BSC100N03MSGATMA1

Mfr. #:: BSC100N03MSGATMA1
製造商:: Infineon Technologies
描述:: MOSFET N-Ch 30V 44A TDSON-8 OptiMOS 3M
生命週期:: 製造商新產品
數據表:: BSC100N03MSGATMA1 數據表
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ECAD Model:

產品屬性
屬性值

製造商：: 英飛凌

產品分類：: MOSFET

RoHS：: Y

技術：: 矽

安裝方式：: 貼片/貼片

包裝/案例：: TDSON-8

通道數：: 1 Channel

晶體管極性：: N通道

Vds - 漏源擊穿電壓：: 30 V

Id - 連續漏極電流：: 44 A

Rds On - 漏源電阻：: 8.3 mOhms

Vgs th - 柵源閾值電壓：: 1 V

Vgs - 柵源電壓：: 20 V

Qg - 門電荷：: 23 nC

最低工作溫度：: - 55 C

最高工作溫度：: + 150 C

Pd - 功耗：: 30 W

配置：: 單身的

頻道模式：: 增強

商品名：: 優化MOS

打包：: 捲軸

高度：: 1.27 mm

長度：: 5.9 mm

系列：: OptiMOS 3M

晶體管類型：: 1 N-Channel

寬度：: 5.15 mm

品牌：: 英飛凌科技

正向跨導 - 最小值：: 27 S

秋季時間：: 5.4 ns

產品類別：: MOSFET

上升時間：: 4.8 ns

出廠包裝數量：: 5000

子類別：: MOSFET

典型關斷延遲時間：: 8 ns

典型的開啟延遲時間：: 8.5 ns

第 # 部分別名：: BSC100N03MS BSC1N3MSGXT G SP000311515

Tags: BSC100N03MSG, BSC100N03M, BSC100N03, BSC100N0, BSC100, BSC10, BSC1, BSC

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSC100N03MSGATMA1 描述

***ure Electronics: N-Channel 30 V 10 mOhm OptiMOS MOSFET - PG-TISON-8

***ment14 APAC: MOSFET, N CH, 44A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):8.3mohm; Rds(on) Test Voltage Vgs:10V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; Current Id Max:44A; Power Dissipation Pd:30W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ineon SCT: Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TDSON-8, RoHS

***ineon: With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED

***ure Electronics: Single N-Channel 30 V 8 mOhm 16 nC OptiMOS Power Mosfet - TDSON-8

***ment14 APAC: MOSFET, N CH, 100A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:53A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6.7mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:35W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:53A; Power Dissipation Pd:35W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ineon SCT: Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TDSON-8, RoHS

***ineon: With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED

***ure Electronics: Single N-Channel 30 V 9 mOhm 18 nC OptiMOS Power Mosfet - TDSON-8

***ineon SCT: Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TDSON-8, RoHS

***ment14 APAC: MOSFET, N CH, 48A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:48A; Drain Source Voltage Vds:30V; On Resistance Rds(on):7.5mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:32W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:48A; Power Dissipation Pd:32W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ineon: With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED

***Yang: Trans MOSFET N-CH 30V 12.5A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled

***emi: N-Channel PowerTrench® MOSFET, Logic Level, 30V, 12.5A, 9.5mΩ

***ure Electronics: N-Channel 30 V 9.5 mOhm Surface Mount Logic Level PowerTrench Mosfet -SOIC-8

***et Europe: Trans MOSFET N-CH 30V 12.5A 8-Pin SOIC N T/R

***rchild Semiconductor: This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

***ment14 APAC: MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:12.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):9.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:12.5A; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:50A; SMD Marking:FDS6680A; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:1V

***ure Electronics: Single N-Channel 30 V 8 mOhm 21 nC OptiMOS Power Mosfet - TDSON-8

***ment14 APAC: MOSFET, N CH, 53A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:53A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6.7mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:35W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:53A; Power Dissipation Pd:35W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ineon SCT: Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TDSON-8, RoHS

***ineon: With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED

***ure Electronics: N-Channel 30 V 9 mOhm Surface Mount PowerTrench Mosfet - SOIC-8

***Yang: Trans MOSFET N-CH 30V 13.5A 8-Pin SOIC N T/R - Tape and Reel

***emi: N-Channel PowerTrench® SyncFET™, 30V, 13.5A, 9.0mΩ

***nell: MOSFET, N-CH, 30V, 13.5A, SOIC-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 13.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0075ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V;

***rchild Semiconductor: The FDS6670AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6670AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology.

***ure Electronics: N-Channel 30 V 8.2 mOhm Surface Mount PowerTrench Mosfet - SOIC-8

***emi: N-Channel PowerTrench® MOSFET 30V, 12.5A, 8.5mΩ

***Yang: Trans MOSFET N-CH 30V 12.5A 8-Pin SOIC N T/R - Tape and Reel

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

Market price

型號	製造商	描述	庫存	價格
BSC100N03MSGATMA1 DISTI # V72:2272_06391000	Infineon Technologies AG	Trans MOSFET N-CH 30V 12A 8-Pin TDSON EP T/R RoHS: Compliant	2515	1000:$0.2423 500:$0.2963 250:$0.2965 100:$0.2970 25:$0.4305 10:$0.4370 1:$0.5199
BSC100N03MSGATMA1 DISTI # BSC100N03MSGATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 30V 44A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	9169In Stock	1000:$0.3264 500:$0.4000 100:$0.5289 10:$0.6760 1:$0.7700
BSC100N03MSGATMA1 DISTI # BSC100N03MSGATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 30V 44A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	9169In Stock	1000:$0.3264 500:$0.4000 100:$0.5289 10:$0.6760 1:$0.7700
BSC100N03MSGATMA1 DISTI # BSC100N03MSGATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 30V 44A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	On Order	5000:$0.2722
BSC100N03MSGATMA1 DISTI # 30985975	Infineon Technologies AG	Trans MOSFET N-CH 30V 12A 8-Pin TDSON EP T/R RoHS: Compliant	5000	5000:$0.2200
BSC100N03MSGATMA1 DISTI # 30702506	Infineon Technologies AG	Trans MOSFET N-CH 30V 12A 8-Pin TDSON EP T/R RoHS: Compliant	5000	50000:$0.1843 25000:$0.1872 10000:$0.1949 5000:$0.2026
BSC100N03MSGATMA1 DISTI # 27576322	Infineon Technologies AG	Trans MOSFET N-CH 30V 12A 8-Pin TDSON EP T/R RoHS: Compliant	2515	1000:$0.2423 500:$0.2963 250:$0.2965 100:$0.2970 31:$0.4305
BSC100N03MSGATMA1 DISTI # BSC100N03MSGATMA1	Infineon Technologies AG	Trans MOSFET N-CH 30V 12A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC100N03MSGATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	5000:$0.1869 10000:$0.1799 20000:$0.1739 30000:$0.1679 50000:$0.1649
BSC100N03MSGATMA1 DISTI # 50Y1812	Infineon Technologies AG	MOSFET Transistor, N Channel, 44 A, 30 V, 0.0083 ohm, 10 V, 2 V RoHS Compliant: Yes	0	10:$0.5040 5:$0.5570 1:$0.6100
BSC100N03MSGATMA1. DISTI # 27AC1076	Infineon Technologies AG	Transistor Polarity:N Channel,Continuous Drain Current Id:44A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0083ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:30W,No. of Pins:8Pins RoHS Compliant: Yes	0	50000:$0.1650 30000:$0.1680 20000:$0.1740 10000:$0.1800 1:$0.1870
BSC100N03MSGATMA1	Infineon Technologies AG	N-Channel 30 V 10 mOhm OptiMOS MOSFET - PG-TISON-8 RoHS: Not Compliant	5000Reel	5000:$0.1830
BSC100N03MS G DISTI # 726-BSC100N03MSG	Infineon Technologies AG	MOSFET N-Ch 30V 44A TDSON-8 OptiMOS 3M RoHS: Compliant	4500	1:$0.6100 10:$0.5040 100:$0.3250 1000:$0.2600
BSC100N03MSGATMA1 DISTI # 726-BSC100N03MSGATMA	Infineon Technologies AG	MOSFET N-Ch 30V 44A TDSON-8 OptiMOS 3M RoHS: Compliant	3879	1:$0.6100 10:$0.5040 100:$0.3250 1000:$0.2600 5000:$0.2200
BSC100N03MSGATMA1 DISTI # BSC100N03MSGATMA1	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,30V,41A,30W,PG-TDSON-8	2877	3:$0.4145 25:$0.3574 100:$0.2872 250:$0.2494 1000:$0.2322
BSC100N03MSGATMA1 DISTI # 2480746	Infineon Technologies AG	MOSFET, N-CH, 30V, 44A, TDSON-8 RoHS: Compliant	0	500:£0.2150 250:£0.2310 100:£0.2480 25:£0.4050 5:£0.4340
BSC100N03MSGATMA1 DISTI # 2480746RL	Infineon Technologies AG	MOSFET, N-CH, 30V, 44A, TDSON-8 RoHS: Compliant	0	1000:$0.4120 5000:$0.4120 100:$0.5150 10:$0.7980 1:$0.9650
BSC100N03MSGATMA1 DISTI # 2480746	Infineon Technologies AG	MOSFET, N-CH, 30V, 44A, TDSON-8 RoHS: Compliant	0	1000:$0.4120 5000:$0.4120 100:$0.5150 10:$0.7980 1:$0.9650
BSC100N03MSGATMA1 DISTI # XSFP00000159443	Infineon Technologies AG	Power Field-Effect Transistor,7.2AI(D),950V,1.35ohm, 1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET,TO-220AB RoHS: Compliant	15000	5000:$0.3660 15000:$0.3327

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