IPN80R3K3P7ATMA1

Mfr. #:: IPN80R3K3P7ATMA1
製造商:: Infineon Technologies
描述:: MOSFET LOW POWER_NEW
生命週期:: 製造商新產品
數據表:: IPN80R3K3P7ATMA1 數據表
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更多信息:: IPN80R3K3P7ATMA1 更多信息

產品屬性
屬性值

製造商：: 英飛凌

產品分類：: MOSFET

RoHS：: Y

技術：: 矽

安裝方式：: 貼片/貼片

包裝/案例：: SOT-223-3

通道數：: 1 Channel

晶體管極性：: N通道

Vds - 漏源擊穿電壓：: 800 V

Id - 連續漏極電流：: 1.9 A

Rds On - 漏源電阻：: 2.8 Ohms

Vgs th - 柵源閾值電壓：: 3.5 V

Vgs - 柵源電壓：: 30 V

Qg - 門電荷：: 5.8 nC

最低工作溫度：: - 55 C

最高工作溫度：: + 150 C

Pd - 功耗：: 6.1 W

配置：: 單身的

頻道模式：: 增強

打包：: 捲軸

晶體管類型：: 1 N-Channel

品牌：: 英飛凌科技

秋季時間：: 40 ns

產品類別：: MOSFET

上升時間：: 10 ns

出廠包裝數量：: 3000

子類別：: MOSFET

典型關斷延遲時間：: 40 ns

典型的開啟延遲時間：: 12 ns

第 # 部分別名：: IPN80R3K3P7 SP001664992

Tags: IPN80, IPN8, IPN

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPN80R3K3P7ATMA1 描述

***et Europe: CoolMOS P7 Power Transistor MOSFET 800V 1.9A 3-Pin PG-SOT223 T/R

***ical: Trans MOSFET N-CH 800V 1.9A 3-Pin(2+Tab) SOT-223 T/R

***ronik: N-CH 800V 1,9A 2800mOhm SOT223

***i-Key: COOLMOS P7 800V SOT-223

***ark: Mosfet, N-Ch, 800V, 1.9A, 6.1W, Sot-223; Transistor Polarity:n Channel; Continuous Drain Current Id:1.9A; Drain Source Voltage Vds:800V; On Resistance Rds(On):2.8Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 800V, 1.9A, 6.1W, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:1.9A; Drain Source Voltage Vds:800V; On Resistance Rds(on):2.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:6.1W; Transistor Case Style:SOT-223; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS P7 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET CAN N, 800V, 1.9A, 6.1W, SOT-223; Polarità Transistor:Canale N; Corrente Continua di Drain Id:1.9A; Tensione Drain Source Vds:800V; Resistenza di Attivazione Rds(on):2.8ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:6.1W; Modello Case Transistor:SOT-223; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS P7 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

***ineon: Summary of Features: Best-in-class FOM R DS(on) * E oss; reduced Q g, C iss and C oss; Best-in-class DPAK R DS(on) of 280m; Best-in-class V (GS)th of 3V and smallest V (GS)th variation of 0.5V; Integrated Zener diode ESD protection up to Class 2 (HBM); Best-in-class quality and reliability; Fully optimized portfolio | Benefits: 0.1% to 0.6% efficiency gain and 2C to 8C lower MOSFET temperature as compared to CoolMOS C3; Enabling higher power density designs, BOM savings and lower assembly cost; Easy to drive and to design-in; Better production yield by reducing ESD related failures; Less production issues and reduced field returns; Easy to select right parts for fine tuning of designs | Target Applications: Adapter; LED; Audio; Industrial SMPS; AUX power

IPN80R3K3P7ATMA1 更多信息

CoolMOS™ 7 Superjunction MOSFETs: Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.

CoolMOS™ P7 MOSFETs: Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies.

800V CoolMOS P7 MOSFETs: Infineon 800V CoolMOS P7 MOSFETs combine best-in-class performance with ease-of-use. The P7 set a new benchmark in 800V super junction technologies. The transistors offer up to 0.6 percent efficiency gain and 2°C to 8°C lower MOSFET temperature. The transistors feature optimized device parameters like over 50% reduction in Eoss and Qg, reduced Ciss and Coss. The CoolMOS P7 also enable higher power density designs through lower switching losses and better DPAK RDS(on) products. The CoolMOS P7 are a perfect fit for low-power SMPS applications.

Market price

型號	製造商	描述	庫存	價格
IPN80R3K3P7ATMA1 DISTI # V72:2272_19084646	Infineon Technologies AG	IPN80R3K3P7	3000	3000:$0.2243 1000:$0.2646 500:$0.3192 250:$0.3425 100:$0.3429 25:$0.4295 10:$0.5058 1:$0.5883
IPN80R3K3P7ATMA1 DISTI # IPN80R3K3P7ATMA1CT-ND	Infineon Technologies AG	COOLMOS P7 800V SOT-223 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2615In Stock	1000:$0.3635 500:$0.4456 100:$0.5891 10:$0.7530 1:$0.8600
IPN80R3K3P7ATMA1 DISTI # IPN80R3K3P7ATMA1DKR-ND	Infineon Technologies AG	COOLMOS P7 800V SOT-223 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2615In Stock	1000:$0.3635 500:$0.4456 100:$0.5891 10:$0.7530 1:$0.8600
IPN80R3K3P7ATMA1 DISTI # IPN80R3K3P7ATMA1TR-ND	Infineon Technologies AG	COOLMOS P7 800V SOT-223 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	30000:$0.2878 15000:$0.2932 6000:$0.3032 3000:$0.3231
IPN80R3K3P7ATMA1 DISTI # 30680852	Infineon Technologies AG	IPN80R3K3P7	3000	3000:$0.2411 1000:$0.2844 500:$0.3431 250:$0.3682 100:$0.3686 28:$0.4617
IPN80R3K3P7ATMA1 DISTI # IPN80R3K3P7ATMA1	Infineon Technologies AG	CoolMOS P7 Power Transistor MOSFET 800V 1.9A 3-Pin PG-SOT223 T/R - Tape and Reel (Alt: IPN80R3K3P7ATMA1) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 3000	3000:$0.2599 6000:$0.2509 12000:$0.2419 18000:$0.2339 30000:$0.2289
IPN80R3K3P7ATMA1 DISTI # SP001664992	Infineon Technologies AG	CoolMOS P7 Power Transistor MOSFET 800V 1.9A 3-Pin PG-SOT223 T/R (Alt: SP001664992) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€0.3349 6000:€0.2739 12000:€0.2509 18000:€0.2319 30000:€0.2149
IPN80R3K3P7ATMA1 DISTI # 93AC7128	Infineon Technologies AG	MOSFET, N-CH, 800V, 1.9A, 6.1W, SOT-223,Transistor Polarity:N Channel,Continuous Drain Current Id:1.9A,Drain Source Voltage Vds:800V,On Resistance Rds(on):2.8ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes	2795	1000:$0.2320 500:$0.2510 250:$0.2700 100:$0.2900 50:$0.3430 25:$0.3960 10:$0.4500 1:$0.5360
IPN80R3K3P7ATMA1 DISTI # 726-IPN80R3K3P7ATMA1	Infineon Technologies AG	MOSFET LOW POWER_NEW RoHS: Compliant	11544	1:$0.6700 10:$0.5620 100:$0.3620 1000:$0.2900 3000:$0.2450 9000:$0.2360 24000:$0.2270
IPN80R3K3P7ATMA1 DISTI # 2986363	Infineon Technologies AG	MOSFET, N-CH, 800V, 1.9A, 6.1W, SOT-223 RoHS: Compliant	2795	500:£0.2530 250:£0.2750 100:£0.2980 25:£0.4260 5:£0.4680
IPN80R3K3P7ATMA1 DISTI # 2986363	Infineon Technologies AG	MOSFET, N-CH, 800V, 1.9A, 6.1W, SOT-223 RoHS: Compliant	2795	5000:$0.3700 1000:$0.3800 500:$0.4500 250:$0.4900 100:$0.5300 25:$0.7600 5:$0.8300

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