TH58BYG2S3HBAI6

Mfr. #:: TH58BYG2S3HBAI6
製造商:: Toshiba Memory
描述:: IC FLASH 4G PARALLEL 67VFBGA Benand
生命週期:: 製造商新產品
數據表:: TH58BYG2S3HBAI6 數據表
交貨:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:: TH58BYG2S3HBAI6 更多信息

產品屬性
屬性值

製造商: 東芝半導體和存儲

產品分類: 記憶

系列: 貝南德

打包: 托盤

包裝盒: 67-VFBGA

工作溫度: -40°C ~ 85°C (TA)

界面: 平行線

電壓供應: 1.7 V ~ 1.95 V

供應商-設備-包: 67-VFBGA (6.5x8)

內存大小: 4G (512M x 8)

內存型: EEPROM - NAND

速度: 25ns

格式化內存: EEPROM - 串行

Tags: TH58BYG2, TH58BY, TH58B, TH58, TH5

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

TH58BYG2S3HBAI6 描述

***et: 4GB SLC BENAND 24NM BGA 6.5X8 1.8V (EEPROM) 2K PAGE

***i-Key: IC FLASH 4G PARALLEL 67VFBGA

***ical: NAND Flash Memory

TH58BYG2S3HBAI6 更多信息

SLC NAND and BENAND: Toshiba SLC NAND and BENAND provide best-in-class endurance and data retention for sensitive or frequently used system data. Toshiba SLC are the optimal solution for long lasting products or systems working with extremely high data throughput between the host and the memory.

Market price

型號	製造商	描述	庫存	價格
TH58BYG2S3HBAI6 DISTI # V99:2348_13896577	Toshiba America Electronic Components	NAND Flash Memory	169	2500:$3.4650 1000:$3.6110 500:$4.0780 250:$4.4460 100:$4.8060 25:$5.2650 10:$5.7210 1:$6.2610
TH58BYG2S3HBAI6 DISTI # TH58BYG2S3HBAI6-ND	Toshiba Semiconductor and Storage Products	IC FLASH 4G PARALLEL 67VFBGA RoHS: Compliant Min Qty: 338 Container: Tray	Temporarily Out of Stock	338:$4.8951
TH58BYG2S3HBAI6 DISTI # TH58BYG2S3HBAI6	Toshiba America Electronic Components	4GB SLC BENAND 24NM BGA6.5X8 1.8V (EEPROM) 2K PAGE - Trays (Alt: TH58BYG2S3HBAI6) RoHS: Compliant Min Qty: 338 Container: Tray	Americas - 0	338:$4.5900 676:$4.5900 1352:$4.4900 2028:$4.3900 3380:$4.2900
TH58BYG2S3HBAI6 DISTI # 757-TH58BYG2S3HBAI6	Toshiba America Electronic Components	NAND Flash 1.8V 4Gb 24nm SLC NAND (EEPROM) RoHS: Compliant	0	338:$5.1100 676:$4.6500 1014:$4.0600

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	Mfr.#: TH58BYG2S3HBAI6 OMO.#: OMO-TH58BYG2S3HBAI6	NAND Flash 1.8V 4Gb 24nm SLC NAND (EEPROM)
	Mfr.#: TH58BYG2S3HBAI6 OMO.#: OMO-TH58BYG2S3HBAI6-TOSHIBA-MEMORY-AMERICA	IC FLASH 4G PARALLEL 67VFBGA Benand
	Mfr.#: TH58BYG3S0HBAI6 OMO.#: OMO-TH58BYG3S0HBAI6-TOSHIBA-MEMORY-AMERICA	8GB SLC NAND 24NM BGA 6.5X8 1.8V Benand
	Mfr.#: TH58BYG2S3HBAI4 OMO.#: OMO-TH58BYG2S3HBAI4-TOSHIBA-MEMORY-AMERICA	4G SLC NAND BGA 24NM Benand
	Mfr.#: TH58BYG3S0HBAI4 OMO.#: OMO-TH58BYG3S0HBAI4-1190	8GB SLC BENAND 24NM BGA 9X11 1.8
	Mfr.#: TH58BYG2S3HBAI4-ND OMO.#: OMO-TH58BYG2S3HBAI4-ND-1190	全新原裝
	Mfr.#: TH58BYG3S0HBAI6-ND OMO.#: OMO-TH58BYG3S0HBAI6-ND-1190	全新原裝