IPI045N10N3 G

Mfr. #:: IPI045N10N3 G
製造商:: Infineon Technologies
描述:: IGBT Transistors MOSFET N-Ch 100V 100A I2PAK-3 OptiMOS 3
生命週期:: 製造商新產品
數據表:: IPI045N10N3 G 數據表
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ECAD Model:

產品屬性
屬性值

製造商: 英飛凌科技

產品分類: 晶體管 - FET、MOSFET - 單

系列: OptiMOS 3

打包: 管子

部分別名: IPI045N10N3GXK IPI045N10N3GXKSA1 SP000683068

單位重量: 0.084199 oz

安裝方式: 通孔

商品名: 優化MOS

包裝盒: I2PAK-3

技術: 矽

通道數: 1 Channel

配置: 單身的

晶體管型: 1 N-Channel

鈀功耗: 214 W

最高工作溫度: + 175 C

最低工作溫度: - 55 C

秋季時間: 14 ns

上升時間: 59 ns

VGS-柵極-源極-電壓: 20 V

Id 連續漏極電流: 100 A

Vds-漏-源-擊穿電壓: 100 V

Rds-On-Drain-Source-Resistance: 4.5 mOhms

晶體管極性: N通道

典型關斷延遲時間: 48 ns

典型開啟延遲時間: 27 ns

通道模式: 增強

Tags: IPI045N10N3G, IPI045N10N3, IPI045, IPI04, IPI0, IPI

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

Market price

型號	製造商	描述	庫存	價格
IPI045N10N3GXKSA1 DISTI # IPI045N10N3GXKSA1-ND	Infineon Technologies AG	MOSFET N-CH 100V 100A TO262-3 RoHS: Compliant Min Qty: 1 Container: Tube	206In Stock	1000:$1.7815 500:$2.1123 100:$2.6086 10:$3.1810 1:$3.5600
IPI045N10N3GXK DISTI # IPI045N10N3GXK-ND	Infineon Technologies AG	MOSFET N-CH 100V 100A TO262-3 RoHS: Compliant Container: Tube	Limited Supply - Call
IPI045N10N3GXK DISTI # IPI045N10N3GXKSA1	Infineon Technologies AG	Trans MOSFET N-CH 100V 100A 3-Pin(3+Tab) TO-262 - Rail/Tube (Alt: IPI045N10N3GXKSA1) RoHS: Compliant Min Qty: 500 Container: Tube	Americas - 500	500:$1.5900 1000:$1.5900 2000:$1.4900 3000:$1.3900 5000:$1.3900
IPI045N10N3GXKSA1	Infineon Technologies AG	Power Field-Effect Transistor, 100A I(D), 100V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Compliant	5061	1000:$1.4000 500:$1.4700 100:$1.5300 25:$1.5900 1:$1.7200
IPI045N10N3 G	Infineon Technologies AG	RoHS: Not Compliant	90	1000:$1.4000 500:$1.4700 100:$1.5300 25:$1.5900 1:$1.7200
IPI045N10N3 G DISTI # 726-IPI045N10N3G	Infineon Technologies AG	MOSFET N-Ch 100V 100A I2PAK-3 OptiMOS 3 RoHS: Compliant	760	1:$3.0700 10:$2.6100 100:$2.2600 250:$2.1500 500:$1.9300
IPI045N10N3GXKSA1 DISTI # 726-IPI045N10N3GXKSA	Infineon Technologies AG	MOSFET N-Ch 100V 100A I2PAK-3 OptiMOS 3 RoHS: Compliant	2000	1:$3.0700 10:$2.6100 100:$2.2600 250:$2.1500 500:$1.9300 1000:$1.6200

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