FQD2N60CTM_WS

Mfr. #:: FQD2N60CTM_WS
製造商:: Fairchild Semiconductor
描述:: IGBT Transistors MOSFET 600V 1.9A NCH MOSFET
生命週期:: 製造商新產品
數據表:: FQD2N60CTM_WS 數據表
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產品屬性
屬性值

製造商: 仙童半導體

產品分類: 晶體管 - FET、MOSFET - 單

打包: 捲軸

單位重量: 0.139332 oz

安裝方式: 貼片/貼片

包裝盒: TO-252-3

技術: 矽

通道數: 1 Channel

配置: 單身的

晶體管型: 1 N-Channel

VGS-柵極-源極-電壓: 30 V

Id 連續漏極電流: 1.9 A

Vds-漏-源-擊穿電壓: 600 V

Rds-On-Drain-Source-Resistance: 4.7 Ohms

晶體管極性: N通道

Tags: FQD2N60CTM, FQD2N60CT, FQD2N60C, FQD2N60, FQD2N6, FQD2N, FQD2, FQD

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FQD2N60CTM_WS 描述

***emi: N-Channel Power MOSFET, QFET®, 600 V, 1.9 A, 4.7 Ω, DPAK

***r Electronics: Power Field-Effect Transistor, 1.9A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

***i-Key: MOSFET N-CH 600V 2.4A DPAK

***nsix Microsemi: Power Field-Effect Transistor, 2.4A I(D), 600V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***ser: MOSFETs 600V N-Channel QFET

***el Nordic: Contact for details

***inecomponents.com: Trans MOSFET N-CH 600V 2A 3-Pin (2+Tab) TO-252 T/R

***i-Key: MOSFET N-CH 600V 2A DPAK

***ser: MOSFETs & MOSFETs RF .

*** Source Electronics: MOSFET N-CH 600V 1.7A TO252-3 / Trans MOSFET N-CH 650V 1.7A Automotive 3-Pin(2+Tab) DPAK T/R

***ineon SCT: CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO252-3, RoHS

***nell: MOSFET, N CH, 650V, 1.7A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.7A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 2.97ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; P

***ineon: CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting

***ineon SCT: Single N-Channel 600 V 2.1 Ohm 6.7 nC CoolMOS Power Mosfet - TO-252-3, PG-TO252-3, RoHS

***ark: Mosfet, N-Ch, 600V, 3.7A, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:3.7A; Drain Source Voltage Vds:600V; On Resistance Rds(On):1.8Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipationrohs Compliant: Yes

***ineon: Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV

***ical: Trans MOSFET N-CH 650V 2.4A 3-Pin(2+Tab) TO-252 T/R

*** Stop Electro: Power Field-Effect Transistor, 2.4A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***ineon SCT: CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO252-3, RoHS

***nell: MOSFET, N-CH, 600V, 2.4A, TO252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.4A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 1.8ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Pow

***ineon: CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting

***i-Key: MOSFET N-CH 500V 1.6A DPAK

***ser: MOSFETs 500V N-Channel QFET

***ark: MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:1.6A; On-Resistance, Rds(on):5.3ohm; Package/Case:2-TO-252; Leaded Process Compatible:No; Mounting Type:Through Hole; Peak Reflow Compatible (260 C):No RoHS Compliant: No

Market price

型號	製造商	描述	庫存	價格
FQD2N60CTM-WS DISTI # FQD2N60CTM-WSCT-ND	ON Semiconductor	MOSFET N-CH 600V 1.9A RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
FQD2N60CTM-WS DISTI # FQD2N60CTM-WSDKR-ND	ON Semiconductor	MOSFET N-CH 600V 1.9A RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
FQD2N60CTM-WS DISTI # FQD2N60CTM-WSTR-ND	ON Semiconductor	MOSFET N-CH 600V 1.9A RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Temporarily Out of Stock	2500:$0.4304
FQD2N60CTM_WS DISTI # FQD2N60CTM-WS	ON Semiconductor	MOS Power Transistors HV (>= 200V) - Tape and Reel (Alt: FQD2N60CTM-WS) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.3469 5000:$0.3449 10000:$0.3399 15000:$0.3359 25000:$0.3279
FQD2N60CTM_WS DISTI # FQD2N60CTM-WS	ON Semiconductor	MOS Power Transistors HV (>= 200V) (Alt: FQD2N60CTM-WS) RoHS: Compliant Min Qty: 2500	Europe - 0	2500:€0.6399 5000:€0.4979 10000:€0.4129 15000:€0.3479 25000:€0.3229
FQD2N60CTM-WS DISTI # 48AC1176	ON Semiconductor	QFC 600V 4.7OHM DPAK / REEL	0	1:$0.5590
FQD2N60CTM-WS DISTI # 512-FQD2N60CTM_WS	ON Semiconductor	MOSFET 600V 1.9A NCH MOSFET RoHS: Compliant	2747	1:$0.9200 10:$0.7830 100:$0.6010 500:$0.5320 1000:$0.4200 2500:$0.3720 10000:$0.3580
FQD2N60CTM_WS DISTI # XSKDRABV0044784	ON SEMICONDUCTOR	RoHS: Compliant	7500 in Stock0 on Order	7500:$0.4573 2500:$0.4900

相關產品

圖片	型號	描述
	Mfr.#: FQD2N60CTM-WS OMO.#: OMO-FQD2N60CTM-WS	MOSFET 600V 1.9A NCH MOSFET
	Mfr.#: FQD2N60CTM OMO.#: OMO-FQD2N60CTM	MOSFET N-CH/600V/2A/A.QFET
	Mfr.#: FQD2N60A OMO.#: OMO-FQD2N60A-1190	全新原裝
	Mfr.#: FQD2N60C OMO.#: OMO-FQD2N60C-1190	全新原裝
	Mfr.#: FQD2N60C FQD2N60 2N60D OMO.#: OMO-FQD2N60C-FQD2N60-2N60D-1190	全新原裝
	Mfr.#: FQD2N60C TM-(FAIRCHILD) OMO.#: OMO-FQD2N60C-TM--FAIRCHILD--1190	全新原裝
	Mfr.#: FQD2N60CTF_F080 OMO.#: OMO-FQD2N60CTF-F080-ON-SEMICONDUCTOR	MOSFET N-CH 600V 1.9A DPAK
	Mfr.#: FQD2N60CTM-NL OMO.#: OMO-FQD2N60CTM-NL-1190	全新原裝
	Mfr.#: FQD2N60CTM/FQD5N60C OMO.#: OMO-FQD2N60CTM-FQD5N60C-1190	全新原裝
	Mfr.#: FQD2N60TM OMO.#: OMO-FQD2N60TM-ON-SEMICONDUCTOR	MOSFET N-CH 600V 2A DPAK

可用性

庫存:: Available
訂購:: 4500
輸入數量:

FQD2N60CTM_WS的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]

參考價格（美元）

數量
單價
小計金額

1: ~~US$0.43~~; ~~US$0.43~~

10: ~~US$0.40~~; ~~US$4.05~~

100: ~~US$0.38~~; ~~US$38.33~~

500: ~~US$0.36~~; ~~US$181.00~~

1000: ~~US$0.34~~; ~~US$340.70~~

從...開始

FQD2N60CTM 8
FQD2N60CT 11
FQD2N60C 17
FQD2N60 23
FQD2N6 25
FQD2N 61
FQD2 88
FQD 600

FQD2N60CTM_WS

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes