H11D1W

H11D1W
Mfr. #:
H11D1W
製造商:
ON Semiconductor / Fairchild
描述:
Transistor Output Optocouplers Hi Volt Optocoupler Phototransistor
生命週期:
製造商新產品
數據表:
H11D1W 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
H11D1W DatasheetH11D1W Datasheet (P4-P6)H11D1W Datasheet (P7-P8)
ECAD Model:
產品屬性
屬性值
製造商:
安森美半導體
產品分類:
晶體管輸出光耦合器
RoHS:
Y
包裝/案例:
PDIP-6
輸出類型:
NPN光電晶體管
通道數:
1 Channel
如果 - 正向電流:
80 mA
最大集電極發射極電壓:
300 V
最大集電極電流:
100 mA
隔離電壓:
5300 Vrms
最大集電極發射極飽和電壓:
0.4 V
Vf - 正向電壓:
1.5 V
Vr - 反向電壓:
6 V
Pd - 功耗:
300 mW
最低工作溫度:
- 55 C
最高工作溫度:
+ 100 C
打包:
大部分
配置:
1 Channel
高度:
5.08 mm
長度:
8.89 mm
寬度:
6.86 mm
品牌:
安森美半導體/飛兆半導體
產品類別:
晶體管輸出光耦合器
出廠包裝數量:
1000
子類別:
光耦合器
Tags
H11D1, H11D, H11
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ser
OptoCouplers & OptoIsolators Hi Volt Optocoupler Phototransistor
***i-Key
OPTOISO 5.3KV TRANS W/BASE 6DIP
型號 製造商 描述 庫存 價格
H11D1W
DISTI # H11D1W-ND
ON SemiconductorOPTOISO 5.3KV TRANS W/BASE 6DIP
RoHS: Compliant
Min Qty: 1000
Container: Tube
Limited Supply - Call
    H11D1W
    DISTI # 512-H11D1W
    ON SemiconductorTransistor Output Optocouplers Hi Volt Optocoupler Phototransistor
    RoHS: Compliant
    0
      圖片 型號 描述
      H11F3W

      Mfr.#: H11F3W

      OMO.#: OMO-H11F3W

      MOSFET Output Optocouplers Optocoupler FET Bilateral analog
      H11AA3S1(TA)

      Mfr.#: H11AA3S1(TA)

      OMO.#: OMO-H11AA3S1-TA--EVERLIGHT-ELECTRONICS

      Transistor Output Optocouplers Optocouplers
      H1164NLT

      Mfr.#: H1164NLT

      OMO.#: OMO-H1164NLT-PULSE-ELECTRONICS

      Audio & Signal Transformers Transformers Audio & Signal 40P SOIC TRANSFORMER
      H11AA1SR2M-CUT TAPE

      Mfr.#: H11AA1SR2M-CUT TAPE

      OMO.#: OMO-H11AA1SR2M-CUT-TAPE-1190

      全新原裝
      H11A-X007

      Mfr.#: H11A-X007

      OMO.#: OMO-H11A-X007-1190

      全新原裝
      H11A8173SD//////////

      Mfr.#: H11A8173SD//////////

      OMO.#: OMO-H11A8173SD--1190

      全新原裝
      H11A817B300W

      Mfr.#: H11A817B300W

      OMO.#: OMO-H11A817B300W-ON-SEMICONDUCTOR

      OPTOISO 5.3KV TRANSISTOR 4DIP
      H11A817X

      Mfr.#: H11A817X

      OMO.#: OMO-H11A817X-1190

      全新原裝
      H11AA4SMTR

      Mfr.#: H11AA4SMTR

      OMO.#: OMO-H11AA4SMTR-1190

      全新原裝
      H11AV2AM

      Mfr.#: H11AV2AM

      OMO.#: OMO-H11AV2AM-ON-SEMICONDUCTOR

      OPTOISO 7.5KV TRANS W/BASE 6DIP
      可用性
      庫存:
      Available
      訂購:
      4500
      輸入數量:
      H11D1W的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
      從...開始
      最新產品
      • Gate Drivers
        The ON Semiconductor IGBT / MOSFET drive optocoupler series provides isolation for safety regulations.
      • NCP137 700 mA LDO Regulators
        ON Semiconductor's NCP137 700 mA very low dropout bias rail regulators are ideal for space constrained, noise sensitive applications.
      • NCP114 Low Dropout Regulators
        ON Semiconductor's NCP114 is a high performance, 300 mA, low dropout, linear regulator. This device delivers very high PSRR (over 75 dB at 1 kHz) and excellent dynamic performance as load/li
      • LC717A00AR Touch Sensor
        These high performance Capacitance-Digital-Converter LSI for electrostatic capacitive touch sensors feature 8-input capacitance.
      • Compare H11D1W
        H11D1 vs H11D1DIP vs H11D1X007
      • FDMQ86530L Quad-MOSFET
        ON Semiconductor’s FDMQ86530L solution improves the conduction loss and efficiency of the conventional diode bridge, providing a ten-fold improvement in power dissipation.
      Top