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IRG4BC40UPBF

IRG4BC40UPBF
Mfr. #:
IRG4BC40UPBF
製造商:
Infineon Technologies
描述:
IGBT Transistors 600V UltraFast 8-60kHz
生命週期:
製造商新產品
數據表:
IRG4BC40UPBF 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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HTML Datasheet:
IRG4BC40UPBF DatasheetIRG4BC40UPBF Datasheet (P4-P6)IRG4BC40UPBF Datasheet (P7-P8)
ECAD Model:
更多信息:
IRG4BC40UPBF 更多信息
產品屬性
屬性值
製造商：
英飛凌
產品分類：
IGBT晶體管
RoHS：
Y
技術：
矽
包裝/案例：
TO-220-3
安裝方式：
通孔
配置：
單身的
集電極-發射極電壓 VCEO 最大值：
600 V
集電極-發射極飽和電壓：
2.1 V
最大柵極發射極電壓：
20 V
25 C 時的連續集電極電流：
40 A
Pd - 功耗：
160 W
最低工作溫度：
- 55 C
打包：
管子
高度：
8.77 mm
長度：
10.54 mm
寬度：
4.69 mm
品牌：
英飛凌科技
產品類別：
IGBT晶體管
出廠包裝數量：
1000
子類別：
IGBT
第 # 部分別名：
SP001541308
單位重量：
0.211644 oz
Tags
IRG4BC40U, IRG4BC4, IRG4BC, IRG4B, IRG4, IRG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Electronics
IGBT IRG4BC40UPBF IGBT 600V 40A 160W Through Hole TO-220AB 20A/600V TO-220AB
***p One Stop
Trans IGBT Chip N-CH 600V 40A 160000mW 3-Pin(3+Tab) TO-220AB Tube
***ineon SCT
600V UltraFast 8-60 kHz Discrete IGBT in a TO-220AB package, TO220-3, RoHS
***ure Electronics
IRG4BC40UPbF Series 600 V 20 A N-Channel Ultrafast Speed IGBT - TO-220AB
***ineon
Target Applications: Air Conditioner; Dishwasher; Fan; PFC; Pump; Washing Machine
***itex
Transistor; IGBT; 600V; 40A; 160W; -55+150 deg.C; THT; TO220
***roFlash
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***ment14 APAC
IGBT, TO-220; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:2.4V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:40A; Current Temperature:25°C; Device Marking:IRG4BC40UPBF; Fall Time tf:180ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:160A; Rise Time:19ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***p One Stop Global
Trans IGBT Chip N-CH 600V 40A 160000mW 3-Pin(3+Tab) TO-220AB Tube
***ineon SCT
600V Warp 60-150 kHz Discrete IGBT in a TO-220AB package, TO220-3, RoHS
***ure Electronics
IRG4BC40WPBF Series 600 V 20 A N-Channel Latest Generation IGBT - TO-220AB
***ineon
Target Applications: Air Conditioner; Dishwasher; Fan; PFC; Pump; Washing Machine
*** Stop Electro
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***nell
IGBT, TO-220; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 160W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; MSL: -; SVHC: No SVHC (27-Jun-2018); Cur
***ment14 APAC
IGBT, TO-220; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:2.5V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:40A; Current Temperature:25°C; Fall Time Max:74ns; Fall Time tf:74ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:160A; Rise Time:22ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***p One Stop Global
Trans IGBT Chip N-CH 600V 49A 160000mW 3-Pin(3+Tab) TO-220AB Tube
***eco
Transistor IGBT Chip Negative Channel 600 Volt 49A 3-Pin(3+Tab) TO-220AB
***ure Electronics
IRG4BC40FPbF Series 600 V 27 A N-Channel Fast Speed IGBT - TO-220AB
***ineon SCT
600V Fast 1-8 kHz Discrete IGBT in a TO-220AB package, TO220-3, RoHS
*** Stop Electro
Insulated Gate Bipolar Transistor, 49A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***trelec
IGBT Housing type: TO-220AB Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.5 V Current release time: 170 ns Power dissipation: 160 W
***ment14 APAC
IGBT, TO-220; Transistor Type:IGBT; DC Collector Current:49A; Collector Emitter Voltage Vces:1.8V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:49A; Current Temperature:25°C; Fall Time Max:170ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:200A; Rise Time:18ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***(Formerly Allied Electronics)
Transistor; N-Channel IGBT; TO-220AB; 42 A (Max.); 600 V (Max.); 160 W (Max.)
***ineon SCT
600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package, TO220-3, RoHS
***ow.cn
Trans IGBT Chip N-CH 600V 42A 160000mW 3-Pin(3+Tab) TO-220AB Tube
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 42A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***ark
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:42A; Collector Emitter Saturation Voltage, Vce(sat):2.6V; Power Dissipation, Pd:160W; Package/Case:TO-220AB ;RoHS Compliant: Yes
***nell
IGBT, 600V, 42A, TO-220; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:42A; Voltage, Vce Sat Max:2.1V; Power Dissipation:160W; Case Style:TO-220; Termination Type:Through Hole; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:84A; No. of Pins:3; Power, Pd:160W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall:210ns; Time, Fall Max:210ns; Time, Fall Typ:150ns; Time, Rise:18ns; Time, Short Circuit Withstand Min:10µs; Transistors, No. of:1
*** Source Electronics
Trans IGBT Chip N-CH 600V 34A 125000mW 3-Pin(3+Tab) TO-220 Tube / IGBT 600V 34A 125W TO220AB
***ure Electronics
HGTP7N60A4 Series 600 V 34 A Flange Mount SMPS N-Channel IGBT-TO-220AB
***r Electronics
Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***ment14 APAC
IGBT, N, TO-220; Transistor Type:IGBT; DC Collector Current:34A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:125W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:34A; Current Temperature:25°C; Fall Time tf:45ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220AB; Pin Format:GCE; Power Dissipation Max:125W; Power Dissipation Pd:125W; Power Dissipation Pd:125W; Power Dissipation Ptot Max:125W; Pulsed Current Icm:56A; Rise Time:11ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***rchild Semiconductor
The HGTP7N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.
300-1200V IGBTs
Infineon Rectifier has an extensive portfolio of IGBTs that ranges from 300V to 1200V and achieves the highest performance for specific application requirements. The Infineon IGBT portfolio includes the new ultra-fast IRG7PH 1200V Trench IGBTs that offer higher system efficiency while cutting switching losses and delivering higher switching frequencies. International Infineon IRG7PH ultra-fast 1200V IGBTs utilize thin wafer Field-Stop Trench technology that significantly reduces switching and conduction losses to deliver higher power density and greater efficiency at higher frequencies.Learn More
型號 製造商 描述 庫存 價格
IRG4BC40UPBF
DISTI # V36:1790_13892153		Infineon Technologies AGTrans IGBT Chip N-CH 600V 40A 3-Pin(3+Tab) TO-220AB Tube3787
  • 1:$2.7049
IRG4BC40UPBF
DISTI # IRG4BC40UPBF-ND		Infineon Technologies AGIGBT 600V 40A 160W TO220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		786In Stock
  • 1000:$2.1023
  • 500:$2.4927
  • 100:$2.9281
  • 10:$3.5740
  • 1:$3.9800
IRG4BC40UPBF
DISTI # 32019611		Infineon Technologies AGTrans IGBT Chip N-CH 600V 40A 3-Pin(3+Tab) TO-220AB Tube3787
  • 5000:$1.5699
  • 2000:$1.6580
  • 1000:$1.7970
  • 500:$1.8960
  • 250:$2.4970
  • 100:$2.6180
  • 10:$2.9760
  • 4:$3.4360
IRG4BC40UPBF
DISTI # 29558516		Infineon Technologies AGTrans IGBT Chip N-CH 600V 40A 3-Pin(3+Tab) TO-220AB Tube997
  • 4000:$1.6224
  • 2000:$1.7184
  • 1000:$1.8144
IRG4BC40UPBF
DISTI # 30605970		Infineon Technologies AGTrans IGBT Chip N-CH 600V 40A 3-Pin(3+Tab) TO-220AB Tube300
  • 100:$2.3205
  • 50:$2.4480
  • 10:$2.9580
  • 6:$4.3605
IRG4BC40UPBF
DISTI # IRG4BC40UPBF		Infineon Technologies AGTrans IGBT Chip N-CH 600V 40A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRG4BC40UPBF)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 4800
  • 1000:$1.8900
  • 2000:$1.7900
  • 4000:$1.6900
  • 6000:$1.6900
  • 10000:$1.6900
IRG4BC40UPBF
DISTI # 63J7495		Infineon Technologies AGSINGLE IGBT, 600V, 40A,DC Collector Current:40A,Collector Emitter Saturation Voltage Vce(on):2.15V,Power Dissipation Pd:160W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes77
  • 500:$2.3700
  • 250:$2.6400
  • 100:$2.7800
  • 50:$2.9200
  • 25:$3.0700
  • 10:$3.2100
  • 1:$3.7800
IRG4BC40UPBF.
DISTI # 27AC6929		Infineon Technologies AGINDUSTRY 59 ROHS COMPLIANT: YES0
  • 500:$2.3700
  • 250:$2.6400
  • 100:$2.7800
  • 50:$2.9200
  • 25:$3.1400
  • 10:$3.2800
  • 1:$3.8600
IRG4BC40UPBF
DISTI # 70017484		Infineon Technologies AG600V ULTRAFAST 8-60 KHZ DISCRETE IGBT IN A TO-220AB PACKAGE
RoHS: Compliant		0
  • 300:$5.2000
IRG4BC40UPBF
DISTI # 942-IRG4BC40UPBF		Infineon Technologies AGIGBT Transistors 600V UltraFast 8-60kHz
RoHS: Compliant		923
  • 1:$3.7800
  • 10:$3.2100
  • 100:$2.7800
  • 250:$2.6400
  • 500:$2.3700
  • 1000:$2.0000
  • 2000:$1.9000
IRG4BC40UPBFInternational RectifierInsulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB
RoHS: Compliant		850
  • 1000:$1.5800
  • 500:$1.6600
  • 100:$1.7300
  • 25:$1.8100
  • 1:$1.9400
IRG4BC40UPBF
DISTI # 5430175P		Infineon Technologies AGTRANSISTOR IGBT N-CH 600V 40A TO220AB, TU244
  • 25:£1.4400
IRG4BC40UPBF
DISTI # 5430175		Infineon Technologies AGTRANSISTOR IGBT N-CH 600V 40A TO220AB, EA95
  • 25:£1.4400
  • 1:£1.4800
IRG4BC40UPBFInternational Rectifier 145
    IRG4BC40UPBF
    DISTI # IRG4BC40UPBF    		Infineon Technologies AG600V 40A 160W TO220AB
    RoHS: Compliant    		620
    • 10:€2.2000
    • 50:€1.9000
    • 100:€1.7500
    • 200:€1.6000
    IRG4BC40UPBF
    DISTI # C1S327400098353    		Infineon Technologies AGTrans IGBT Chip N-CH 600V 40A 160000mW 3-Pin(3+Tab) TO-220AB Tube
    RoHS: Compliant    		191
    • 100:$1.8200
    • 50:$1.9700
    • 10:$2.3300
    • 1:$3.4200
    IRG4BC40UPBF
    DISTI # C1S322000498134    		Infineon Technologies AGIGBT Chip
    RoHS: Compliant    		300
    • 100:$1.8500
    • 50:$1.9500
    • 10:$2.3600
    • 1:$3.4900
    IRG4BC40UPBF
    DISTI # XSKDRABS0023774    		Infineon Technologies AG 
    RoHS: Compliant    		800 in Stock0 on Order
    • 800:$2.0700
    • 225:$2.2200
    IRG4BC40UPBF
    DISTI # XSKDRABV0021549    		Infineon Technologies AG 
    RoHS: Compliant    		300 in Stock0 on Order
    • 300:$2.4700
    IRG4BC40UPBF
    DISTI # 9104992    		Infineon Technologies AGIGBT, TO-220
    RoHS: Compliant    		636
    • 500:£1.3200
    • 250:£1.3300
    • 100:£1.3400
    • 10:£1.3700
    • 1:£1.4700
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    Mfr.#: 68691-210HLF

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    		 Headers & Wire Housings 10P DR HEADER
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    Mfr.#: TYN640RG

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    		 SCR 600V 40A TO-220AB
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    Mfr.#: STGP35HF60W

    OMO.#: OMO-STGP35HF60W-STMICROELECTRONICS

    		 IGBT Transistors 35A Ultrafast IGBT 600V 100kHz
    ESR10EZPF3301

    Mfr.#: ESR10EZPF3301

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    		 RES SMD 3.3K OHM 1% 0.4W 0805
    可用性
    庫存:
    Available
    訂購:
    1984
    輸入數量:
    IRG4BC40UPBF的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格（美元）
    數量
    單價
    小計金額
    1
    US$3.78
    US$3.78
    10
    US$3.21
    US$32.10
    100
    US$2.78
    US$278.00
    250
    US$2.64
    US$660.00
    500
    US$2.37
    US$1 185.00
    1000
    US$2.00
    US$2 000.00
    2000
    US$1.90
    US$3 800.00
    5000
    US$1.83
    US$9 150.00
    從...開始
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