MRF8S7235NR3

Mfr. #:: MRF8S7235NR3
製造商:: NXP / Freescale
描述:: RF MOSFET Transistors HV8 700MHZ OM780-2
生命週期:: 製造商新產品
數據表:: MRF8S7235NR3 數據表
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HTML Datasheet:: MRF8S7235NR3 Datasheet MRF8S7235NR3 Datasheet (P4-P6)MRF8S7235NR3 Datasheet (P7-P9)MRF8S7235NR3 Datasheet (P10-P12)MRF8S7235NR3 Datasheet (P13)
ECAD Model:

產品屬性
屬性值

製造商：: 恩智浦

產品分類：: 射頻 MOSFET 晶體管

RoHS：: Y

技術：: 矽

獲得：: 21.8 dB

輸出功率：: 63 W

最高工作溫度：: + 150 C

安裝方式：: 貼片/貼片

包裝/案例：: OM-780-2

打包：: 捲軸

配置：: 單身的

工作頻率：: 728 MHz to 768 MHz

系列：: MRF8S7235N

品牌：: 恩智浦/飛思卡爾

濕氣敏感：: 是的

產品類別：: 射頻 MOSFET 晶體管

出廠包裝數量：: 250

子類別：: MOSFET

第 # 部分別名：: 935314786528

單位重量：: 0.108683 oz

Tags: MRF8S7, MRF8S, MRF8, MRF

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MRF8S7235NR3 描述

***W: RF Power Transistor,728 to 768 MHz, 260 W, Typ Gain in dB is 20 @ 728 MHz, 28 V, LDMOS, SOT1823

*** Semiconductors SCT: Single W-CDMA Lateral N-Channel RF Power MOSFET, 728-768 MHz, 63 W Avg., 28 V, FM2F, RoHS

***ical: Trans RF MOSFET N-CH 70V 3-Pin OM-780 EP

*** Electronic Components: RF MOSFET Transistors HV8 700MHZ OM780-2

***el Electronic: LDO Voltage Regulators ANA LDO REG

***(Formerly Allied Electronics): IRLL110TRPBF N-channel MOSFET Transistor; 1.5 A; 100 V; 3 + Tab-Pin SOT-223

***eco: Trans MOSFET N Channel 100 Volt 1.5A 4-Pin (3+Tab) SOT-223 Tape and Reel

***ure Electronics: Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - SOT-223-3

*** Source Electronics: Trans MOSFET N-CH 100V 1.5A 4-Pin(3+Tab) SOT-223 T/R / MOSFET N-CH 100V 1.5A SOT223

***nsix Microsemi: Power Field-Effect Transistor, 1.5A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

***ure Electronics: P-Channel 20 V 38 mO 9.1 nC SMT Enhancement Mode Mosfet - SOT-23

***ical: Trans MOSFET P-CH 20V 4.3A Automotive 3-Pin SOT-23 T/R

***nell: MOSFET, P-CH, -20V, SOT-23-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -4.3A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.025ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1.4V; Power Dissipation Pd: 800mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***ure Electronics: Single N-Channel 200 V 0.18 Ohms Surface Mount Power Mosfet - D2PAK-3

***ark: N CHANNEL MOSFET, 200V, 17A SMD-220; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:17A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:5V; Gate Source Threshold Voltage Max:2V RoHS Compliant: No

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 17A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ure Electronics: N-Channel 50 V 16 A 0.047 Ohm Surface Mount Power Mosfet - TO-252AA

***emi: N-Channel Logic Level Power MOSFET 50V, 16A, 47mΩ

***ment14 APAC: MOSFET, N-CH, 50V, 16A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Source Voltage Vds:50V; On Resistance

***roFlash: Power Field-Effect Transistor, 16A I(D), 50V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***rchild Semiconductor: These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, switching regulators, switching converters, motor relay drivers and emitter switches for bipolar transistors. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages. Formerly developmental type TA09871.

***emi: Dual N-Channel PowerTrench® MOSFET, 2.5V Specified, 20V, 6.5A, 30mΩ

***ure Electronics: Dual N-Channel 20 V 30 mOhm Surface Mount PowerTrench Mosfet - SOIC-8

***Yang: Transistor MOSFET Array Dual N-CH 20V 6.5A 8-Pin SOIC T/R - Product that comes on tape, but is not r

***el Electronic: ON SEMICONDUCTOR - FDS9926A - Dual MOSFET, Dual N Channel, 6.5 A, 20 V, 0.025 ohm, 4.5 V, 1 V

***ment14 APAC: MOSFET, DUAL, N, SMD, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:6.5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):30mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:6.5A; Package / Case:SOIC; Power Dissipation Pd:2W; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:4.5V

***rchild Semiconductor: These N-Channel 2.5V specified MOSFETs use Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 10V).

***hard Electronics: Mosfet; Power; N-ch; Vdss 100V; Rds(on) 0.54 Ohm; Id 4.3A; TO-252AA; Pd 25W; Vgs +/-10V

***ure Electronics: Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - TO-252

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ark: N Channel Mosfet, 100V, 4.3A, D-Pak; Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.3A; On Resistance Rds(On):0.54Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:5V Rohs Compliant: No

***ment14 APAC: MOSFET, N, 100V, 4.3A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:4.3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):540mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:25W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:4.3A; Junction to Case Thermal Resistance A:5°C/W; On State resistance @ Vgs = 10V:540mohm; Package / Case:DPAK; Power Dissipation Pd:25W; Power Dissipation Pd:25W; Pulse Current Idm:17A; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:10V; Voltage Vgs Rds on Measurement:5V; Voltage Vgs th Max:2V

Market price

型號	製造商	描述	庫存	價格
MRF8S7235NR3 DISTI # 25967907	NXP Semiconductors	Trans RF MOSFET N-CH 70V 3-Pin OM-780 EP T/R RoHS: Compliant	220	1:$143.4600
MRF8S7235NR3 DISTI # MRF8S7235NR3-ND	NXP Semiconductors	FET RF 70V 728MHZ OM780-2 RoHS: Compliant Min Qty: 250 Container: Tape & Reel (TR)	Temporarily Out of Stock	250:$96.3549
MRF8S7235NR3 DISTI # MRF8S7235NR3	Avnet, Inc.	Trans MOSFET N-CH 70V 3-Pin OM-780 T/R - Tape and Reel (Alt: MRF8S7235NR3) RoHS: Compliant Min Qty: 250 Container: Reel	Americas - 0	250:$105.5900 500:$101.3900 1000:$97.4900 1500:$93.8900 2500:$92.0900
MRF8S7235NR3 DISTI # 841-MRF8S7235NR3	NXP Semiconductors	RF MOSFET Transistors HV8 700MHZ OM780-2 RoHS: Compliant	0	250:$94.1900
MRF8S7235NR3 DISTI # MRF8S7235NR3	NXP Semiconductors	RF POWER TRANSISTOR RoHS: Compliant	0	250:$108.6700

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