IS43R16800E-5TLI

IS43R16800E-5TLI
Mfr. #:
IS43R16800E-5TLI
製造商:
ISSI
描述:
DRAM 128M (8Mx16) 200MHz 2.5v DDR SDRAM
生命週期:
製造商新產品
數據表:
IS43R16800E-5TLI 數據表
交貨:
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ECAD Model:
更多信息:
IS43R16800E-5TLI 更多信息
產品屬性
屬性值
製造商
ISSI,集成矽解決方案公司
產品分類
記憶
系列
IS43R16800E
類型
DDR1
打包
托盤替代包裝
安裝方式
貼片/貼片
包裝盒
TSOP-66
工作溫度
-40°C ~ 85°C (TA)
界面
平行線
電壓供應
2.3 V ~ 2.7 V
供應商-設備-包
66-TSOP II
內存大小
128M (8M x 16)
內存型
DDR內存
速度
200MHz
訪問時間
5 ns
格式化內存
內存
最高工作溫度
+ 85 C
最低工作溫度
- 40 C
組織
8 M x 16
電源電流最大值
240 mA
數據總線寬度
16 bit
最大電源電壓
2.7 V
電源電壓最小值
2.3 V
最大時鐘頻率
200 MHz
Tags
IS43R16800E-5TLI, IS43R16800E-5, IS43R16800E, IS43R168, IS43R1, IS43R, IS43, IS4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    E**y
    E**y
    RO

    product as described.

    2019-06-28
    V***n
    V***n
    RU

    Thank you.

    2019-07-06
DDR SDRAM
ISSI's 512-Mbit DDR SDRAM achieves high speed data transfer using pipeline architecture and two data word accesses per clock cycle. The 536,870,912-bit memory array is internally organized as four banks of 128Mb to allow concurrent operations. The pipeline allows Read and Write burst accesses to be virtually continuous, with the option to concatenate or truncate the bursts. The programmable features of burst length, burst sequence and CAS latency enable further advantages. The device is available in 8-bit, 16-bit and 32-bit data word size Input data is registered on the I/O pins on both edges of Data Strobe signal(s), while output data is referenced to both edges of Data Strobe and both edges of CLK. Commands are registered on the positive edges of CLK.Learn More
IS43R32800D 8Mx32 256-Mbit DDR SDRAM
ISSI IS43R32800D 8Mx32 256-Mbit DDR SDRAM achieves high speed data transfer using pipeline architecture and two data word accesses per clock cycle. The 268,435,456-bit memory array is internally organized as four banks of 64Mb to allow concurrent operations. The pipeline allows Read and Write burst accesses to be virtually continuous, with the option to concatenate or truncate the bursts. The programmable features of burst length, burst sequence and CAS latency enable further advantages.
型號 製造商 描述 庫存 價格
IS43R16800E-5TLI
DISTI # IS43R16800E-5TLI-ND
Integrated Silicon Solution IncIC DRAM 128M PARALLEL 66TSOP II
RoHS: Compliant
Min Qty: 432
Container: Tray
Temporarily Out of Stock
  • 432:$2.4482
IS43R16800E-5TLI-TR
DISTI # IS43R16800E-5TLI-TR-ND
Integrated Silicon Solution IncIC DRAM 128M PARALLEL 66TSOP II
RoHS: Compliant
Min Qty: 1500
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 1500:$2.2716
IS43R16800E-5TLI
DISTI # IS43R16800E-5TLI
Integrated Silicon Solution IncDRAM Chip DDR SDRAM 128M-Bit 8Mx16 2.5V 66-Pin TSOP-II (Alt: IS43R16800E-5TLI)
RoHS: Compliant
Min Qty: 1
Europe - 956
  • 1:€2.7900
  • 10:€2.7900
  • 25:€2.7900
  • 50:€2.7900
  • 100:€2.7900
  • 500:€2.7900
  • 1000:€2.7900
IS43R16800E-5TLI
DISTI # IS43R16800E-5TLI
Integrated Silicon Solution IncDRAM Chip DDR SDRAM 128M-Bit 8Mx16 2.5V 66-Pin TSOP-II - Tape and Reel (Alt: IS43R16800E-5TLI)
RoHS: Compliant
Min Qty: 432
Container: Reel
Americas - 0
  • 432:$2.0900
  • 648:$1.9900
  • 1080:$1.8900
  • 2160:$1.7900
  • 4320:$1.7900
IS43R16800E-5TLI-TR
DISTI # IS43R16800E-5TLI-TR
Integrated Silicon Solution IncDRAM Chip DDR SDRAM 128M-Bit 8M x 16 2.5V 66-Pin TSOP-II T/R - Tape and Reel (Alt: IS43R16800E-5TLI-TR)
RoHS: Compliant
Min Qty: 1500
Container: Reel
Americas - 0
  • 1500:$2.0900
  • 3000:$1.9900
  • 6000:$1.8900
  • 9000:$1.7900
  • 15000:$1.7900
IS43R16800E-5TLI
DISTI # 870-IS43R16800E5TLTR
Integrated Silicon Solution IncDRAM 128M (8Mx16) 200MHz 2.5v DDR SDRAM
RoHS: Compliant
64
  • 1:$3.0900
  • 10:$2.8000
  • 25:$2.7300
  • 100:$2.4400
  • 250:$2.4300
IS43R16800E-5TLI-TR
DISTI # 870-IS43R168006TLITR
Integrated Silicon Solution IncDRAM 128M (8Mx16) 200MHz DDR 2.5v
RoHS: Compliant
0
  • 1500:$2.1300
圖片 型號 描述
IS43R16800E-6TL-TR

Mfr.#: IS43R16800E-6TL-TR

OMO.#: OMO-IS43R16800E-6TL-TR

DRAM 128M (8Mx16) 166MHz DDR 2.5v
IS43R16800E-6TLI-TR

Mfr.#: IS43R16800E-6TLI-TR

OMO.#: OMO-IS43R16800E-6TLI-TR

DRAM 128M (8Mx16) 166MHz DDR 2.5v
IS43R16800E-5TL

Mfr.#: IS43R16800E-5TL

OMO.#: OMO-IS43R16800E-5TL

DRAM 128M (8Mx16) 200MHz 2.5v DDR SDRAM
IS43R16800E-5TL-TR

Mfr.#: IS43R16800E-5TL-TR

OMO.#: OMO-IS43R16800E-5TL-TR

DRAM 128M (8Mx16) 200MHz DDR 2.5v
IS43R16800A-5TL-TR

Mfr.#: IS43R16800A-5TL-TR

OMO.#: OMO-IS43R16800A-5TL-TR

DRAM 128M 2.5v 8Mx16 400MHz
IS43R16800E-6TLI-TR

Mfr.#: IS43R16800E-6TLI-TR

OMO.#: OMO-IS43R16800E-6TLI-TR-INTEGRATED-SILICON-SOLUTION

DRAM 128M (8Mx16) 166MHz DDR 2.5v
IS43R16800E-6TL-TR

Mfr.#: IS43R16800E-6TL-TR

OMO.#: OMO-IS43R16800E-6TL-TR-INTEGRATED-SILICON-SOLUTION

DRAM 128M (8Mx16) 166MHz DDR 2.5v
IS43R16800E-5TLI

Mfr.#: IS43R16800E-5TLI

OMO.#: OMO-IS43R16800E-5TLI-INTEGRATED-SILICON-SOLUTION

DRAM 128M (8Mx16) 200MHz 2.5v DDR SDRAM
IS43R16800E-6TL

Mfr.#: IS43R16800E-6TL

OMO.#: OMO-IS43R16800E-6TL-INTEGRATED-SILICON-SOLUTION

DRAM 128M (8Mx16) 166MHz 2.5v DDR SDRAM
IS43R16800CC-5TL

Mfr.#: IS43R16800CC-5TL

OMO.#: OMO-IS43R16800CC-5TL-230

DRAM 128M (8Mx16) 200MHz DDR 2.5v
可用性
庫存:
Available
訂購:
4000
輸入數量:
IS43R16800E-5TLI的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
1
US$2.68
US$2.68
10
US$2.55
US$25.51
100
US$2.42
US$241.65
500
US$2.28
US$1 141.15
1000
US$2.15
US$2 148.00
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