BSC014N04LSIATMA1

BSC014N04LSIATMA1
Mfr. #:
BSC014N04LSIATMA1
製造商:
Infineon Technologies
描述:
MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS
生命週期:
製造商新產品
數據表:
BSC014N04LSIATMA1 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
BSC014N04LSIATMA1 更多信息
產品屬性
屬性值
製造商:
英飛凌
產品分類:
MOSFET
RoHS:
Y
技術:
安裝方式:
貼片/貼片
包裝/案例:
TDSON-8
通道數:
1 Channel
晶體管極性:
N通道
Vds - 漏源擊穿電壓:
40 V
Id - 連續漏極電流:
100 A
Rds On - 漏源電阻:
1.2 mOhms
Vgs th - 柵源閾值電壓:
1.2 V
Vgs - 柵源電壓:
20 V
Qg - 門電荷:
77 nC
最低工作溫度:
- 55 C
最高工作溫度:
+ 150 C
Pd - 功耗:
96 W
配置:
單身的
頻道模式:
增強
商品名:
優化MOS
打包:
捲軸
高度:
1.27 mm
長度:
5.9 mm
系列:
OptiMOS 5
晶體管類型:
1 N-Channel
寬度:
5.15 mm
品牌:
英飛凌科技
正向跨導 - 最小值:
110 S
秋季時間:
11 ns
產品類別:
MOSFET
上升時間:
50 ns
出廠包裝數量:
5000
子類別:
MOSFET
典型關斷延遲時間:
55 ns
典型的開啟延遲時間:
16 ns
第 # 部分別名:
BSC014N04LSI SP000953212
單位重量:
0.004180 oz
Tags
BSC014N04, BSC014N0, BSC014, BSC01, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 40V 100A 8-Pin TDSON FL T/R
***ical
Power-MOSFET, 40V
***ineon
New 40V and 60V product families, feature not only the industrys lowest R DS(on) but also a perfect switching behavior for fast switching applications. 15% lower R DS(on) and 31% lower figure of merit (R DS(on) x Q g) compared to alternative devices has been realized by advanced thin wafer technology. | Summary of Features: Optimized for synchronous rectification; 15% lower R DS(on) than alternative devices; 31% improvement of FOM over similar devices; Integrated Schottky-like diode; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control; Or-ing switches
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
40V OptiMOS™ Power MOSFETs
Infineon's 40V OptiMOS Power MOSFETs feature 35% lower RDS(on) and 45% lower Figure of Merit (RDS(on) x Qg) compared to alternative devices. These devices are optimized for synchronous rectification in switched mode power supplies (SMPS) as well as a broad range of industrial applications such as motor control, solar micro inverters and fast switching DC/DC converters. In addition, this new generation of 40V devices offers higher switching frequencies and are enabled which results in even higher power density.  A monolithic integrated Schottky-like diode in the 40V SuperSO8 package (5mm x 6mm) leads to higher efficiency and a drastic reduction of the voltage overshoot. This in turn reduces the need for a snubber circuit and saves engineering effort and cost.Learn More
型號 製造商 描述 庫存 價格
BSC014N04LSIATMA1
DISTI # BSC014N04LSIATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 40V 100A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
20577In Stock
  • 1000:$1.6722
  • 500:$1.9813
  • 100:$2.4966
  • 10:$3.0630
  • 1:$3.3700
BSC014N04LSIATMA1
DISTI # BSC014N04LSIATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 40V 100A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
20577In Stock
  • 1000:$1.6722
  • 500:$1.9813
  • 100:$2.4966
  • 10:$3.0630
  • 1:$3.3700
BSC014N04LSIATMA1
DISTI # BSC014N04LSIATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 40V 100A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
20000In Stock
  • 5000:$1.4734
BSC014N04LSIATMA1
DISTI # BSC014N04LSIATMA1
Infineon Technologies AGTrans MOSFET N-CH 40V 100A 8-Pin TDSON FL T/R - Tape and Reel (Alt: BSC014N04LSIATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 0
  • 5000:$1.2900
  • 10000:$1.1900
  • 20000:$1.1900
  • 30000:$1.0900
  • 50000:$1.0900
BSC014N04LSIATMA1
DISTI # SP000953212
Infineon Technologies AGTrans MOSFET N-CH 40V 100A 8-Pin TDSON FL T/R (Alt: SP000953212)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel
Europe - 0
  • 5000:€1.9139
  • 10000:€1.4899
  • 20000:€1.2389
  • 30000:€1.1559
  • 50000:€1.0989
BSC014N04LSIATMA1
DISTI # 50Y1798
Infineon Technologies AGMOSFET, N-CH, 40V, 100A, 150DEG C, 96W,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0012ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes0
  • 1000:$1.7500
  • 500:$2.0900
  • 250:$2.2100
  • 100:$2.3400
  • 50:$2.5200
  • 25:$2.7000
  • 10:$2.8900
  • 1:$3.3600
BSC014N04LSI
DISTI # 726-BSC014N04LSI
Infineon Technologies AGMOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS
RoHS: Compliant
18687
  • 1:$2.6800
  • 10:$2.2800
  • 100:$1.8200
  • 500:$1.6000
  • 1000:$1.3200
BSC014N04LSIATMA1
DISTI # 726-BSC014N04LSIATMA
Infineon Technologies AGMOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS
RoHS: Compliant
110
  • 1:$2.6800
  • 10:$2.2800
  • 100:$1.8200
  • 500:$1.6000
  • 1000:$1.3200
BSC014N04LSIATMA1
DISTI # 2480707
Infineon Technologies AGMOSFET, N-CH, 40V, 100A, TDSON-8
RoHS: Compliant
0
  • 500:£1.2400
  • 250:£1.3300
  • 100:£1.4200
  • 10:£1.7700
  • 1:£2.3600
BSC014N04LSIATMA1
DISTI # 2480707
Infineon Technologies AGMOSFET, N-CH, 40V, 100A, TDSON-8
RoHS: Compliant
0
  • 1000:$2.0900
  • 5000:$2.0900
  • 500:$2.5400
  • 100:$2.8800
  • 10:$3.6200
  • 1:$4.2500
BSC014N04LSIATMA1
DISTI # 2480707RL
Infineon Technologies AGMOSFET, N-CH, 40V, 100A, TDSON-8
RoHS: Compliant
0
  • 1000:$2.0900
  • 5000:$2.0900
  • 500:$2.5400
  • 100:$2.8800
  • 10:$3.6200
  • 1:$4.2500
圖片 型號 描述
SP1007-01ETG

Mfr.#: SP1007-01ETG

OMO.#: OMO-SP1007-01ETG

TVS Diodes / ESD Suppressors 1CH 8KV 6V
SN74LVC2G125DCUR

Mfr.#: SN74LVC2G125DCUR

OMO.#: OMO-SN74LVC2G125DCUR

Buffers & Line Drivers Tri-State Dual Bus
FDC5661N-F085

Mfr.#: FDC5661N-F085

OMO.#: OMO-FDC5661N-F085

MOSFET Trans N-Ch 60V 4.3A
MBRA160T3G

Mfr.#: MBRA160T3G

OMO.#: OMO-MBRA160T3G

Schottky Diodes & Rectifiers 1A 60V
FTSH-110-01-L-DV-007-K

Mfr.#: FTSH-110-01-L-DV-007-K

OMO.#: OMO-FTSH-110-01-L-DV-007-K

Headers & Wire Housings .050" Micro Terminal Strip
RC0402FR-0710KL

Mfr.#: RC0402FR-0710KL

OMO.#: OMO-RC0402FR-0710KL

Thick Film Resistors - SMD 10K OHM 1%
SP1007-01ETG

Mfr.#: SP1007-01ETG

OMO.#: OMO-SP1007-01ETG-LITTELFUSE

TVS Diodes - Transient Voltage Suppressors 1CH 8KV 6V
SN74LVC2G125DCUR

Mfr.#: SN74LVC2G125DCUR

OMO.#: OMO-SN74LVC2G125DCUR-TEXAS-INSTRUMENTS

Buffers & Line Drivers Tri-State Dual Bus
FDC5661N-F085

Mfr.#: FDC5661N-F085

OMO.#: OMO-FDC5661N-F085-ON-SEMICONDUCTOR

MOSFET N-CH 60V 6-SSOT
MBRA160T3G

Mfr.#: MBRA160T3G

OMO.#: OMO-MBRA160T3G-ON-SEMICONDUCTOR

Schottky Diodes & Rectifiers 1A 60V
可用性
庫存:
Available
訂購:
1992
輸入數量:
BSC014N04LSIATMA1的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
1
US$2.67
US$2.67
10
US$2.27
US$22.70
100
US$1.81
US$181.00
500
US$1.59
US$795.00
1000
US$1.31
US$1 310.00
由於2021年半導體供不應求,低於2021年之前的正常價格,請發詢價確認。
從...開始
最新產品
Top