QPD1008

Mfr. #:: QPD1008
製造商:: Qorvo
描述:: RF JFET Transistors DC-3.2GHz 120W 50V SSG 17.5dB GaN
生命週期:: 製造商新產品
數據表:: QPD1008 數據表
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更多信息:: QPD1008 更多信息

產品屬性
屬性值

製造商：: 科沃

產品分類：: 射頻 JFET 晶體管

RoHS：: Y

晶體管類型：: HEMT

技術：: 氮化鎵碳化矽

獲得：: 17.5 dB

晶體管極性：: N通道

Vds - 漏源擊穿電壓：: 50 V

Vgs - 柵源擊穿電壓：: 145 V

Id - 連續漏極電流：: 4 A

輸出功率：: 162 W

最低工作溫度：: - 40 C

最高工作溫度：: + 85 C

Pd - 功耗：: 127 W

安裝方式：: 貼片/貼片

包裝/案例：: NI-360

打包：: 托盤

配置：: 單身的

工作頻率：: 3.2 GHz

工作溫度範圍：: - 40 C to + 85 C

系列：: QPD

品牌：: 科沃

開發套件：: QPD1008PCB401

濕氣敏感：: 是的

產品類別：: 射頻 JFET 晶體管

出廠包裝數量：: 25

子類別：: 晶體管

Vgs th - 柵源閾值電壓：: - 2.8 V

Tags: QPD100, QPD10, QPD1, QPD

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

QPD1008 描述

***W: RF Power Transistor, DC to 4.0 GHz, 125 W, 50 V, GaN, NI-360 ceramic

***hardson RFPD: RF POWER TRANSISTOR

QPD1008 更多信息

QPD GaN RF Transistors: Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.

Market price

型號	製造商	描述	庫存	價格
QPD1008L DISTI # QPD1008L-ND	RF Micro Devices Inc	RF TRANSISTOR 125W 50V NI-360 RoHS: Compliant Container: Bulk	Limited Supply - Call
QPD1008 DISTI # 772-QPD1008	Qorvo	RF JFET Transistors DC-3.2GHz 120W 50V SSG 17.5dB GaN RoHS: Compliant	50	1:$200.0000 25:$173.0000
QPD1008L DISTI # 772-QPD1008L	Qorvo	RF JFET Transistors DC-3.2GHz 120W 50V SSG 17.5dB GaN RoHS: Compliant	43	1:$200.0000 25:$173.0000
QPD1008 EVB DISTI # 772-QPD1008EB	Qorvo	RF Development Tools 960-1215MHz GaN Eval Board RoHS: Compliant	3	1:$875.0000

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