IPB096N03L G

IPB096N03L G
Mfr. #:
IPB096N03L G
製造商:
INFINEON
描述:
IGBT Transistors MOSFET N-Ch 30V 35A D2PAK-2 OptiMOS 3
生命週期:
製造商新產品
數據表:
IPB096N03L G 數據表
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ECAD Model:
產品屬性
屬性值
製造商
英飛凌
產品分類
FET - 單
系列
OptiMOS 3
打包
捲軸
部分別名
IPB096N03LGATMA1 SP000254711
單位重量
0.139332 oz
安裝方式
貼片/貼片
商品名
優化MOS
包裝盒
TO-252-3
技術
通道數
1 Channel
配置
單身的
晶體管型
1 N-Channel
鈀功耗
42 W
最高工作溫度
+ 175 C
最低工作溫度
- 55 C
秋季時間
2.6 ns
上升時間
3.2 ns
VGS-柵極-源極-電壓
20 V
Id 連續漏極電流
35 A
Vds-漏-源-擊穿電壓
30 V
Rds-On-Drain-Source-Resistance
9.6 mOhms
晶體管極性
N通道
典型關斷延遲時間
16 ns
典型開啟延遲時間
4 ns
通道模式
增強
Tags
IPB096N03LG, IPB096, IPB09, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET, N CH, 35A, 30V, PG-TO263-3; Transistor Polarity:N Channel; Continuous Dr
***et
Trans MOSFET N-CH 30V 35A 3-Pin(2+Tab) TO-263
***ronik
N-CH 30V 35A 10mOhm TO263-3 RoHSconf
***nell
MOSFET, N CH, 35A, 30V, PG-TO263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 35A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.008ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 42W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 35A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Transistor Type: Power MOSFET; Voltage Vgs Max: 20V
***emi
N-Channel PowerTrench® MOSFET, Logic Level, 30V, 60A, 9mΩ
***Yang
Trans MOSFET N-CH 30V 60A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel
***ure Electronics
N-Channel 30 V 9 mohm Surface Mount Logic Level PowerTrench Mosfet TO-263AB
*** Stop Electro
Power Field-Effect Transistor, 60A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***el Electronic
Chip Resistor - Surface Mount 680Ohm 0402 (1005 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 680 OHM 1% 1/10W 0402
***nell
MOSFET, N-CH, 30V, 60A, TO-263AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 60A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0068ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.9V; Power Dissipation Pd: 60W; Transistor Case Style: TO-263AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***rchild Semiconductor
This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
***i-Key
MOSFET N-CH 30V 71A D2PAK
***Yang
TRANS MOSFET N-CH 30V 71A 3PIN TO-263 - Bulk
***ser
MOSFETs 30V N-Ch PowerTrench MOSFET
***inecomponents.com
30V,48A, 14 OHM NCH LOGIC LEVEL POWER TRENCH MOSFET
***et
TRANS MOSFET N-CH 30V 48A 3PIN TO-263AB
***ser
MOSFETs 30V N-Ch PowerTrench MOSFET
***el Electronic
Chip Resistor - Surface Mount 100Ohm 0603 (1608 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 100 OHM 1% 1/10W 0603
***p One Stop Global
Trans MOSFET N-CH 30V 48A 3-Pin(2+Tab) D2PAK T/R
***el Electronic
Chip Resistor - Surface Mount 60.4Ohm 0402 (1005 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 60.4 OHM 1% 1/10W 0402
***nell
TRANSISTOR, MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Voltage, Vds Typ:30V; Current, Id Cont:48A; On State Resistance:0.013ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.9V; Case Style:TO-220; Termination Type:SMD; Operating Temperature Range:-65°C to +175°C; Transistor Case Style:TO-220
***rchild Semiconductor
This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
***ical
Trans MOSFET N-CH 30V 25A 3-Pin(2+Tab) TO-263AB
***i-Key
MOSFET N-CH 30V 25A D2PAK
***S
French Electronic Distributor since 1988
***-Wing Technology
N-CHANNEL POWER MOSFET
***ser
Not available to order .
***ponent Stockers USA
20 A 30 V 0.0217 ohm N-CHANNEL Si POWER MOSFET TO-263AB
***i-Key
MOSFET N-CH 30V 20A TO263-3
*** Electronics
OPTLMOS N-CHANNEL POWER MOSFET
***el Nordic
Contact for details
***et
N-KANAL POWER MOS
型號 製造商 描述 庫存 價格
IPB096N03LGATMA1
DISTI # IPB096N03LGATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 30V 35A TO-263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Limited Supply - Call
    IPB096N03LGATMA1
    DISTI # IPB096N03LGATMA1CT-ND
    Infineon Technologies AGMOSFET N-CH 30V 35A TO-263-3
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      IPB096N03LGATMA1
      DISTI # IPB096N03LGATMA1DKR-ND
      Infineon Technologies AGMOSFET N-CH 30V 35A TO-263-3
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        IPB096N03L G
        DISTI # 726-IPB096N03LG
        Infineon Technologies AGMOSFET N-Ch 30V 35A D2PAK-2 OptiMOS 3
        RoHS: Compliant
        0
          IPB096N03LGInfineon Technologies AGPower Field-Effect Transistor, 35A I(D), 30V, 0.0141ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
          RoHS: Compliant
          402
          • 1000:$0.3200
          • 500:$0.3400
          • 100:$0.3600
          • 25:$0.3700
          • 1:$0.4000
          IPB096N03LGATMA1Infineon Technologies AGPower Field-Effect Transistor, 35A I(D), 30V, 0.0141ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
          RoHS: Compliant
          5000
          • 1000:$0.4100
          • 500:$0.4300
          • 100:$0.4500
          • 25:$0.4700
          • 1:$0.5100
          圖片 型號 描述
          IPB096N03L

          Mfr.#: IPB096N03L

          OMO.#: OMO-IPB096N03L-1190

          全新原裝
          IPB096N03LG

          Mfr.#: IPB096N03LG

          OMO.#: OMO-IPB096N03LG-1190

          Power Field-Effect Transistor, 35A I(D), 30V, 0.0141ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
          IPB096N03LGATMA1

          Mfr.#: IPB096N03LGATMA1

          OMO.#: OMO-IPB096N03LGATMA1-INFINEON-TECHNOLOGIES

          MOSFET N-CH 30V 35A TO-263-3
          IPB096N03L G

          Mfr.#: IPB096N03L G

          OMO.#: OMO-IPB096N03L-G-126

          IGBT Transistors MOSFET N-Ch 30V 35A D2PAK-2 OptiMOS 3
          可用性
          庫存:
          Available
          訂購:
          1500
          輸入數量:
          IPB096N03L G的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
          參考價格(美元)
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          單價
          小計金額
          1
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          100
          US$0.00
          US$0.00
          500
          US$0.00
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          US$0.00
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