NTMFS4119NT3G

Mfr. #:: NTMFS4119NT3G
製造商:: ON Semiconductor
描述:: MOSFET NFET 32A 30V 2.7MOH
生命週期:: 製造商新產品
數據表:: NTMFS4119NT3G 數據表
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HTML Datasheet:: NTMFS4119NT3G Datasheet NTMFS4119NT3G Datasheet (P4-P5)
ECAD Model:

產品屬性
屬性值

製造商：: 安森美半導體

產品分類：: MOSFET

RoHS：: Y

技術：: 矽

安裝方式：: 貼片/貼片

包裝/案例：: SO-FL-8

通道數：: 1 Channel

晶體管極性：: N通道

Vds - 漏源擊穿電壓：: 30 V

Id - 連續漏極電流：: 30 A

Rds On - 漏源電阻：: 3.5 mOhms

Vgs - 柵源電壓：: 12 V

最低工作溫度：: - 55 C

最高工作溫度：: + 150 C

Pd - 功耗：: 2.3 W

配置：: 單身的

頻道模式：: 增強

打包：: 捲軸

高度：: 1.05 mm

長度：: 4.9 mm

晶體管類型：: 1 N-Channel

類型：: MOSFET

寬度：: 5.8 mm

品牌：: 安森美半導體

正向跨導 - 最小值：: 23 S

秋季時間：: 40 ns

產品類別：: MOSFET

上升時間：: 26 ns

出廠包裝數量：: 5000

子類別：: MOSFET

典型關斷延遲時間：: 35 ns

典型的開啟延遲時間：: 28 ns

Tags: NTMFS4119NT, NTMFS411, NTMFS41, NTMFS4, NTMFS, NTMF, NTM

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

NTMFS4119NT3G 描述

***emi: Power MOSFET 30V 30A 3.5 mOhm Single N-Channel SO-8FL

***ser: MOSFETs- Power and Small Signal NFET 32A 30V 2.7MOH

***r Electronics: Small Signal Field-Effect Transistor, 11A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***emi: Power MOSFET 30V 35A 2.2 mOhm Single N-Channel SO-8FL

***ser: MOSFETs- Power and Small Signal NFET 40A 30V 1.8MO

***ical: Trans MOSFET N-CH 30V 25A 8-Pin SO-FL T/R

***r Electronics: Power Field-Effect Transistor, 13.5A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:35A; On Resistance, Rds(on):2.2mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1V ;RoHS Compliant: Yes

***emi: Power MOSFET 30V 35A 2.2 mOhm Single N-Channel SO-8FL

***ser: MOSFETs- Power and Small Signal NFET 40A 30V 1.8MO

***et: Trans MOSFET N-CH 30V 25A 8-Pin SO-FL T/R

***ponent Stockers USA: 13.5 A 30 V 0.0022 ohm N-CHANNEL Si POWER MOSFET

***ment14 APAC: N CHANNEL MOSFET, 30V, 35A, DFN5; Transi

***r Electronics: Power Field-Effect Transistor, 13.5A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***S: French Electronic Distributor since 1988

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:35A; On Resistance, Rds(on):2.2mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DFN ;RoHS Compliant: Yes

***emi: Power MOSFET 30V 18A 3.4 mOhm Single N-Channel SO-8

***ical: Trans MOSFET N-CH 30V 15A 8-Pin SOIC N T/R

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:18A; On Resistance, Rds(on):3.4mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1V ;RoHS Compliant: Yes

***ark: MOSFET Transistor, P Channel, -12 A, -30 V, 10 mohm, -10 V, -1.8 V

***ure Electronics: Single P-Channel 30 V 19.7 mOhm 52 nC HEXFET® Power Mosfet - SOIC-8

***ineon SCT: -30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

***ineon: Benefits: RoHS Compliant; P-Channel MOSFET | Target Applications: Battery Protection; Load Switch High Side; Load Switch Low Side

***nell: MOSFET,P CH,30V,12A,SO-8; Transistor Polarity: P Channel; Continuous Drain Current Id: -12A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.01ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1.8V; Power D

*** Source Electronics: MOSFET P-CH 30V 19.7A 8-SOIC / Trans MOSFET P-CH 30V 19.7A 8-Pin SOIC N T/R

***ure Electronics: SI4425DDY Series 30 V 9.8 mOhm 80 nC P-Channel Surface Mount Mosfet - SOIC-8

***ment14 APAC: MOSFET, P-CH, 30V, 19.7A, SO8; Transistor Polarity:P Channel; Continuous Drain Current Id:-19.7A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):8.1mohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:5.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-19.7A; Power Dissipation Pd:5.7W; Voltage Vgs Max:20V

***eco: Transistor MOSFET Negative Channel 30 Volt 13A 8-Pin SOIC T/R

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.011Ohm;ID 13A;SO-8;PD 2.5W;VGS +/-20V;VF 1

***ure Electronics: Single N-Channel 30 V 0.011 Ohm 52 nC HEXFET® Power Mosfet - SOIC-8

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Low Switching Losses; Low Conduction Losses

***ical: Trans MOSFET N-CH 30V 13A 8-Pin SOIC Tube

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***el Electronic: Transistors - FETs, MOSFETs - Single 1 (Unlimited) 8-SOIC (0.154, 3.90mm Width) Surface Mount MOSFET (Metal Oxide) N-Channel Tube 11m Ω @ 7.3A, 10V 13A Ta -55°C~150°C TJ MOSFET N-CH 30V 13A 8-SOIC

***nell: MOSFET, N, LOGIC, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 12A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.011ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipat

Market price

型號	製造商	描述	庫存	價格
NTMFS4119NT3G DISTI # NTMFS4119NT3G-ND	ON Semiconductor	MOSFET N-CH 30V 11A SO8FL RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	Limited Supply - Call
NTMFS4119NT3G	ON Semiconductor	RoHS: Not Compliant	60000	1000:$0.5500 500:$0.5800 100:$0.6100 25:$0.6300 1:$0.6800
NTMFS4119NT3G DISTI # 863-NTMFS4119NT3G	ON Semiconductor	MOSFET NFET 32A 30V 2.7MOH RoHS: Compliant	0

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