FZ3600R17KE3B2NOSA1

Mfr. #:: FZ3600R17KE3B2NOSA1
製造商:: Infineon Technologies
描述:: IGBT MODULE 1700V 3600A
生命週期:: 製造商新產品
數據表:: FZ3600R17KE3B2NOSA1 數據表
交貨:: DHL FedEx Ups TNT EMS
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ECAD Model:

產品屬性
屬性值

Tags: FZ3600R17K, FZ3600R17, FZ36, FZ3

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FZ3600R17KE3B2NOSA1 描述

***et Europe: Trans IGBT Module N-CH 1.7KV 4.8KA 9-Pin IHM190

***el Electronic: Cap Ceramic 180pF 50V X7R 10% Pad SMD 0201 125C T/R

***ineon: 1700V IHM 190mm single switch IGBT Module with IGBT3, enlarged diode and AlSiC base-plate - The best solution for your traction and industry applications | Summary of Features: High reliability and robust module construction; Enlarged Diode for regenerative operation | Benefits: High power density for compact inverter designs; Standardized housing | Target Applications: drives; wind; traction; cav

***p One Stop: Trans IGBT Module N-CH 1200V 900A 5100000mW 10-Pin PRIME2-1 Tray

***ark: IGBT Module; Continuous Collector Current:900A; Collector Emitter Saturation Voltage:2.05V; Power Dissipation:5.1kW; Operating Temperature Max:150°C; IGBT Termination:Tab; Collector Emitter Voltage Max:1.2kV; Product Range:-

***ineon: 1200V PrimePACK 2 dual IGBT module with Trench/Fieldstop IGBT4, Emitter Controlled 4 diode and NTC. | Summary of Features: Extended Operation Temperature T(tvj op); High DC Stability; High Short Circuit Capability, Self Limiting Short Circuit Current; Low Switching Losses; Unbeatable Robustness; V(cesat) with positive Temperature Coefficient; 4kV AC 1min Insulation; Package with CTI > 400; High Creepage and Clearance Distances; High Power and Thermal Cycling Capability; Substrate for Low Thermal Resistance; UL recognized | Benefits: High Power Density; Standardized housing | Target Applications: drives; wind; solar; cav; ups; traction

*** Electronics: IGBT Array & Module Transistor, N Channel, 440 A, 1.7 V, 1.45 kW, 1.2 kV, Module

***ow.cn: Trans IGBT Module N-CH 1200V 440A 1450000mW Automotive 7-Pin 62MM-1 Tray

***ment14 APAC: IGBT MODULE, DUAL, 1200V; Module Configuration:Dual; DC Collector Current:440A; Collector Emitter Voltage Vces:2.15V; Power Dissipation Pd:1.45kW; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +125°C; Transistor Case Style:Econopack 3; No. of Pins:7; SVHC:No SVHC (19-Dec-2011); Alternate Case Style:M62a; Current Ic Continuous a Max:300A; Current Temperature:80°C; Fall Time tf:0.13µs; Package / Case:Econopack 3; Power Dissipation Max:1.45kW; Power Dissipation Pd:1.45kW; Power Dissipation Pd:1.45kW; Pulsed Current Icm:600A; Rise Time:0.09µs; Termination Type:Screw; Voltage Vces:1.2kV

***ineon: Our well-known 62 mm 1200V dual IGBT modules with trench/fieldstop IGBT3 and Emitter Controlled High Efficiency Diode are the right choice for your design. | Summary of Features: Superior solution for frequency controlled inverter drives; UL/CSA Certification with UL1557 E83336; Operating temperature up to 125 C (max 150 C); Optimized switching characteristic like softness and reduced switching losses; Existing packages with higher current capability; RoHS compliant | Benefits: PrimeSTACKs available for fast development with minimum effort; Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; cav; ups; induction-heating; welding

***ical: Trans IGBT Module N-CH 600V 37A 115000mW 23-Pin EASY1B-1 Tray

***ark: Igbt Module; Transistor Polarity:n Channel; Dc Collector Current:30A; Collector Emitter Saturation Voltage Vce(On):600V; Power Dissipation Pd:115W; Collector Emitter Voltage V(Br)Ceo:600V; No. Of Pins:23Pins; Product Range:- Rohs Compliant: Yes

***ineon: EasyPIM 1B 600V PIM IGBT module with Trench/Fieldstop IGBT3, Emitter Controlled 3 diode and NTC | Summary of Features: Low Switching Losses; Trench IGBT 3; V(CEsat) with positive Temperature Coefficient; Low V(CEsat); Al(2)O(3) Substrate with Low Thermal Resistance; Compact Design; Solder Contact Technology; Rugged mounting due to integrated mounting clamps | Benefits: Compact module concept; Optimized customers development cycle time and cost; Configuration flexibility | Target Applications: drives; aircon

***ical: Trans IGBT Chip N-CH 600V 100A 260000mW 4-Pin ISOTOP Tube

***ure Electronics: STGE50NC60WD Series 600 V 50 A Very Fast IGBT - ISOTOP

*** Electronics: STMICROELECTRONICS STGE50NC60WD IGBT Single Transistor, 100 A, 2.5 V, 260 W, 600 V, ISOTOP, 4 Pins

***r Electronics: Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel

***i-Key: IGBT UFAST N-CH 100A 600V ISOTOP

***ment14 APAC: IGBT, N 600V 50A ISOTOP; DC Collector Current:100A; Emitter Saturation Voltage Vce(on):2.5V; Power Dissipation Pd:260W;

*** Electronic Components: IGBT Transistors N-Ch 600volt 50 Amp

***or: IGBT MOD 600V 100A 260W ISOTOP

***(Formerly Allied Electronics): STMicroelectronics, ST72F60E1M1

***nell: IGBT, N 600V 50A ISOTOP; DC Collector Current: 100A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 260W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: ISOTOP; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Current Ic Continuous a Max: 50A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Max: 260W; Pulsed Current Icm: 250A; Rise Time: 17ns; Termination Type: Surface Mount Device; Transistor Polarity: N Channel; Transistor Type: IGBT; Voltage Vces: 600V

***ure Electronics: APTGT600x Series 600 V 100 A Trench + Field Stop IGBT3 Power Module - SP1

***ical: Trans IGBT Module N-CH 600V 100A 250000mW 12-Pin Case SP-1 Tube

*** Stop Electro: Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel

***rochip SCT: High Voltage Power Module, Phase leg, 600V, RoHS

***ark: PM-IGBT-TFS-SP1 SP1 Tube RoHS Compliant: Yes

***i-Key: IGBT PHASE LEG TRENCH 600V SP1

***el Electronic: IGBT MODULE 600V 100A 250W SP1

Market price

型號	製造商	描述	庫存	價格
FZ3600R17KE3B2NOSA1 DISTI # FZ3600R17KE3B2NOSA1-ND	Infineon Technologies AG	IGBT MODULE 1700V 3600A RoHS: Compliant Min Qty: 1 Container: Tray	Limited Supply - Call
FZ3600R17KE3B2NOSA1 DISTI # FZ3600R17KE3B2NOSA1	Infineon Technologies AG	IGBT MODULE 1700V 3600A - Trays (Alt: FZ3600R17KE3B2NOSA1) RoHS: Not Compliant Min Qty: 1 Container: Tray	Americas - 0
FZ3600R17KE3B2NOSA1 DISTI # SP000091889	Infineon Technologies AG	IGBT MODULE 1700V 3600A (Alt: SP000091889) RoHS: Not Compliant Min Qty: 1	Europe - 0	1:€1,689.0000
FZ3600R17KE3_B2 DISTI # 641-FZ3600R17KE3_B2	Infineon Technologies AG	IGBT Modules IGBT-MODULES	0

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