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SIHB22N60E-GE3

SIHB22N60E-GE3
Mfr. #:
SIHB22N60E-GE3
製造商:
Vishay / Siliconix
描述:
MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
生命週期:
製造商新產品
數據表:
SIHB22N60E-GE3 數據表
交貨:
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支付:
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HTML Datasheet:
SIHB22N60E-GE3 DatasheetSIHB22N60E-GE3 Datasheet (P4-P6)SIHB22N60E-GE3 Datasheet (P7-P9)
ECAD Model:
更多信息:
SIHB22N60E-GE3 更多信息
產品屬性
屬性值
製造商：
威世
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
TO-263-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
650 V
Id - 連續漏極電流：
21 A
Rds On - 漏源電阻：
180 mOhms
Vgs th - 柵源閾值電壓：
4 V
Vgs - 柵源電壓：
30 V
Qg - 門電荷：
57 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
227 W
配置：
單身的
打包：
管子
系列：
E
品牌：
威世 / Siliconix
產品類別：
MOSFET
出廠包裝數量：
1000
子類別：
MOSFET
單位重量：
0.050717 oz
Tags
SIHB22N60E, SIHB22N60, SIHB22, SIHB2, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
型號 製造商 描述 庫存 價格
SIHB22N60E-GE3
DISTI # V99:2348_09219018		Vishay IntertechnologiesTrans MOSFET N-CH 600V 21A 3-Pin(2+Tab) D2PAK
RoHS: Compliant		718
  • 1000:$2.1720
  • 500:$2.3769
  • 250:$2.6410
  • 100:$2.7990
  • 10:$3.4110
  • 1:$4.4978
SIHB22N60E-GE3
DISTI # V36:1790_09219018		Vishay IntertechnologiesTrans MOSFET N-CH 600V 21A 3-Pin(2+Tab) D2PAK
RoHS: Compliant		0
  • 1000000:$2.0180
  • 500000:$2.0220
  • 100000:$2.6020
  • 10000:$3.7670
  • 1000:$3.9700
SIHB22N60E-GE3
DISTI # SIHB22N60E-GE3-ND		Vishay SiliconixMOSFET N-CH 600V 21A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Tube		6945In Stock
  • 5000:$1.9891
  • 3000:$2.0668
  • 1000:$2.1756
  • 100:$3.0303
  • 25:$3.4964
  • 10:$3.6990
  • 1:$4.1200
SIHB22N60E-GE3
DISTI # 31314797		Vishay IntertechnologiesTrans MOSFET N-CH 600V 21A 3-Pin(2+Tab) D2PAK
RoHS: Compliant		718
  • 4:$4.4978
SIHB22N60E-GE3
DISTI # SIHB22N60E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 21A 3-Pin(2+Tab) D2PAK (Alt: SIHB22N60E-GE3)
RoHS: Compliant
Min Qty: 1		Europe - 1000
  • 1000:€1.4900
  • 50:€1.5900
  • 100:€1.5900
  • 500:€1.5900
  • 25:€1.7900
  • 10:€2.1900
  • 1:€2.8900
SIHB22N60E-GE3
DISTI # SIHB22N60E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 21A 3-Pin(2+Tab) D2PAK - Rail/Tube (Alt: SIHB22N60E-GE3)
RoHS: Not Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 6000:$1.7900
  • 10000:$1.7900
  • 2000:$1.8900
  • 4000:$1.8900
  • 1000:$1.9900
SIHB22N60E-GE3
DISTI # 83T7333		Vishay IntertechnologiesMOSFET, N CH, 600V, 21A, D2PAK,Transistor Polarity:N Channel,Continuous Drain Current Id:21A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.15ohm,Rds(on) Test Voltage Vgs:10V,Power Dissipation Pd:227W,No. of Pins:3 RoHS Compliant: Yes939
  • 2500:$2.2000
  • 1000:$2.3000
  • 500:$2.6700
  • 100:$3.0200
  • 50:$3.2100
  • 25:$3.4200
  • 10:$3.6100
  • 1:$4.2900
SIHB22N60E-E3
DISTI # 781-SIHB22N60E-E3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant		2025
  • 1:$4.1400
  • 10:$3.4300
  • 100:$2.8200
  • 250:$2.7300
  • 500:$2.4500
  • 1000:$2.0700
  • 2000:$1.9600
SIHB22N60E-GE3
DISTI # 781-SIHB22N60E-GE3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant		2740
  • 1:$4.1400
  • 10:$3.4300
  • 100:$2.8200
  • 250:$2.7300
  • 500:$2.4500
  • 1000:$2.0700
  • 2000:$1.9600
SIHB22N60E-GE3
DISTI # 7689313P		Vishay IntertechnologiesMOSFET N-CHANNEL 600V 21A D2PAK, TU1653
  • 200:£1.8100
  • 100:£1.8500
  • 50:£1.9200
  • 10:£2.0900
SIHB22N60EGE3Vishay SiliconixPower Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Compliant		250
    SIHB22N60E-GE3
    DISTI # TMOSP10774    		Vishay IntertechnologiesMOSFET650V 180mOhm21A TO263
    RoHS: Compliant    		Stock DE - 0Stock HK - 0Stock US - 0
    • 1000:$1.9200
    SIHB22N60E-GE3
    DISTI # XSKDRABV0051360    		Vishay Intertechnologies 
    RoHS: Compliant    		800 in Stock0 on Order
    • 800:$2.4400
    • 250:$2.6200
    SIHB22N60E-GE3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
    RoHS: Compliant    		Americas - 46200
    • 50:$2.6850
    • 100:$2.4360
    • 250:$2.2160
    • 500:$2.1440
    • 1000:$1.9360
    SIHB22N60E-GE3
    DISTI # 2079772    		Vishay IntertechnologiesMOSFET, N CH, 600V, 21A, D2PAK3987
    • 500:£2.1000
    • 250:£2.5400
    • 100:£2.6000
    • 10:£3.1700
    • 1:£3.9700
    SIHB22N60E-GE3
    DISTI # 2079772    		Vishay IntertechnologiesMOSFET, N CH, 600V, 21A, D2PAK
    RoHS: Compliant    		1939
    • 3000:$3.1300
    • 1000:$3.2800
    • 100:$4.5700
    • 25:$5.2700
    • 10:$5.5800
    • 1:$6.2100
    圖片 型號 描述
    AD5623RBRMZ-5

    Mfr.#: AD5623RBRMZ-5

    OMO.#: OMO-AD5623RBRMZ-5

    		 Digital to Analog Converters - DAC IC 12-Bit w/ 5 ppm/oC On-Chip Ref
    SRDA05-4.TBT

    Mfr.#: SRDA05-4.TBT

    OMO.#: OMO-SRDA05-4-TBT

    		 TVS Diodes / ESD Suppressors TVS ARRAY 8-PIN SOIC
    SN74LVC1G14DPWR

    Mfr.#: SN74LVC1G14DPWR

    OMO.#: OMO-SN74LVC1G14DPWR

    		 Inverters SinglSchmitt-Trigger Inverter -40 to 85
    MM031C103KCZ2A

    Mfr.#: MM031C103KCZ2A

    OMO.#: OMO-MM031C103KCZ2A

    		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 100v 0.01uF X7R 0603 10% Tol
    AD5623RBRMZ-5

    Mfr.#: AD5623RBRMZ-5

    OMO.#: OMO-AD5623RBRMZ-5-ANALOG-DEVICES-INC-ADI

    		 Digital to Analog Converters - DAC IC 12-Bit w/ 5 ppm/oC On-Chip Ref
    LPS6225-335MRB

    Mfr.#: LPS6225-335MRB

    OMO.#: OMO-LPS6225-335MRB-1190

    		 Fixed Inductors LPS6225 Low Profile 3300uH 0.11A 20%SMD
    LPS6225-335MRC

    Mfr.#: LPS6225-335MRC

    OMO.#: OMO-LPS6225-335MRC-1190

    		 Fixed Inductors LPS6225 Low Profile 3300uH 0.11A 20%SMD
    C3216X7R1H225K160AE

    Mfr.#: C3216X7R1H225K160AE

    OMO.#: OMO-C3216X7R1H225K160AE-TDK

    		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 1206 50V 2.2uF X7R Boardflex Sensitive
    MM031C103KCZ2A

    Mfr.#: MM031C103KCZ2A

    OMO.#: OMO-MM031C103KCZ2A-AVX

    		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 100v 0.01uF X7R 0603 10% Tol
    SRDA05-4.TBT

    Mfr.#: SRDA05-4.TBT

    OMO.#: OMO-SRDA05-4-TBT-SEMTECH

    		 TVS DIODE 5V 20V 8SO
    可用性
    庫存:
    Available
    訂購:
    1985
    輸入數量:
    SIHB22N60E-GE3的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格（美元）
    數量
    單價
    小計金額
    1
    US$4.14
    US$4.14
    10
    US$3.43
    US$34.30
    100
    US$2.82
    US$282.00
    250
    US$2.73
    US$682.50
    500
    US$2.45
    US$1 225.00
    1000
    US$2.07
    US$2 070.00
    2000
    US$1.96
    US$3 920.00
    5000
    US$1.89
    US$9 450.00
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