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FQP15P12

FQP15P12
Mfr. #:
FQP15P12
製造商:
ON Semiconductor / Fairchild
描述:
MOSFET 120V P-Channel QFET
生命週期:
製造商新產品
數據表:
FQP15P12 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
產品屬性
屬性值
製造商：
安森美半導體
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
通孔
包裝/案例：
TO-220-3
通道數：
1 Channel
晶體管極性：
P-通道
Vds - 漏源擊穿電壓：
120 V
Id - 連續漏極電流：
15 A
Rds On - 漏源電阻：
200 mOhms
Vgs - 柵源電壓：
30 V
最低工作溫度：
- 55 C
最高工作溫度：
+ 175 C
Pd - 功耗：
100 W
配置：
單身的
頻道模式：
增強
商品名：
場效應管
打包：
管子
高度：
16.3 mm
長度：
10.67 mm
系列：
FQP15P12
晶體管類型：
1 P-Channel
類型：
MOSFET
寬度：
4.7 mm
品牌：
安森美半導體/飛兆半導體
正向跨導 - 最小值：
9.5 S
秋季時間：
80 ns
產品類別：
MOSFET
上升時間：
100 ns
出廠包裝數量：
1000
子類別：
MOSFET
典型關斷延遲時間：
80 ns
典型的開啟延遲時間：
15 ns
第 # 部分別名：
FQP15P12_NL
單位重量：
0.063493 oz
Tags
FQP15, FQP1, FQP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Transistor,mosfet,p-Channel,120V V(Br)Dss,15A I(D),to-220Ab Rohs Compliant: Yes
***emi
P-Channel Power MOSFET, QFET®, -120 V, -15 A, 0.2 Ω, DPAK
***ical
Trans MOSFET P-CH 120V 15A 3-Pin(3+Tab) TO-220 Tube
***ure Electronics
Single P-Channel 120 V 0.2 Ohm 38 nC 100 W DMOS Flange Mount Mosfet - TO-220-3
***r Electronics
Power Field-Effect Transistor, 15A I(D), 120V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
***ark
Mosfet Transistor, N Channel, 7 A, 120 V, 160 Mohm, 10 V, 3 V Rohs Compliant: Yes
***icroelectronics
N-Channel 120V - 0.16Ohm - 14A - TO-220 LOOhm GATE CHARGE StripFET(TM) POWER MOSFET
***ical
Trans MOSFET N-CH 120V 14A 3-Pin(3+Tab) TO-220AB Tube
***ponent Stockers USA
14 A 120 V 0.18 ohm N-CHANNEL Si POWER MOSFET TO-220AB
***ment14 APAC
MOSFET, N CH, 120V, 14A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Source Voltage Vds:120V; On Resistance
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 14A I(D), 120V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N CH, 120V, 14A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 7A; Drain Source Voltage Vds: 120V; On Resistance Rds(on): 0.16ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 60W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Current Id Max: 14A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Termination Type: Through Hole; Transistor Type: Power MOSFET; Voltage Vds Typ: 120V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V
***i-Key
MOSFET N-CH 150V 14.4A TO-220
***el Electronic
IC REG LINEAR 5V 300MA 8HTSOP-J
***i-Key Marketplace
N-CHANNEL POWER MOSFET
***el Nordic
Contact for details
***et
Trans MOSFET N-CH 100V 19A 3-Pin(3+Tab) TO-220 Rail
***ser
MOSFETs 100V N-Ch QFET Logic Level
***el Nordic
Contact for details
***i-Key
MOSFET N-CH 120V 32A TO-220
***nell
MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 32A; Drain Source Voltage Vds: 120V; On Resistance Rds(on): 0.043ohm; Rds(on) Test Voltage Vgs: -; Threshold Voltage Vgs: -; Power Dissipation Pd:
***ark
MOSFET, N TO-220MOSFET, N TO-220; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:120V; Case style:TO-220; Current, Id cont:32A; Current, Idm pulse:128A; Power, Pd:150W; Resistance, Rds on:0.043R; Length / Height, RoHS Compliant: Yes
***icroelectronics
N-CHANNEL 100V 0.038 OHM 35A TO-220 LOW GATE CHARGE STripFET II MOSFET
*** Source Electronics
Trans MOSFET N-CH 100V 35A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 100V 35A TO-220
***ure Electronics
N-Channel 100 V 45 mOhm Flange Mount Power Mosfet - TO-220
***enic
100V 35A 45´Î@10V15A 115W 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
***nell
MOSFET, N TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 35A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.038ohm; Rds(on) Test Voltage Vgs: -; Threshold Voltage Vgs: -; Power Dissipation Pd: 1
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 35A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***icroelectronics
N-Channel 100V - 0.055Ohm - 26A - TO-220 LOOhm GATE CHARGE StripFET(TM) II POWER MOSFET
***eco
Transistor MOSFET Negative Channel 100 Volt 26A 3-Pin(3+Tab) TO-220 Tube
***ure Electronics
N-Channel 100 V 0.06 O 30 nC Flange Mount STripFET™ II Power MosFet - TO-220
***ponent Stockers USA
26 A 100 V 0.06 ohm N-CHANNEL Si POWER MOSFET TO-220AB
***(Formerly Allied Electronics)
MOSFET N-Ch 100V 26A UltraFET II TO220
***ment14 APAC
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:26A; Source Voltage Vds:100V; On Resistance Rds(on):0.055ohm;
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 26A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 26A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.055ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 85W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Current Id Max: 26A; Device Marking: STP24NF10; Operating Temperature Min: -55°C; Pulse Current Idm: 104A; Voltage Vds Typ: 100V
型號 製造商 描述 庫存 價格
FQP15P12
DISTI # 26637394		ON SemiconductorP-CH/120V/15A/QFET1000
  • 2000:$0.5965
  • 1000:$0.5992
FQP15P12
DISTI # FQP15P12-ND		ON SemiconductorMOSFET P-CH 120V 15A TO-220
RoHS: Compliant
Min Qty: 1000
Container: Tube		Temporarily Out of Stock
  • 1000:$0.7755
FQP15P12
DISTI # FQP15P12		ON SemiconductorTrans MOSFET P-CH 120V 15A 3-Pin TO-220 Tube (Alt: FQP15P12)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Asia - 0
    FQP15P12
    DISTI # FQP15P12    		ON SemiconductorTrans MOSFET P-CH 120V 15A 3-Pin(3+Tab) TO-220 Rail - Rail/Tube (Alt: FQP15P12)
    RoHS: Compliant
    Min Qty: 1000
    Container: Tube    		Americas - 0
    • 1000:$0.6139
    • 2000:$0.6099
    • 4000:$0.6019
    • 6000:$0.5939
    • 10000:$0.5799
    FQP15P12
    DISTI # 60J0862    		ON SemiconductorTRANSISTOR,MOSFET,P-CHANNEL,120V V(BR)DSS,15A I(D),TO-220AB ROHS COMPLIANT: YES0
    • 1:$1.6900
    • 10:$1.3200
    • 100:$1.0300
    • 1000:$0.7050
    • 2000:$0.7010
    • 10000:$0.6630
    • 24000:$0.6440
    • 50000:$0.6300
    FQP15P12Fairchild Semiconductor CorporationPower Field-Effect Transistor, 15A I(D), 120V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    RoHS: Compliant    		1779
    • 1000:$0.6800
    • 500:$0.7200
    • 100:$0.7500
    • 25:$0.7800
    • 1:$0.8400
    FQP15P12
    DISTI # 512-FQP15P12    		ON SemiconductorMOSFET 120V P-Channel QFET
    RoHS: Compliant    		557
    • 1:$1.5500
    • 10:$1.3200
    • 100:$1.0200
    • 500:$0.8940
    • 1000:$0.7050
    FQP15P12Fairchild Semiconductor Corporation15 A, 120 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB6
    • 4:$1.3500
    • 1:$1.8000
    圖片 型號 描述
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    Mfr.#: TLV61046ADBVR

    OMO.#: OMO-TLV61046ADBVR

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    08051C104KAT2A

    Mfr.#: 08051C104KAT2A

    OMO.#: OMO-08051C104KAT2A

    		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 100V .1uF X7R 0805 10%TOL
    NK103C1R5

    Mfr.#: NK103C1R5

    OMO.#: OMO-NK103C1R5

    		 NTC Thermistors Chip w SC wires 10K 25C
    SMA4F12A

    Mfr.#: SMA4F12A

    OMO.#: OMO-SMA4F12A-STMICROELECTRONICS

    		 400 W TVS IN SMA FLAT
    08051C104KAT2A

    Mfr.#: 08051C104KAT2A

    OMO.#: OMO-08051C104KAT2A-AVX

    		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 100volts .1uF 10%
    08055C103KAT2A

    Mfr.#: 08055C103KAT2A

    OMO.#: OMO-08055C103KAT2A-AVX

    		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 0805 0.01uF 50volts X7R 10%
    NK103C1R5

    Mfr.#: NK103C1R5

    OMO.#: OMO-NK103C1R5-AMPHENOL-ADVANCED-SENSORS

    		 THERMISTOR NTC 10KOHM 3977K BEAD
    可用性
    庫存:
    420
    訂購:
    2403
    輸入數量:
    FQP15P12的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格（美元）
    數量
    單價
    小計金額
    1
    US$1.25
    US$1.25
    10
    US$1.06
    US$10.60
    100
    US$0.82
    US$82.10
    500
    US$0.73
    US$363.00
    1000
    US$0.57
    US$573.00
    2000
    US$0.51
    US$1 016.00
    10000
    US$0.49
    US$4 890.00
    25000
    US$0.47
    US$11 825.00
    由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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