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SI2329DS-T1-GE3

SI2329DS-T1-GE3
Mfr. #:
SI2329DS-T1-GE3
製造商:
Vishay / Siliconix
描述:
MOSFET -8V Vds 5V Vgs SOT-23
生命週期:
製造商新產品
數據表:
SI2329DS-T1-GE3 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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HTML Datasheet:
SI2329DS-T1-GE3 DatasheetSI2329DS-T1-GE3 Datasheet (P4-P6)SI2329DS-T1-GE3 Datasheet (P7-P9)SI2329DS-T1-GE3 Datasheet (P10)
ECAD Model:
更多信息:
SI2329DS-T1-GE3 更多信息
產品屬性
屬性值
製造商：
威世
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
SOT-23-3
通道數：
1 Channel
晶體管極性：
P-通道
Vds - 漏源擊穿電壓：
8 V
Id - 連續漏極電流：
6 A
Rds On - 漏源電阻：
30 mOhms
Vgs th - 柵源閾值電壓：
350 mV
Vgs - 柵源電壓：
4.5 V
Qg - 門電荷：
19.3 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
2.5 W
配置：
單身的
頻道模式：
增強
商品名：
溝槽場效應晶體管
打包：
捲軸
系列：
SI2
晶體管類型：
1 P-Channel
品牌：
威世 / Siliconix
正向跨導 - 最小值：
2 S
秋季時間：
20 ns
產品類別：
MOSFET
上升時間：
22 ns
出廠包裝數量：
3000
子類別：
MOSFET
典型關斷延遲時間：
46 ns
典型的開啟延遲時間：
20 ns
單位重量：
0.000282 oz
Tags
SI232, SI23, SI2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ler Electronic
VISHAY SI2329DS-T1-GE3 MOSFET Transistor, P Channel, -6 A, -8 V, 0.025 ohm, -4.5 V, -350 mV
***ure Electronics
Si2329DS Series 8 V 5.3 A 0.03 Ohm SMT P-Channel MOSFET - SOT-23-3
***ied Electronics & Automation
SI2329DS-T1-GE3 P-channel MOSFET Transistor; 6 A; 8 V; 3-Pin TO-236
***enic
8V 6A 2.5W 30m´Î@4.5V5.3A 800mV@250Ã×A P Channel SOT-23(SOT-23-3) MOSFETs ROHS
***nell
MOSFET, P-CH, 8V, 6A, SOT23; Transistor Polarity:P Channel; Continuous Drain Current Id:-6A; Drain Source Voltage Vds:-8V; On Resistance Rds(on):0.025ohm; Rds(on) Test Voltage Vgs:-4.5V; Power Dissipation Pd:2.5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-23; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V
SI2 Series TrenchFET® Power MOSFETs
Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.
型號 製造商 描述 庫存 價格
SI2329DS-T1-GE3
DISTI # V72:2272_07433101		Vishay IntertechnologiesTrans MOSFET P-CH 8V 5.3A 3-Pin SOT-23 T/R
RoHS: Compliant		111
  • 100:$0.4330
  • 25:$0.5115
  • 10:$0.6251
  • 1:$0.7690
SI2329DS-T1-GE3
DISTI # V36:1790_07433101		Vishay IntertechnologiesTrans MOSFET P-CH 8V 5.3A 3-Pin SOT-23 T/R
RoHS: Compliant		0
  • 3000000:$0.2454
  • 1500000:$0.2456
  • 300000:$0.2560
  • 30000:$0.2716
  • 3000:$0.2741
SI2329DS-T1-GE3
DISTI # SI2329DS-T1-GE3CT-ND		Vishay SiliconixMOSFET P-CH 8V 6A SOT-23
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		9053In Stock
  • 1000:$0.2596
  • 500:$0.3245
  • 100:$0.4104
  • 10:$0.5350
  • 1:$0.6100
SI2329DS-T1-GE3
DISTI # SI2329DS-T1-GE3DKR-ND		Vishay SiliconixMOSFET P-CH 8V 6A SOT-23
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		9053In Stock
  • 1000:$0.2596
  • 500:$0.3245
  • 100:$0.4104
  • 10:$0.5350
  • 1:$0.6100
SI2329DS-T1-GE3
DISTI # SI2329DS-T1-GE3TR-ND		Vishay SiliconixMOSFET P-CH 8V 6A SOT-23
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		9000In Stock
  • 30000:$0.1995
  • 15000:$0.2047
  • 6000:$0.2126
  • 3000:$0.2284
SI2329DS-T1-GE3
DISTI # 32435712		Vishay IntertechnologiesTrans MOSFET P-CH 8V 5.3A 3-Pin SOT-23 T/R
RoHS: Compliant		111
  • 31:$0.7690
SI2329DS-T1-GE3
DISTI # SI2329DS-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 8V 5.3A 3-Pin SOT-23 T/R (Alt: SI2329DS-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 15000
  • 150000:$0.2723
  • 75000:$0.2769
  • 30000:$0.2817
  • 15000:$0.2918
  • 9000:$0.3026
  • 6000:$0.3142
  • 3000:$0.3268
SI2329DS-T1-GE3
DISTI # SI2329DS-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 8V 5.3A 3-Pin SOT-23 T/R (Alt: SI2329DS-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 30000:€0.1899
  • 18000:€0.2049
  • 12000:€0.2219
  • 6000:€0.2579
  • 3000:€0.3779
SI2329DS-T1-GE3
DISTI # SI2329DS-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 8V 5.3A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2329DS-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
    SI2329DS-T1-GE3
    DISTI # 63W4143    		Vishay IntertechnologiesMOSFET Transistor, P Channel, -6 A, -8 V, 0.025 ohm, -4.5 V, -350 mV RoHS Compliant: Yes32256
    • 1000:$0.2850
    • 500:$0.3350
    • 100:$0.3960
    • 50:$0.4320
    • 25:$0.4690
    • 10:$0.5050
    • 1:$0.6210
    SI2329DS-T1-GE3
    DISTI # 70616155    		Vishay SiliconixSI2329DS-T1-GE3 P-channel MOSFET Transistor,6 A,8 V,3-Pin TO-236
    RoHS: Compliant    		0
    • 300:$0.4900
    • 600:$0.4800
    • 1500:$0.4700
    • 3000:$0.4500
    • 7500:$0.4200
    SI2329DS-T1-GE3
    DISTI # 78-SI2329DS-T1-GE3    		Vishay IntertechnologiesMOSFET -8V Vds 5V Vgs SOT-23
    RoHS: Compliant    		20267
    • 1:$0.5900
    • 10:$0.4780
    • 100:$0.3630
    • 500:$0.3000
    • 1000:$0.2400
    • 3000:$0.2170
    • 6000:$0.2020
    • 9000:$0.1950
    SI2329DS-T1-GE3
    DISTI # 8123114P    		Vishay IntertechnologiesTRANS MOSFET P-CH 8V 5.3A 3-PIN, RL7800
    • 3000:£0.2160
    • 1500:£0.2190
    • 600:£0.2500
    • 300:£0.3020
    SI2329DS-T1-GE3Vishay Intertechnologies 2934
      SI2329DS-T1-GE3
      DISTI # 2283643      		Vishay IntertechnologiesMOSFET, P-CH, 8V, 6A, SOT23
      RoHS: Compliant      		31934
      • 500:$0.4520
      • 100:$0.5490
      • 10:$0.7220
      • 1:$0.9040
      SI2329DS-T1-GE3
      DISTI # 2283643      		Vishay IntertechnologiesMOSFET, P-CH, 8V, 6A, SOT2331531
      • 500:£0.2340
      • 250:£0.2590
      • 100:£0.2840
      • 10:£0.4150
      • 1:£0.5340
      SI2329DS-T1-GE3Vishay IntertechnologiesMOSFET -8V Vds 5V Vgs SOT-23
      RoHS: Compliant      		Americas -
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        可用性
        庫存:
        20
        訂購:
        2003
        輸入數量:
        SI2329DS-T1-GE3的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
        參考價格（美元）
        數量
        單價
        小計金額
        1
        US$0.59
        US$0.59
        10
        US$0.48
        US$4.78
        100
        US$0.36
        US$36.30
        500
        US$0.30
        US$150.00
        1000
        US$0.24
        US$240.00
        由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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