T2G6001528-SG

Mfr. #:: T2G6001528-SG
製造商:: Qorvo
描述:: RF JFET Transistors DC-6.0GHz 15 Watt 28V GaN
生命週期:: 製造商新產品
數據表:: T2G6001528-SG 數據表
交貨:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:: T2G6001528-SG 更多信息

產品屬性
屬性值

製造商：: 科沃

產品分類：: 射頻 JFET 晶體管

RoHS：: Y

晶體管類型：: HEMT

技術：: 氮化鎵碳化矽

獲得：: 15 dB

晶體管極性：: N通道

Vds - 漏源擊穿電壓：: 100 V

Id - 連續漏極電流：: 5 A

輸出功率：: 17 W

Pd - 功耗：: 28 W

安裝方式：: 貼片/貼片

打包：: 托盤

配置：: 單身的

工作頻率：: 6 GHz

系列：: T2G

品牌：: 科沃

濕氣敏感：: 是的

產品類別：: 射頻 JFET 晶體管

出廠包裝數量：: 100

子類別：: 晶體管

第 # 部分別名：: 1113256

Tags: T2G6001528-S, T2G6001, T2G6, T2G

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

T2G6001528-SG 描述

***W: RF Power Transistor, DC- 6 GHz, 15 W, 15 dB, 28 V, GaN

*** Services: CoC and 2-years warranty / RFQ for pricing

T2G6001528-SG 更多信息

T2G GaN HEMT Transistors: QorvoT2G GaN HEMT Transistors are 15W to 30W (P3dB) discrete GaN on SiC HEMT which operate from DC to 3.5GHz and 6.0GHz. These devices are constructed with Qorvo's proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.Learn More

QPD GaN RF Transistors: Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.

Market price

型號	製造商	描述	庫存	價格
T2G6001528-SG DISTI # 772-T2G6001528-SG	Qorvo	RF JFET Transistors DC-6.0GHz 15 Watt 28V GaN RoHS: Compliant	65	1:$105.7500 25:$95.4400
T2G6001528-SG-EVB DISTI # 772-T2G6001528SGEVB	Qorvo	RF Development Tools RoHS: Compliant	0	1:$875.0000

相關產品

圖片	型號	描述
	Mfr.#: HMC1119LP4ME OMO.#: OMO-HMC1119LP4ME	Attenuators 7-bit 0.1-6Ghz DATT
	Mfr.#: GRF5115 OMO.#: OMO-GRF5115	RF Amplifier .1-2.7GHz GaAs Gain 14.4dB
	Mfr.#: GRF2105 OMO.#: OMO-GRF2105	RF Amplifier .4-5GHz NF .77dB OP1dB 22.5dBm
	Mfr.#: ADRF6520ACPZ OMO.#: OMO-ADRF6520ACPZ	RF Amplifier E-Band/V-Band Baseband Prog Filters & VG
	Mfr.#: LTC5562IUC#TRMPBF OMO.#: OMO-LTC5562IUC-TRMPBF	RF Mixer LF-7GHz Low-Power, Wideband Active Mixer
	Mfr.#: SKY16601-555LF OMO.#: OMO-SKY16601-555LF	PIN Diodes .5-6.0GHz IL .1dB RL 27.5dB Pin 29dBm
	Mfr.#: CGHV40200PP OMO.#: OMO-CGHV40200PP	RF JFET Transistors GaN HEMT DC-2.5GHz, 180 Watt
	Mfr.#: TPS27S100BPWPR OMO.#: OMO-TPS27S100BPWPR	Power Switch ICs - Power Distribution PRODUCT SPIN OF TPS1H100B
	Mfr.#: ADP7158ACPZ-3.3-R7 OMO.#: OMO-ADP7158ACPZ-3-3-R7	LDO Voltage Regulators 3.3/5Vin 2A Ultra Low Noise LDO Fixed
	Mfr.#: TPS27S100BPWPR OMO.#: OMO-TPS27S100BPWPR-TEXAS-INSTRUMENTS	PRODUCT SPIN OF TPS1H100B