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IXFR50N50

IXFR50N50
Mfr. #:
IXFR50N50
製造商:
Littelfuse
描述:
MOSFET 43 Amps 500V 0.1 Rds
生命週期:
製造商新產品
數據表:
IXFR50N50 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFR50N50 Datasheet
ECAD Model:
產品屬性
屬性值
製造商：
IXYS
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
通孔
包裝/案例：
TO-247-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
500 V
Id - 連續漏極電流：
43 A
Rds On - 漏源電阻：
100 mOhms
Vgs - 柵源電壓：
20 V
最低工作溫度：
- 40 C
最高工作溫度：
+ 150 C
Pd - 功耗：
400 W
配置：
單身的
頻道模式：
增強
商品名：
超場效應晶體管
打包：
管子
高度：
21.34 mm
長度：
16.13 mm
系列：
IXFR50N50
晶體管類型：
1 N-Channel
寬度：
5.21 mm
品牌：
IXYS
秋季時間：
45 ns
產品類別：
MOSFET
上升時間：
60 ns
出廠包裝數量：
30
子類別：
MOSFET
典型關斷延遲時間：
120 ns
典型的開啟延遲時間：
45 ns
單位重量：
0.056438 oz
Tags
IXFR5, IXFR, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 500V 43A 3-Pin (3+Tab) ISOPLUS 247
***ponent Stockers USA
43 A 500 V 0.1 ohm N-CHANNEL Si POWER MOSFET
***i-Key
MOSFET N-CH 500V 43A ISOPLUS247
***icroelectronics
N-channel 500 V, 0.08 Ohm ty., 45 A MDmesh Power MOSFET in a TO-247 package
***eco
Transistor MOSFET N-Channel 500 Volt 45A 3-Pin(3+Tab) TO-247
***ure Electronics
N-Channel 500 V 0.1 O 87 nC Flange Mount MDmesh Power Mosfet - TO-247
***r Electronics
Power Field-Effect Transistor, 45A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***nell
MOSFET, N CH, 550V, 45A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 45A; Drain Source Voltage Vds: 550V; On Resistance Rds(on): 0.1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power
***p One Stop Global
Trans MOSFET N-CH Si 500V 50A 3-Pin(3+Tab) TO-3PL
***el Electronic
Power Management Specialized - PMIC IEEE 802.3af Class 1/Class 2 PD
***i-Key
MOSFET N-CH 500V 50A TO-3P(L)
***or
MOSFET N-CH 500V 50A TO3P
***emi
N-Channel Power MOSFET, UniFETTM, 500 V, 44 A, 120 mΩ, TO-247
***r Electronics
Power Field-Effect Transistor, 44A I(D), 500V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***el Electronic
Coaxial Connectors (RF) Jack, Male Pin Snap-On 1 (Unlimited) 50 Ω 10 Weeks Bulk SSMB Through Hole, Right Angle Brass RF Connectors / Coaxial Connectors SSMB M RA NA
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:500V; Continuous Drain Current, Id:44A; On Resistance, Rds(on):0.12ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-247 ;RoHS Compliant: Yes
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***ment14 APAC
MOSFET, N, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:44A; Drain Source Voltage Vds:500V; On Resistance Rds(on):110mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.15V; Power Dissipation Pd:750W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-249; Current Id Max:44A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Pd:750W; Power Dissipation Pd:750W; Power Dissipation Ptot Max:750W; Pulse Current Idm:176A; Termination Type:Through Hole; Voltage Vds Typ:500V; Voltage Vgs Max:3.15V; Voltage Vgs Rds on Measurement:10V
***emi
N-Channel Power MOSFET, UniFETTM, 500V, 48A, 105mΩ, TO-3P
*** Source Electronics
Trans MOSFET N-CH 500V 48A 3-Pin(3+Tab) TO-3P Tube / MOSFET N-CH 500V 48A TO-3P
***nell
MOSFET, N-CH, 500V, 48A, TO-3PN-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 48A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.089ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Po
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***ure Electronics
Single N-Channel 500 V 0.105 Ohm 137 nC 625 W Flange Mount Mosfet - TO-247-3
***emi
N-Channel UniFETTM MOSFET 500V, 48A, 105mΩ
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***et
Transistor MOSFET N-Channel 600V 53.5A 3-Pin TO-247 Tube
***ure Electronics
N-Channel 600 V 53.5 A 70 mO 100 nC CoolMOS P6 Power Transistor - TO-247
***ark
MOSFET, N-CH, 600V, 53.5A, 150DEG C/391W; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:53.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
***ineon SCT
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO247-3, RoHS
***ineon
Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles
型號 製造商 描述 庫存 價格
IXFR50N50
DISTI # IXFR50N50-ND		IXYS CorporationMOSFET N-CH 500V 43A ISOPLUS247
RoHS: Compliant
Min Qty: 30
Container: Tube		Temporarily Out of Stock
  • 30:$19.3460
IXFR50N50
DISTI # 747-IXFR50N50		IXYS CorporationMOSFET 43 Amps 500V 0.1 Rds
RoHS: Compliant		0
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    可用性
    庫存:
    Available
    訂購:
    4000
    輸入數量:
    IXFR50N50的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格（美元）
    數量
    單價
    小計金額
    1
    US$22.76
    US$22.76
    5
    US$21.62
    US$108.10
    10
    US$21.06
    US$210.60
    25
    US$19.35
    US$483.75
    50
    US$18.52
    US$926.00
    100
    US$17.98
    US$1 798.00
    250
    US$16.50
    US$4 125.00
    500
    US$15.71
    US$7 855.00
    由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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