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STGP6NC60HD

STGP6NC60HD
Mfr. #:
STGP6NC60HD
製造商:
STMicroelectronics
描述:
IGBT Transistors PowerMESH&#34 IGBT
生命週期:
製造商新產品
數據表:
STGP6NC60HD 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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HTML Datasheet:
STGP6NC60HD DatasheetSTGP6NC60HD Datasheet (P4-P6)STGP6NC60HD Datasheet (P7-P9)STGP6NC60HD Datasheet (P10-P12)STGP6NC60HD Datasheet (P13-P15)STGP6NC60HD Datasheet (P16-P18)
ECAD Model:
更多信息:
STGP6NC60HD 更多信息 STGP6NC60HD Product Details
產品屬性
屬性值
製造商：
意法半導體
產品分類：
IGBT晶體管
RoHS：
Y
技術：
矽
包裝/案例：
TO-220-3
安裝方式：
通孔
配置：
單身的
集電極-發射極電壓 VCEO 最大值：
600 V
集電極-發射極飽和電壓：
1.9 V
最大柵極發射極電壓：
20 V
25 C 時的連續集電極電流：
15 A
Pd - 功耗：
56 W
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
系列：
STGP6NC60HD
打包：
管子
連續集電極電流 Ic 最大值：
15 A
高度：
9.15 mm
長度：
10.4 mm
寬度：
4.6 mm
品牌：
意法半導體
連續集電極電流：
7 A
柵極-發射極漏電流：
100 nA
產品類別：
IGBT晶體管
出廠包裝數量：
1000
子類別：
IGBT
單位重量：
0.211644 oz
Tags
STGP6N, STGP6, STGP, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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***nell
IGBT, TO-220; DC Collector Current: 15A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 56W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Tem
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IGBT, TO-220; DC Collector Current: 20A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 65W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Tem
***ment14 APAC
IGBT, TO-220; DC Collector Current:20A; Collector Emitter Voltage Vces:2.5V; Power Dissipation Pd:65W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; SVHC:No SVHC (20-Jun-2011); Current Ic Continuous a Max:20A; Package / Case:TO-220; Power Dissipation Max:65W; Power Dissipation Pd:60W; Pulsed Current Icm:40A; Rise Time:5ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
*** Source Electronics
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***r Electronics
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***nell
IGBT, TO-220; DC Collector Current: 20A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 60W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Tem
***ical
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***ineon SCT
High Speed 650 V, hard-switching IGBT TRENCHSTOPTM 5 co-packed with RAPID 1 fast and soft anti-parallel diode in a TO-247 package, is defined as "best-in-class" IGBT, PG-TO220-3, RoHS
***nell
IGBT, 650V, 8A, TO220-3; DC Collector Current: 8A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 70W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Cas; Available until stocks are exhausted
***ineon
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***ineon SCT
The 600 V, 6 A hard-switching TRENCHSTOP™ IGBT3 copacked with full-rated free-wheeling diode in a TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO220-3, RoHS
***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications
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***ineon SCT
Infineon's 600 V, 6 A single TRENCHSTOP™ IGBT3 in a TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO220-3, RoHS
***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications
型號 製造商 描述 庫存 價格
STGP6NC60HD
DISTI # 33632704		STMicroelectronicsTrans IGBT Chip N-CH 600V 15A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		1950
  • 24:$0.4222
STGP6NC60HD
DISTI # 497-5122-5-ND		STMicroelectronicsIGBT 600V 15A 56W TO220
RoHS: Compliant
Min Qty: 1
Container: Tube		1992In Stock
  • 5000:$0.5488
  • 2500:$0.5762
  • 500:$0.7820
  • 100:$0.9467
  • 50:$1.1524
  • 10:$1.2140
  • 1:$1.3600
STGP6NC60HD
DISTI # V36:1790_06560719		STMicroelectronicsTrans IGBT Chip N-CH 600V 15A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		0
    STGP6NC60HD
    DISTI # STGP6NC60HD    		STMicroelectronicsTrans IGBT Chip N-CH 600V 15A 3-Pin(3+Tab) TO-220 Tube (Alt: STGP6NC60HD)
    RoHS: Compliant
    Min Qty: 50
    Container: Tube    		Europe - 24000
    • 500:€0.3949
    • 300:€0.4259
    • 200:€0.4609
    • 100:€0.5029
    • 50:€0.6149
    STGP6NC60HD
    DISTI # STGP6NC60HD    		STMicroelectronicsTrans IGBT Chip N-CH 600V 15A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: STGP6NC60HD)
    RoHS: Compliant
    Min Qty: 2000
    Container: Tube    		Americas - 0
    • 20000:$0.4999
    • 10000:$0.5109
    • 6000:$0.5339
    • 4000:$0.5599
    • 2000:$0.5869
    STGP6NC60HD
    DISTI # 26M3561    		STMicroelectronicsIGBT, TO-220,DC Collector Current:15A,Collector Emitter Saturation Voltage Vce(on):2.5V,Power Dissipation Pd:56W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:150°C,Product Range:-,MSL:- RoHS Compliant: Yes364
    • 1000:$0.6350
    • 500:$0.7850
    • 100:$0.8780
    • 10:$1.1200
    • 1:$1.3000
    STGP6NC60HD
    DISTI # 511-STGP6NC60HD    		STMicroelectronicsIGBT Transistors PowerMESH&#34 IGBT
    RoHS: Compliant    		1583
    • 1:$1.2900
    • 10:$1.1000
    • 100:$0.8430
    • 500:$0.7450
    • 1000:$0.5880
    • 2000:$0.5220
    • 10000:$0.5020
    STGP6NC60HD
    DISTI # 6868388    		STMicroelectronicsTRANSISTOR IGBT N-CH 600V 15A TO220, PK260
    • 250:£0.6020
    • 100:£0.6140
    • 50:£0.7080
    • 25:£0.8020
    • 5:£1.0080
    STGP6NC60HD
    DISTI # 1293649    		STMicroelectronicsIGBT, TO-220
    RoHS: Compliant    		364
    • 10000:$0.7730
    • 2000:$0.8030
    • 1000:$0.9040
    • 500:$1.1500
    • 100:$1.3000
    • 10:$1.7000
    • 1:$1.9800
    STGP6NC60HD
    DISTI # 1293649    		STMicroelectronicsIGBT, TO-220384
    • 500:£0.5870
    • 250:£0.6240
    • 100:£0.6620
    • 25:£0.8650
    • 5:£0.9590
    STGP6NC60HD
    DISTI # XSKDRABS0026166    		STMicroelectronicsInsulatedGateBipolarTransistor,15AI(C),600VV(BR)CES,N-Channel
    RoHS: Compliant    		19200 in Stock0 on Order
    • 19200:$0.5828
    • 1350:$0.6245
    STGP6NC60HDSTMicroelectronicsInsulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES, N-Channel, TO-220AB
    RoHS: Compliant    		Europe - 47000
      STGP6NC60HD
      DISTI # TMOSP8645      		STMicroelectronicsIGBT600V15A2.5VTO220-3Stock DE - 0Stock HK - 0Stock US - 0
      • 50:$0.5494
      • 100:$0.5156
      • 200:$0.5071
      • 400:$0.4987
      • 700:$0.4691
      STGP6NC60HD
      DISTI # STGP6NC60HD      		STMicroelectronics600V 15A 56W TO220
      RoHS: Not Compliant      		680
      • 10:€0.7800
      • 50:€0.4800
      • 200:€0.3800
      • 500:€0.3700
      STGP6NC60HDSTMicroelectronics15A,600V fast IGBT with Ultrafast diode32
      • 1:$0.6400
      • 100:$0.5700
      • 500:$0.5400
      • 1000:$0.4900
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      可用性
      庫存:
      Available
      訂購:
      1984
      輸入數量:
      STGP6NC60HD的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
      參考價格（美元）
      數量
      單價
      小計金額
      1
      US$1.29
      US$1.29
      10
      US$1.10
      US$11.00
      100
      US$0.84
      US$84.30
      500
      US$0.74
      US$372.50
      1000
      US$0.59
      US$588.00
      2000
      US$0.52
      US$1 044.00
      10000
      US$0.50
      US$5 020.00
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