V 6 mOhm Power Trench Mosfet - TO-220
***Yang
Trans MOSFET N-CH 75V 16A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube
***inecomponents.com
TO220AB, SINGLE, NCH, 75V, 0.0063 OHM POWERTRENCH MOSFET
***enic
75V 16A 255W 6m´Î@10V80A 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
***r Electronics
Power Field-Effect Transistor, 80A I(D), 75V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
型號 製造商 描述 庫存 價格
IRFB4410PBF
DISTI # V99:2348_13889751		Infineon Technologies AGTrans MOSFET N-CH 100V 88A 3-Pin(3+Tab) TO-220AB Tube287
  • 2000:$0.8507
  • 1000:$0.9452
  • 500:$1.0502
  • 100:$1.3051
  • 10:$1.8787
  • 1:$2.1595
IRFB4410PBF
DISTI # IRFB4410PBF-ND		Infineon Technologies AGMOSFET N-CH 100V 96A TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		1452In Stock
  • 1000:$1.3039
  • 500:$1.5737
  • 100:$2.0233
  • 10:$2.5180
  • 1:$2.7900
IRFB4410PBF
DISTI # 31087006		Infineon Technologies AGTrans MOSFET N-CH 100V 88A 3-Pin(3+Tab) TO-220AB Tube34305
  • 650:$0.8784
  • 250:$0.9168
  • 50:$1.0080
IRFB4410PBF
DISTI # 30609309		Infineon Technologies AGTrans MOSFET N-CH 100V 88A 3-Pin(3+Tab) TO-220AB Tube3000
  • 200:$2.1292
  • 100:$2.4225
  • 50:$2.8560
  • 10:$3.5063
  • 7:$3.9780
IRFB4410PBF
DISTI # 26198065		Infineon Technologies AGTrans MOSFET N-CH 100V 88A 3-Pin(3+Tab) TO-220AB Tube287
  • 100:$1.3051
  • 10:$1.8787
  • 7:$2.1595
IRFB4410PBF
DISTI # IRFB4410PBF		Infineon Technologies AGTrans MOSFET N-CH 100V 88A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRFB4410PBF)
RoHS: Compliant
Min Qty: 1
Container: Tube		Americas - 741
  • 1:$1.3409
  • 10:$1.1999
  • 25:$1.1969
  • 50:$1.1939
  • 100:$0.9519
  • 500:$0.8299
  • 1000:$0.8269
IRFB4410PBF
DISTI # SP001556060		Infineon Technologies AGTrans MOSFET N-CH 100V 88A 3-Pin(3+Tab) TO-220AB (Alt: SP001556060)
RoHS: Compliant
Min Qty: 1		Europe - 3785
  • 1:€1.3519
  • 10:€1.2099
  • 25:€1.2069
  • 50:€1.2039
  • 100:€0.9599
  • 500:€0.8349
  • 1000:€0.7519
IRFB4410PBF
DISTI # IRFB4410PBF		Infineon Technologies AGTrans MOSFET N-CH 100V 88A 3-Pin(3+Tab) TO-220AB (Alt: IRFB4410PBF)
RoHS: Compliant
Min Qty: 1000		Asia - 0
    IRFB4410PBF
    DISTI # 97K1977    		Infineon Technologies AGMOSFET Transistor, N Channel, 96 A, 100 V, 0.008 ohm, 20 V, 4 V RoHS Compliant: Yes1189
    • 1:$2.6500
    • 10:$2.2600
    • 100:$1.8000
    • 500:$1.5800
    • 1000:$1.3100
    • 2500:$1.2200
    IRFB4410PBF.
    DISTI # 27AC6769    		Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:96A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.008ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:4V,Power Dissipation Pd:250W,No. of Pins:3Pins RoHS Compliant: Yes0
    • 1:$2.6500
    • 10:$2.2600
    • 100:$1.8000
    • 500:$1.5800
    • 1000:$1.3100
    • 2500:$1.2200
    IRFB4410PBF
    DISTI # 70017255    		Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 100V,RDS(ON) 8 Milliohms,ID 88A,TO-220AB,PD 200W,VF 1.3V
    RoHS: Compliant    		0
    • 3000:$4.9300
    IRFB4410PBF
    DISTI # 942-IRFB4410PBF    		Infineon Technologies AGMOSFET MOSFT 100V 96A 10mOhm 120nC
    RoHS: Compliant    		1140
    • 1:$2.4100
    • 10:$2.0500
    • 100:$1.6400
    • 500:$1.4400
    • 1000:$1.1900
    • 2000:$1.1100
    IRFB4410PBFInternational RectifierPower Field-Effect Transistor, 75A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    RoHS: Compliant    		1102
    • 1000:$1.0800
    • 500:$1.1400
    • 100:$1.1800
    • 25:$1.2300
    • 1:$1.3300
    IRFB4410PBFInternational RectifierMOSFET Transistor, N-Channel, TO-220AB21
      IRFB4410PBF
      DISTI # 6504766P      		Infineon Technologies AGMOSFET N-CHANNEL 100V 88A TO220AB, TU2855
      • 25:£0.5300
      IRFB4410PBF
      DISTI # 6504766      		Infineon Technologies AGMOSFET N-CHANNEL 100V 88A TO220AB, PK275
      • 5:£0.5620
      • 25:£0.5300
      IRFB4410PBF
      DISTI # IRFB4410PBF      		Infineon Technologies AGTransistor: N-MOSFET,unipolar,100V,96A,250W,TO220AB405
      • 1:$1.3800
      • 3:$1.2500
      • 10:$1.0300
      • 50:$0.9100
      IRFB4410PBF
      DISTI # TMOSP12129      		Infineon Technologies AGN-CH 100V 96A 10mOhm TO220-3
      RoHS: Compliant      		Stock DE - 1150Stock US - 0
      • 50:$1.0740
      • 150:$1.0120
      • 250:$0.9509
      • 550:$0.8588
      • 1250:$0.8282
      IRFB4410PBFInfineon Technologies AGINSTOCK2932
        IRFB4410PBF
        DISTI # C1S322000600021        		Infineon Technologies AGMOSFETs3000
        • 2000:$1.6000
        • 200:$1.6700
        • 100:$1.9000
        • 50:$2.2400
        • 10:$2.7500
        • 1:$3.1200
        IRFB4410PBF
        DISTI # C1S322000488809        		Infineon Technologies AGMOSFETs287
        • 100:$1.3051
        • 10:$1.8787
        IRFB4410PBF
        DISTI # 9052046        		Infineon Technologies AGMOSFET, N, 100V, TO-220
        RoHS: Compliant        		1331
        • 1:£1.7500
        • 10:£1.4500
        • 100:£1.3000
        • 250:£1.2000
        • 500:£1.1200
        IRFB4410PBF
        DISTI # XSKDRABV0030608        		INF 
        RoHS: Compliant        		50
        • 650:$1.0700
        IRFB4410PBF
        DISTI # 9052046        		Infineon Technologies AGMOSFET, N, 100V, TO-220
        RoHS: Compliant        		192
        • 1:$3.8200
        • 10:$3.2500
        • 100:$2.6000
        • 500:$2.2800
        • 1000:$1.8800
        • 2000:$1.7600
        圖片 型號 描述
        MAX907CPA+

        Mfr.#: MAX907CPA+

        OMO.#: OMO-MAX907CPA-

        		 Analog Comparators Dual TTL Comparator
        MCP6002-I/P

        Mfr.#: MCP6002-I/P

        OMO.#: OMO-MCP6002-I-P

        		 Operational Amplifiers - Op Amps Dual 1.8V 1MHz
        IR2010PBF

        Mfr.#: IR2010PBF

        OMO.#: OMO-IR2010PBF

        		 Gate Drivers Hi&Lw Sd Drvr
        MC34152PG

        Mfr.#: MC34152PG

        OMO.#: OMO-MC34152PG

        		 Gate Drivers 1.5A High Speed Dual Non-Inverting MOSFET
        MAX3053ESA+

        Mfr.#: MAX3053ESA+

        OMO.#: OMO-MAX3053ESA-

        		 CAN Interface IC 80V Fault-Protected 2Mbps
        ULN2803A

        Mfr.#: ULN2803A

        OMO.#: OMO-ULN2803A

        		 Darlington Transistors Eight NPN Array
        HCPL-817-56AE

        Mfr.#: HCPL-817-56AE

        OMO.#: OMO-HCPL-817-56AE

        		 Transistor Output Optocouplers 5000 Vrms 50mA
        SN74HC08N

        Mfr.#: SN74HC08N

        OMO.#: OMO-SN74HC08N

        		 Logic Gates Quad 2-Input.
        SN74HC132N

        Mfr.#: SN74HC132N

        OMO.#: OMO-SN74HC132N

        		 Logic Gates Quad Schmitt Trigger
        CD74HC4051E

        Mfr.#: CD74HC4051E

        OMO.#: OMO-CD74HC4051E

        		 Multiplexer Switch ICs High Spd CMOS Analog
        可用性
        庫存:
        Available
        訂購:
        1984
        輸入數量:
        IRFB4410PBF的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
        參考價格（美元）
        數量
        單價
        小計金額
        1
        US$2.40
        US$2.40
        10
        US$2.04
        US$20.40
        100
        US$1.63
        US$163.00
        500
        US$1.43
        US$715.00
        1000
        US$1.18
        US$1 180.00
        由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
        從...開始
        最新產品
        More Newest Products
        Top