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GN2470K4-G

GN2470K4-G
Mfr. #:
GN2470K4-G
製造商:
Microchip Technology
描述:
IGBT Transistors 700V 3.5A IGBT
生命週期:
製造商新產品
數據表:
GN2470K4-G 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
更多信息:
GN2470K4-G 更多信息 GN2470K4-G Product Details
產品屬性
屬性值
製造商：
微芯片
產品分類：
IGBT晶體管
RoHS：
Y
技術：
矽
包裝/案例：
TO-252 (DPAK)-3
安裝方式：
貼片/貼片
配置：
單身的
集電極-發射極電壓 VCEO 最大值：
700 V
最大柵極發射極電壓：
20 V
Pd - 功耗：
2.5 W
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
打包：
捲軸
連續集電極電流 Ic 最大值：
1 A
高度：
2.39 mm
長度：
6.73 mm
寬度：
6.1 mm
品牌：
微芯科技
連續集電極電流：
1 A
濕氣敏感：
是的
產品類別：
IGBT晶體管
出廠包裝數量：
2000
子類別：
IGBT
Tags
GN247, GN24, GN2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N=-CH 700V 1A 2500mW 3-Pin(2+Tab) DPAK
***(Formerly Allied Electronics)
INSULATED GATE BIPOLAR TRANSISTOR, 700V, 3.5A3 DPAK T/R | Microchip Technology Inc. GN2470K4-G
***rochip
INSULATED GATE BIPOLAR TRANSISTOR 700V 3.5A
*** Electronic Components
IGBT Transistors 700V 3.5A IGBT
***enic
TO-252(DPAK)-3 Pre-ordered MCUs ROHS
***ical
Trans IGBT Chip N-CH 600V 12A 3-Pin(2+Tab) TO-252
***nell
TRANSISTOR, IGBT, 600V, 12A, TO-252; DC Collector Current: 12A; Collector Emitter Saturation Voltage Vce(on): 1.5V; Power Dissipation Pd: 88W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: TRENCHSTOP™ Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon SCT
The 600 V, 6 A single TRENCHSTOP™ IGBT3 in a TO252 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO252-3, RoHS
***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications
***ical
Trans IGBT Chip N-CH 600V 10A 83000mW 3-Pin(2+Tab) DPAK T/R
***icroelectronics
Trench gate field-stop IGBT, H series 600 V, 5 A high speed
***ure Electronics
H Series 600 V 10 A SMT Trench Gate Field-Stop IGBT - TO-252
***nell
IGBT, 600V, 10A, 175DEG C, 83W; DC Collector Current: 10A; Collector Emitter Saturation Voltage Vce(on): 1.5V; Power Dissipation Pd: 83W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: H Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***ow.cn
Trans IGBT Chip N-CH 600V 12A 100000mW Automotive 3-Pin(2+Tab) DPAK T/R
***ark
Igbt, Single, 600V, 12A, To-252; Dc Collector Current:12A; Collector Emitter Saturation Voltage Vce(On):2.2V; Power Dissipation Pd:100W; Collector Emitter Voltage V(Br)Ceo:600V; Transistor Case Style:to-252; No. Of Pins:3Pins; Rohs Compliant: Yes
***ineon
RC-Drives IGBT technology has been developed by Infineon as a cost optimized solution for sensitive consumer drives market. This basic technology provides outstanding performance for permanent magnet synchronous and brushless DC motor drives. | Summary of Features: Optimized parameters for up to 20% lower switching losses; Operating range of DC to 30kHz; Max junction temperature 175C; Short circuit capability of 5s; Very tight parameter distribution; Best in class current versus package size performance; Smooth switching performance leading to low EMI levels | Benefits: Excellent cost/performance for hard switching applications; Outstanding temperature stability; Very good EMI behavior; Up to 60% space saving on the PCB; Higher reliability due to monolithically integrated IGBT & diode due to less thermal cycling during switching | Target Applications: Washing machines; General purpose inverters; Aircon compressors; Hard switching topologies up to 1.0kW
***ical
Trans IGBT Chip N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R
***emi
IGBT, 600V, 3A, Short Circuit Rated
*** Stop Electro
Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-252
***S
French Electronic Distributor since 1988
***rchild Semiconductor
Using advanced NPT IGBT Technology, Fairchild’s the NPT IGBTs offer the optimum performance for low power inverter-driven applications where low-losses and short circuit ruggedness feature are essential.
***ical
Trans IGBT Chip N-CH 600V 12A 100000mW Automotive 3-Pin(2+Tab) DPAK T/R
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 27pF 50volts C0G 5%
***or
DISCRETE IGBT WITHOUT ANTI-PARAL
***et
IGBT 600V 6A 30W DPAK
*** Electronic Components
IGBT Transistors Dis High Perf IGBT
***inecomponents.com
Discrete, High Performance IGBT
***rchild Semiconductor
Fairchild's UF series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UF series is designed for applications such as motor control and general inverters where high speed switching is a required feature.
型號 製造商 描述 庫存 價格
GN2470K4-G
DISTI # 27693368		Microchip Technology IncTrans IGBT Chip N-CH 700V 1A 3-Pin(2+Tab) DPAK
RoHS: Compliant		8674
  • 100:$0.9723
  • 61:$1.0245
GN2470K4-G
DISTI # GN2470K4-G-ND		Microchip Technology IncIC IGBT 700V 3.5A 3DPAK
RoHS: Compliant
Min Qty: 2000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2000:$0.9064
GN2470K4-G
DISTI # 70483961		Microchip Technology IncINSULATED GATE BIPOLAR TRANSISTOR,700V,3.5A3 DPAKT/R
RoHS: Compliant		0
  • 2000:$0.8600
GN2470K4-G
DISTI # 689-GN2470K4-G		Microchip Technology IncIGBT Transistors 700V 3.5A IGBT
RoHS: Compliant		0
  • 2000:$0.9070
GN2470K4
DISTI # 689-GN2470K4		Microchip Technology IncIGBT Transistors 700V 3.5A IGBT
RoHS: Not compliant		0
    GN2470K4-G
    DISTI # GN2470K4G    		Microchip Technology Inc 8935
    • 1:$1.0300
    • 25:$0.9800
    • 100:$0.9300
    • 500:$0.8800
    • 1000:$0.6600
    • 1500:$0.6200
    • 2000:$0.6000
    圖片 型號 描述
    GN2470K4-G

    Mfr.#: GN2470K4-G

    OMO.#: OMO-GN2470K4-G

    		 IGBT Transistors 700V 3.5A IGBT
    GN2470-K4-G

    Mfr.#: GN2470-K4-G

    OMO.#: OMO-GN2470-K4-G-1190

    		 全新原裝
    GN2470K4

    Mfr.#: GN2470K4

    OMO.#: OMO-GN2470K4-1190

    		 IGBT Transistors 700V 3.5A IGBT
    GN2470K4-G

    Mfr.#: GN2470K4-G

    OMO.#: OMO-GN2470K4-G-MICROCHIP-TECHNOLOGY

    		 IGBT Transistors 700V 3.5A IGBT
    可用性
    庫存:
    Available
    訂購:
    2500
    輸入數量:
    GN2470K4-G的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
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