DF1400R12IP4D

Mfr. #:: DF1400R12IP4D
製造商:: Infineon Technologies
描述:: IGBT Modules IGBT MODULES 1200V 1400A
生命週期:: 製造商新產品
數據表:: DF1400R12IP4D 數據表
交貨:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

產品屬性
屬性值

製造商：: 英飛凌

產品分類：: IGBT 模塊

打包：: 托盤

品牌：: 英飛凌科技

產品類別：: IGBT 模塊

出廠包裝數量：: 2

子類別：: IGBT

第 # 部分別名：: DF1400R12IP4DBOSA1 SP000721134

Tags: DF140, DF14, DF1

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

DF1400R12IP4D 描述

***et: IGBT Module N-Ch 1200V 1400A

***i-Key: IGBT MODULE VCES 1200V 1400A

***ronik: DF-Chopper 1200V 1400A PRIMEP

***ark: IGBT Module; Module Configuration:Chopper; Transistor Polarity:N Channel; DC Collector Current:1400A; Collector Emitter Voltage Vces:1.2kV; Power Dissipation Pd:7.7kW; No. of Pins:12 ;RoHS Compliant: Yes

***nell: IGBT,HIG POW,CHOP MOD NTC,1200V,1400A; Transistor Polarity:N Channel; DC Collector Current:1400A; Collector Emitter Voltage Vces:1.75V; Power Dissipation Max:7.7kW; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; No. of Pins:12

***ment14 APAC: IGBT, HIG POW, 1200V, 1400A; Module Configuration:Single; Transistor Polarity:N Channel; DC Collector Current:1400A; Collector Emitter Voltage Vces:1.75V; Power Dissipation Pd:7.7kW; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:Module; No. of Pins:12; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:7.7kW

***ineon: 1200V PrimePACK3 chopper IGBT module with Trench/Fieldstop IGBT4, increased Emitter Controlled 4 diode and NTC. | Summary of Features: Extended Operation Temperature T(tvj op); High DC Stability; High Short Circuit Capability, Self Limiting Short Circuit Current; V(cesat) with positive Temperature Coefficient; Low V(cesat); 4kV AC 1min Insulation; Package with CTI > 400; High Creepage and Clearance Distances; High Power and Thermal Cycling Capability; Substrate for Low Thermal Resistance; UL recognized | Benefits: High Power Density; Standardized housing | Target Applications: drives; wind; solar; cav; ups

Market price

型號	製造商	描述	庫存	價格
DF1400R12IP4DBOSA1 DISTI # DF1400R12IP4DBOSA1-ND	Infineon Technologies AG	IGBT MODULE VCES 1200V 1400A RoHS: Not compliant Min Qty: 2 Container: Bulk	Temporarily Out of Stock	2:$644.2000
DF1400R12IP4DBOSA1 DISTI # DF1400R12IP4DBOSA1	Infineon Technologies AG	IGBT Module N-Ch 1200V 1400A - Trays (Alt: DF1400R12IP4DBOSA1) RoHS: Compliant Min Qty: 2 Container: Tray	Americas - 0	2:$684.1900 4:$659.4900 8:$635.5900 12:$614.2900 20:$603.2900
DF1400R12IP4D	Infineon Technologies AG	Insulated Gate Bipolar Transistor, 1400A I(C), 1200V V(BR)CES, N-Channel RoHS: Compliant	2	1000:$562.0000 500:$591.5800 100:$615.8900 25:$642.2900 1:$691.6900
DF1400R12IP4DBOSA1	Infineon Technologies AG	Insulated Gate Bipolar Transistor, 1400A I(C), 1200V V(BR)CES, N-Channel RoHS: Compliant	86	1000:$515.1700 500:$542.2900 100:$564.5700 25:$588.7700 1:$634.0600
DF1400R12IP4D DISTI # 641-DF1400R12IP4D	Infineon Technologies AG	IGBT Modules IGBT MODULES 1200V 1400A	2	1:$641.1100 5:$602.4700
DF1400R12IP4D	Infineon Technologies AG		1	1:$1,374.4500