OMO ElectronicOMO Electronic
Expand menu
0 購物車

PD57018-E

PD57018-E
Mfr. #:
PD57018-E
製造商:
STMicroelectronics
描述:
RF MOSFET Transistors POWER RF Transistor
生命週期:
製造商新產品
數據表:
PD57018-E 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
PD57018-E 更多信息 PD57018-E Product Details
產品屬性
屬性值
製造商：
意法半導體
產品分類：
射頻 MOSFET 晶體管
RoHS：
Y
晶體管極性：
N通道
技術：
矽
Id - 連續漏極電流：
2.5 A
Vds - 漏源擊穿電壓：
65 V
Rds On - 漏源電阻：
760 mOhms
獲得：
16.5 dB
輸出功率：
18 W
最低工作溫度：
- 65 C
最高工作溫度：
+ 150 C
安裝方式：
貼片/貼片
包裝/案例：
PowerSO-10RF-Formed-4
打包：
管子
配置：
單身的
高度：
3.5 mm
長度：
7.5 mm
工作頻率：
1 GHz
系列：
PD57018-E
類型：
射頻功率MOSFET
寬度：
9.4 mm
品牌：
意法半導體
正向跨導 - 最小值：
1 S
頻道模式：
增強
濕氣敏感：
是的
Pd - 功耗：
31.7 W
產品類別：
射頻 MOSFET 晶體管
出廠包裝數量：
400
子類別：
MOSFET
Vgs - 柵源電壓：
20 V
單位重量：
0.105822 oz
Tags
PD5701, PD570, PD57, PD5
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***th Star Micro
Transistor MOSFET N-CH 65V 2.5A 4-Pin (2+2Tab) PowerSO-10RF (Formed lead) Tube
***icroelectronics
18W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package
***icroelectronics SCT
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
***ure Electronics
PD57018-E Series 1 GHz 18 W 65 V N-Channel RF Power Transistor - POWERSO-10RF
***r Electronics
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
***nell
RF TRANSISTOR, 65V, 945MHZ, POWERSO10RF; Drain Source Voltage Vds: 65V; Continuous Drain Current Id: 2.5A; Power Dissipation Pd: 31.7W; Operating Frequency Min: -; Operating Frequency Max: 945MHz; RF Transistor Case: PowerSO-1
***icroelectronics
18W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package
***icroelectronics SCT
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
***p One Stop
Trans RF MOSFET N-CH 65V 2.5A 3-Pin PowerSO-10RF (Formed lead) T/R
***r Electronics
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
***icroelectronics
18W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package
***p One Stop
Trans RF MOSFET N-CH 65V 2.5A 3-Pin(2+Tab) PowerSO-10RF (Straight lead) T/R
***icroelectronics SCT
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
***r Electronics
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
***(Formerly Allied Electronics)
IRF7103PBF Dual N-channel MOSFET Transistor, 3 A, 50 V, 8-Pin SOIC | Infineon IRF7103PBF
***eco
Transistor MOSFET N Channel 50 Volt 3 Amp 8-Pin SOIC Tape and Reel
***itex
Transistor: 2xN-MOSFET; unipolar; 50V; 3A; 0.13ohm; 2W; -55+150 deg.C; SMD; SO8
***ure Electronics
Dual N-Channel 50 V 0.13 Ohm 12 nC HEXFET® Power Mosfet - SOIC-8
***et Japan
Transistor MOSFET Array Dual N-CH 50V 3A 8-Pin SOIC T/R
***nell
MOSFET, DUAL NN LOGIC SO-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 3A; Drain Source Voltage Vds: 50V; On Resistance Rds(on): 0.13ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -; Power Di
***ark
Channel Type:Dual N Channel; Drain Source Voltage Vds N Channel:50V; Drain Source Voltage Vds P Channel:-; Continuous Drain Current Id N Channel:3A; Continuous Drain Current Id P Channel:-; No. Of Pins:8Pins; Product Range:- Rohs Compliant: Yes |Infineon IRF7103TRPBF.
***(Formerly Allied Electronics)
MOSFET; P-Ch; Vds -60V; Vgs +/- 20V; Rds(on) 150mohm; Id 4.7A; SO-8; Pd 5W
***ure Electronics
SI9407BDY Series 60 V 0.12 Ohm 22 nC P-Channel Surface Mount Mosfet - SOIC-8
***enic
60V 4.7A 2.4W 120m´Î@10V3.2A 3V@250Ã×A P Channel SOIC-8_150mil MOSFETs ROHS
***nsix Microsemi
Small Signal Field-Effect Transistor, 4.7A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ark
Mosfet, P Channel, -60V, -4.7A, Soic-8, Full Reel; Channel Type:p Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:4.7A; Transistor Mounting:surface Mount; Rds(On) Test Voltage:10V; Power Dissipation:5W Rohs Compliant: No
***nell
MOSFET, P CH, 60V, 4.7A, 8SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-4.7A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.1ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; Operating Temperature Range:-55°C to +150°C
***(Formerly Allied Electronics)
IRFL014TRPBF N-channel MOSFET Transistor; 2.7 A; 60 V; 3 + Tab-Pin SOT-223
***ure Electronics
Single N-Channel 60 V 0.2 Ohms Surface Mount Power Mosfet - SOT-223-3
***ical
Trans MOSFET N-CH 60V 2.7A 4-Pin(3+Tab) SOT-223 T/R
***SIT Distribution GmbH
Small Signal Field-Effect Transistor, 2.7A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
型號 製造商 描述 庫存 價格
PD57018-E
DISTI # V36:1790_06556195		STMicroelectronicsTrans RF MOSFET N-CH 65V 2.5A 3-Pin PowerSO-10RF (Formed lead) Tube
RoHS: Compliant		5
  • 100:$23.6900
  • 10:$27.2500
  • 1:$29.4000
PD57018-E
DISTI # 497-5305-5-ND		STMicroelectronicsFET RF 65V 945MHZ PWRSO10
RoHS: Compliant
Min Qty: 1
Container: Tube		555In Stock
  • 100:$25.5208
  • 50:$28.5430
  • 1:$32.4000
PD57018-E
DISTI # 16486842		STMicroelectronicsTrans RF MOSFET N-CH 65V 2.5A 3-Pin PowerSO-10RF (Formed lead) Tube
RoHS: Compliant		2490
  • 3:$31.7500
PD57018-E
DISTI # 24188752		STMicroelectronicsTrans RF MOSFET N-CH 65V 2.5A 3-Pin PowerSO-10RF (Formed lead) Tube
RoHS: Compliant		22
  • 100:$24.5000
  • 10:$28.6906
  • 1:$31.1040
PD57018-E
DISTI # 26164719		STMicroelectronicsTrans RF MOSFET N-CH 65V 2.5A 3-Pin PowerSO-10RF (Formed lead) Tube
RoHS: Compliant		5
  • 1:$29.4000
PD57018-E
DISTI # PD57018-E		STMicroelectronicsTrans MOSFET N-CH 65V 2.5A 3-Pin PowerSO-10RF (Formed lead) Tube (Alt: PD57018-E)
RoHS: Compliant
Min Qty: 400
Container: Tube		Asia - 0
  • 400:$23.4876
  • 800:$22.3691
  • 1200:$21.3524
  • 2000:$20.4240
  • 4000:$19.5730
  • 10000:$19.0440
  • 20000:$18.5428
PD57018-E
DISTI # PD57018-E		STMicroelectronicsTrans MOSFET N-CH 65V 2.5A 3-Pin PowerSO-10RF (Formed lead) Tube - Bag (Alt: PD57018-E)
RoHS: Compliant
Min Qty: 400
Container: Bag		Americas - 0
  • 400:$25.0900
  • 800:$23.8900
  • 1600:$22.8900
  • 2400:$21.7900
  • 4000:$21.3900
PD57018-E
DISTI # 45AC7468		STMicroelectronicsRF TRANSISTOR, 65V, 945MHZ, POWERSO10RF,Drain Source Voltage Vds:65V,Continuous Drain Current Id:2.5A,Power Dissipation Pd:31.7W,Operating Frequency Min:-,Operating Frequency Max:945MHz,RF Transistor Case:PowerSO-10RF,No. of RoHS Compliant: Yes306
  • 1:$35.2200
  • 5:$34.8900
  • 10:$32.7400
  • 25:$31.4200
  • 50:$29.9300
  • 100:$28.4400
  • 250:$27.2800
PD57018-E
DISTI # 511-PD57018-E		STMicroelectronicsRF MOSFET Transistors POWER RF Transistor
RoHS: Compliant		92
  • 1:$32.4100
  • 5:$32.0700
  • 10:$29.8900
  • 25:$28.5500
  • 100:$25.5300
  • 250:$24.3500
PD57018TR-E
DISTI # 511-PD57018TR-E		STMicroelectronicsRF MOSFET Transistors POWER R.F.
RoHS: Compliant		0
  • 1:$32.4100
  • 5:$32.0700
  • 10:$29.8900
  • 25:$28.5500
  • 100:$25.5300
  • 250:$24.3500
  • 600:$23.1800
PD57018-E
DISTI # PD57018-E		STMicroelectronicsRF POWER TRANSISTOR
RoHS: Compliant		2490
  • 400:$24.3600
  • 500:$23.0600
  • 1000:$21.9000
PD57018-E
DISTI # C1S730200502153		STMicroelectronicsTrans RF MOSFET N-CH 65V 2.5A 3-Pin(2+Tab) PowerSO-10RF (Formed lead) Tube
RoHS: Compliant		22
  • 10:$30.3000
  • 5:$33.0000
  • 1:$40.1000
PD57018-E
DISTI # 2807339		STMicroelectronicsRF TRANSISTOR, 65V, 945MHZ, POWERSO10RF
RoHS: Compliant		276
  • 1:£24.3300
  • 5:£23.2300
  • 10:£22.1200
  • 50:£20.5000
  • 100:£18.8700
PD57018-E
DISTI # 2807339		STMicroelectronicsRF TRANSISTOR, 65V, 945MHZ, POWERSO10RF
RoHS: Compliant		276
  • 1:$51.6400
  • 50:$45.5000
  • 100:$40.6800
圖片 型號 描述
LM358ADR

Mfr.#: LM358ADR

OMO.#: OMO-LM358ADR

 Operational Amplifiers - Op Amps Dual Op Amp
INA168NA/3K

Mfr.#: INA168NA/3K

OMO.#: OMO-INA168NA-3K

 Current & Power Monitors & Regulators Hi-Sd Msmnt Current Shunt Mntr Crnt Otp
IRFP4668PBF

Mfr.#: IRFP4668PBF

OMO.#: OMO-IRFP4668PBF

 MOSFET MOSFT 200V 130A 9.7mOhm 161nC Qg
DK0032T

Mfr.#: DK0032T

OMO.#: OMO-DK0032T

 Capacitor Kits 15pcs 16 values 600F Series Hi Q Kit
2499-003-X7W0-103ZLF

Mfr.#: 2499-003-X7W0-103ZLF

OMO.#: OMO-2499-003-X7W0-103ZLF

 EMI Feedthrough Filters 10000pF -20/80% 250Vdc @125C
INA168NA/3K

Mfr.#: INA168NA/3K

OMO.#: OMO-INA168NA-3K-TEXAS-INSTRUMENTS

 全新原裝
VLS6045EX-151M

Mfr.#: VLS6045EX-151M

OMO.#: OMO-VLS6045EX-151M-TDK

 Fixed Inductors 150uH
LM358ADR

Mfr.#: LM358ADR

OMO.#: OMO-LM358ADR-TEXAS-INSTRUMENTS

 Operational Amplifiers - Op Amps Dual Op Amp
0402ZD105KAT2A

Mfr.#: 0402ZD105KAT2A

OMO.#: OMO-0402ZD105KAT2A-AVX

 Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 1uF 10volts X5R 10%
ADALM-PLUTO

Mfr.#: ADALM-PLUTO

OMO.#: OMO-ADALM-PLUTO-ANALOG-DEVICES

 AD9363 RF Transceiver Development Kit
可用性
庫存:
201
訂購:
2184
輸入數量:
PD57018-E的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$32.41
US$32.41
5
US$32.07
US$160.35
10
US$29.89
US$298.90
25
US$28.55
US$713.75
100
US$25.53
US$2 553.00
250
US$24.35
US$6 087.50
從...開始
最新產品
More Newest Products
Top