FZ800R33KF2C

Mfr. #:: FZ800R33KF2C
製造商:: Infineon Technologies
描述:: IGBT Modules 3300V 800A SINGLE
生命週期:: 製造商新產品
數據表:: FZ800R33KF2C 數據表
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ECAD Model:

產品屬性
屬性值

製造商：: 英飛凌

產品分類：: IGBT 模塊

RoHS：: N

產品：: IGBT 矽模塊

配置：: 單身的

集電極-發射極電壓 VCEO 最大值：: 3300 V

集電極-發射極飽和電壓：: 3.4 V

25 C 時的連續集電極電流：: 1300 A

柵極-發射極漏電流：: 400 nA

Pd - 功耗：: 9.6 kW

包裝/案例：: 國際海事組織

最低工作溫度：: - 40 C

最高工作溫度：: + 125 C

打包：: 托盤

高度：: 38 mm

長度：: 140 mm

寬度：: 130 mm

品牌：: 英飛凌科技

安裝方式：: 底盤安裝

最大柵極發射極電壓：: 20 V

產品類別：: IGBT 模塊

出廠包裝數量：: 2

子類別：: IGBT

第 # 部分別名：: FZ800R33KF2CNOSA1 SP000100609

Tags: FZ800R33KF2C, FZ800R33KF2, FZ800R33KF, FZ800R3, FZ800R, FZ800, FZ80, FZ8

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FZ800R33KF2C 描述

***roFlash: Trans IGBT Module N-CH 3.3KV 1300A 7-pin IHV130-3

***ineon SCT: IHV A 3300 V, 800 A 130 mm single-switch IGBT Module with IGBT2 and Emitter Controlled diode - The experienced solution for traction and industry applications, A-IHV130-3

***ineon: 3300V IHV 130mm single switch IGBT Module with IGBT2 - The best solution for your traction and industry applications | Summary of Features: High reliability and robust module construction | Benefits: High power density for compact inverter designs; Standardized housing | Target Applications: drives; wind; traction; cav

***ical: Trans IGBT Module N-CH 1700V 404A 1450000mW 7-Pin 62MM-1 Tray

***ark: Igbt, Module, N-Ch, 1.7Kv, 404A; Transistor Polarity:N Channel; Dc Collector Current:404A; Collector Emitter Saturation Voltage Vce(On):2V; Power Dissipation Pd:1.45Kw; Collector Emitter Voltage V(Br)Ceo:1.7Kv; Transistor Case Rohs Compliant: Yes |Infineon FF300R17KE3HOSA1

***ineon: Our well-known 62 mm 1700V dual IGBT modules are the right choice for your design. | Summary of Features: Superior solution for frequency controlled inverter drives; UL/CSA Certification with UL1557 E83336; Operating temperature up to 150 C; Optimized switching characteristic like softness and reduced switching losses; Existing packages with higher current capability; RoHS compliant | Benefits: PrimeSTACKs available for fast development with minimum effort; Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; wind; solar; traction

***p One Stop: Trans IGBT Module N-CH 1200V 700A 3900000mW 5-Pin 62MM-2 Tray

***nell: TRANSISTOR, IGBT MODULE, 1.2KV, 700A; Transistor Polarity: N Channel; DC Collector Current: 700A; Collector Emitter Saturation Voltage Vce(on): 3.2V; Power Dissipation Pd: 3.9kW; Collector Emitter Voltage V(br)ceo: 1.2kV; Tra

***ark: Transistor, Igbt Module, 1.2Kv, 700A; Continuous Collector Current:700A; Collector Emitter Saturation Voltage:3.2V; Power Dissipation:3.9Kw; Operating Temperature Max:125°C; Igbt Termination:Stud; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes |Infineon FZ600R12KS4HOSA1

***ineon: Our well-known 62 mm 1200V single switch IGBT modules with IGBT2 Fast for high-frequency switching are the right choice for your design. | Summary of Features: Superior solution for frequency controlled inverter drives; UL/CSA Certification with UL1557 E83336; Operating temperature up to 150 C; Optimized switching characteristic like softness and reduced switching losses; Existing packages with higher current capability; RoHS compliant | Benefits: Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; cav; ups; induction-heating; welding

***ical: Trans IGBT Module N-CH 1200V 72A 350000mW 17-Pin EconoPACK 2A

***et: Transistor IGBT Module N-CH 1200V 72A 20V Screw Mount Tray

***el Electronic: INFINEON BSM50GD120DN2 IGBT Array & Module Transistor, N Channel, 72 A, 3 V, 350 W, 1.2 kV, EconoPACK

***nsix Microsemi: Insulated Gate Bipolar Transistor, 72A I(C), 1200V V(BR)CES, N-Channel

***ment14 APAC: IGBT MODULE, 1200V, ECONOPACK3; Module Configuration:Six; DC Collector Current:72A; Collector Emitter Voltage Vces:3V; Power Dissipation Pd:350W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +125°C; Transistor Case Style:Econopack 3; No. of Pins:17; SVHC:No SVHC (20-Jun-2011); Current Ic Continuous a Max:50A; Current Temperature:80°C; Full Power Rating Temperature:25°C; No. of Transistors:6; Package / Case:Econopack 3; Power Dissipation Max:350W; Power Dissipation Pd:350W; Power Dissipation Pd:350W; Pulsed Current Icm:100A; Termination Type:Solder; Voltage Vce Sat Typ:2.5V; Voltage Vces:1.2kV

Market price

型號	製造商	描述	庫存	價格
FZ800R33KF2CNOSA1 DISTI # FZ800R33KF2CNOSA1-ND	Infineon Technologies AG	MODULE IGBT A-IHV130-3 RoHS: Not compliant Min Qty: 2 Container: Tray	Temporarily Out of Stock	2:$1,421.1300
FZ800R33KF2CNOSA1 DISTI # FZ800R33KF2CNOSA1	Infineon Technologies AG	TRACTION - Trays (Alt: FZ800R33KF2CNOSA1) RoHS: Not Compliant Min Qty: 2 Container: Tray	Americas - 0	2:$1,462.0000 4:$1,409.0000 8:$1,358.0000 12:$1,313.0000 20:$1,289.0000
1SP0635S2M1-FZ800R33KF2C DISTI # 1SP0635SF8R332C	Power Integrations	PLUG-AND-PLAY IGBT DRIVER RoHS: Compliant	0
1SP0635D2S1-FZ800R33KF2C DISTI # 1SP0635DF833F2C	Power Integrations	PLUG-AND-PLAY IGBT DRIVER RoHS: Compliant	0
1SP0635V2M1-FZ800R33KF2C DISTI # 1SP0635VF8R332C	Power Integrations	PLUG-AND-PLAY IGBT DRIVER RoHS: Compliant	0

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