FCH165N60E

Mfr. #:: FCH165N60E
製造商:: ON Semiconductor
描述:: MOSFET N-CH 600V 23A TO247
生命週期:: 製造商新產品
數據表:: FCH165N60E 數據表
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更多信息:: FCH165N60E 更多信息

產品屬性
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Tags: FCH16, FCH1, FCH

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We provide 90-360 days warranty.

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FCH165N60E 描述

***Semiconductor: N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 23 A, 165 mΩ, TO-247

***ark: SuperFET2 600V 165mohm slow version - TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB

***et: Trans MOSFET N-CH 600V 23A 3-Pin TO-247 Tube

***ment14 APAC: MOSFET, N-CH, 600V, 23A, TO-247-3

***ical: Trans MOSFET N-CH 600V 23A

***i-Key: MOSFET N-CH 600V TO247

***ukat: N-Ch 600V 23A 227W 0,165R TO247

***nell: MOSFET, CAN-N, 600V, 23A, TO-247-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:23A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.132ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.5V; Dissipazione di Potenza Pd:227W; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:SuperFET II Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2018)

***rchild Semiconductor: SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.Consequently, SuperFET II MOSFET easy-drive series offers slightly slower rise and fall times compared to the SuperFET IIMOSFET series. Noted by the “E” part number suffix, this family helps manage EMI issues and allows for easier designimplementation. For faster switching in applications where switching losses must be at an absolute minimum, pleaseconsider the SuperFET II MOSFET series.

FCH165N60E 更多信息

SuperFET® II Power MOSFETs: ON Semiconductor SuperFET® II Power MOSFETs are a new proprietary generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. These SuperFET® II MOSFETs are suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.Learn More

Market price

型號	製造商	描述	庫存	價格
FCH165N60E DISTI # V99:2348_14141239	ON Semiconductor	SUPERFET2 600V 165MOHM SLOW VE	450	2700:$1.7620 900:$2.0830 450:$2.3420 25:$2.5700 10:$2.8560 1:$3.6927
FCH165N60E DISTI # V36:1790_14141239	ON Semiconductor	SUPERFET2 600V 165MOHM SLOW VE	0	450000:$1.5500 225000:$1.5540 45000:$2.1010 4500:$3.1910 450:$3.3800
FCH165N60E DISTI # FCH165N60EOS-ND	ON Semiconductor	MOSFET N-CH 600V 23A TO247 RoHS: Compliant Min Qty: 1 Container: Tube	438In Stock	5400:$1.7190 2700:$1.7861 900:$2.2293 450:$2.4845 25:$3.0216 10:$3.1960 1:$3.5600
FCH165N60E DISTI # 26938579	ON Semiconductor	SUPERFET2 600V 165MOHM SLOW VE	9000	450:$3.3800
FCH165N60E DISTI # 31601867	ON Semiconductor	SUPERFET2 600V 165MOHM SLOW VE	450	4:$3.6927
FCH165N60E DISTI # FCH165N60E	ON Semiconductor	SUPERFET2 600V 165MOHM SLOW VERSION - Rail/Tube (Alt: FCH165N60E) RoHS: Compliant Min Qty: 450 Container: Tube	Americas - 0	4500:$1.4900 450:$1.5900 900:$1.5900 1800:$1.5900 2700:$1.5900
FCH165N60E DISTI # 512-FCH165N60E	ON Semiconductor	MOSFET 600V 23A N-Chnl SuperFET Easy-Drive RoHS: Compliant	419	1:$3.3800 10:$2.8700 100:$2.4900 250:$2.3600 500:$2.1200 1000:$1.7900 2500:$1.7000

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