HGTP7N60C3D

Mfr. #:: HGTP7N60C3D
製造商:: ON Semiconductor / Fairchild
描述:: IGBT Transistors 14a 600V N-Ch IGBT UFS Series
生命週期:: 製造商新產品
數據表:: HGTP7N60C3D 數據表
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ECAD Model:

產品屬性
屬性值

製造商：: 安森美半導體

產品分類：: IGBT晶體管

RoHS：: Y

技術：: 矽

包裝/案例：: TO-220-3

安裝方式：: 通孔

配置：: 單身的

集電極-發射極電壓 VCEO 最大值：: 600 V

集電極-發射極飽和電壓：: 1.6 V

最大柵極發射極電壓：: 20 V

25 C 時的連續集電極電流：: 14 A

Pd - 功耗：: 60 W

最低工作溫度：: - 40 C

最高工作溫度：: + 150 C

打包：: 管子

連續集電極電流 Ic 最大值：: 14 A

高度：: 9.4 mm

長度：: 10.67 mm

寬度：: 4.83 mm

品牌：: 安森美半導體/飛兆半導體

連續集電極電流：: 14 A

柵極-發射極漏電流：: +/- 250 nA

產品類別：: IGBT晶體管

出廠包裝數量：: 400

子類別：: IGBT

第 # 部分別名：: HGTP7N60C3D_NL

單位重量：: 0.211644 oz

Tags: HGTP7N60C, HGTP7, HGTP, HGT

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

HGTP7N60C3D 描述

***ical: Trans IGBT Chip N-CH 600V 14A 3-Pin(3+Tab) TO-220AB Rail

***inecomponents.com: 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

***fin: Transistor NPN Mos HGTP7N60C3D FAIRCHILD Ampere=14 V=600 TO220

***et: UFS SERIES N-CHANNEL IGBT WITH ANTI-PARALLEL HYPERFAST DIODE

***ser: IGBTs 14a, 600V, N-Ch IGBT UFS Series

***C: IGBT 600V 14A 60W TO220AB

***nell: IGBT, 600V, 14A, TO-220

***ment14 APAC: Prices include import duty and tax.

***ark: IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:14A; Collector Emitter Saturation Voltage, Vce(sat):2V; Power Dissipation, Pd:60W; Package/Case:TO-220AB ;RoHS Compliant: Yes

Market price

型號	製造商	描述	庫存	價格
HGTP7N60C3D DISTI # HGTP7N60C3D-ND	ON Semiconductor	IGBT 600V 14A 60W TO220AB RoHS: Compliant Min Qty: 400 Container: Tube	Limited Supply - Call
HGTP7N60C3D DISTI # HGTP7N60C3D	ON Semiconductor	UFS SERIES N-CHANNEL IGBT WITH ANTI-PARALLEL HYPERFAST DIODE - Bulk (Alt: HGTP7N60C3D) Min Qty: 302 Container: Bulk	Americas - 0	3020:$1.4900 302:$1.5900 604:$1.5900 906:$1.5900 1510:$1.5900
HGTP7N60C3D DISTI # 58K8906	ON Semiconductor	SINGLE IGBT, 600V, 14A,DC Collector Current:14A,Collector Emitter Saturation Voltage Vce(on):1.6V,Power Dissipation Pd:60W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes	0
HGTP7N60C3D DISTI # 512-HGTP7N60C3D	ON Semiconductor	IGBT Transistors 14a 600V N-Ch IGBT UFS Series RoHS: Compliant	0
HGTP7N60C3D	Fairchild Semiconductor Corporation	Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-220AB RoHS: Compliant	115	1000:$1.0900 500:$1.1500 100:$1.2000 25:$1.2500 1:$1.3400
HGTP7N60C3D	Harris Semiconductor	Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-220AB RoHS: Compliant	18321	1000:$1.7000 500:$1.7900 100:$1.8600 25:$1.9400 1:$2.0900
HGTP7N60C3D... DISTI # 1738519	ON Semiconductor	RoHS: Compliant	0	2500:$2.4800 1000:$2.7400 500:$3.1300 100:$3.4700 10:$4.1100 1:$4.6000

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